678 results about "Address generator" patented technology

A single instruction, multiple data (SIMD) processor including a plurality of addressing register sets, used to flexibly calculate effective operand source and destination memory addresses is disclosed. Two or more address generators calculate effective addresses using the register sets. Each register set includes a pointer register, and a scale register. An address generator forms effective addresses from a selected register set's pointer register and scale register; and an offset. For example, the effective memory address may be formed by multiplying the scale value by an offset value and summing the pointer and the scale value multiplied by the offset value.

A data processing apparatus communicates data bits on a predetermined number of sub-carrier signals of an Orthogonal Frequency Division Multiplexed (OFDM) symbol. The data processing apparatus comprises a parity interleaver operable to perform parity interleaving on Low Density Parity Check (LDPC) encoded data bits obtained by performing LDPC encoding according to a parity check matrix of an LDPC code including a parity matrix corresponding to parity bits of the LDPC code, the parity matrix having a stepwise structure, so that a parity bit of the LDPC encoded data bits is interleaved to a different parity bit position. A mapping unit maps the parity interleaved bits onto data symbols corresponding to modulation symbols of a modulation scheme of the OFDM sub-carrier signals. A symbol interleaver is arranged in operation to read-into a symbol interleaver memory the predetermined number of data symbols for mapping onto the OFDM sub-carrier signals, and to read-out of the interleaver memory the data symbols for the OFDM sub-carriers to effect the mapping, the read-out being in a different order than the read-in, the order being determined from a set of addresses, with the effect that the data symbols are interleaved on the sub-carrier signals. The set of addresses are generated by an address generator which has been optimised to interleave the data symbols on to the sub-carrier signals of the OFDM carrier signals for a given operating mode of the OFDM system, such as a 32K operating mode for DVB-T2 or DVB-C2.

A digital wavetable audio synthesizer is described. The synthesizer can generate up to 32 high-quality audio digital signals or voices, including delay-based effects, at either a 44.1 KHz sample rate or at sample rates compatible with a prior art wavetable synthesizer. The synthesizer includes an address generator which has several modes of addressing wavetable data. The address generator's addressing rate controls the pitch of the synthesizer's output signal. The synthesizer performs a 10-bit interpolation, using the wavetable data addressed by the address generator, to interpolate additional data samples. When the address generator loops through a block of data, the signal path interpolates between the data at the end and start addresses of the block of data to prevent discontinuities in the generated signal. A synthesizer volume generator, which has several modes of controlling the volume, adds envelope, right offset, left offset, and effects volume to the data. The data can be placed in one of sixteen fixed stereo pan positions, or left and right offsets can be programmed to place the data anywhere in the stereo field. The left and right offset values can also be programmed to control the overall volume. Zipper noise is prevented by controlling the volume increment. A synthesizer LFO generator can add LFO variation to: (i) the wavetable data addressing rate, for creating a vibrato effect; and (ii) a voice's volume, for creating a tremolo effect. Generated data to be output from the synthesizer is stored in left and right accumulators. However, when creating delay-based effects, data is stored in one of several effects accumulators. This data is then written to a wavetable. The difference between the wavetable write and read addresses for this data provides a delay for echo and reverb effects. LFO variations added to the read address create chorus and flange effects. The volume of the delay-based effects data can be attenuated to provide volume decay for an echo effect. After the delay-based effects processing, the data can be provided with left and right offset volume components which determine how much of the effect is heard and its stereo position. The data is then stored in the left and right accumulators.

In a method and an arrangement for controlling printing by a thermotransfer printing apparatus with relative movement between a thermotransfer print head and a print medium, a microprocessor that provides pixel energy data to a pixel energy memory by making an energy value calculation and by coding, and a print data controller prepares the pixel energy data by decoding during the printing in a number (corresponding to the pixel energy value) of binary pixel data each with the same binary value. The print data controller includes at least one pixel energy data preparation unit, a DMA controller, an address generator, a printer controller and a phase counter. The DMA controller allows an access to the pixel energy data stored in the pixel energy memory as code in order to provide the pixel energy data in print columns to the at least one pixel energy data preparation unit. The address generator generates addresses for selection of the buffered code during each phase of a number of phases. The phase counter supplies a phase count value to a phase data preparation unit in which the code value A and phase count value B are compared in order to generated binary pixel data, which are serially supplied from the output D to at least one shift register of the thermotransfer print head.

A low density One-Time Programmable (OTP) memory is disclosed to achieve low gate count and low overhead in the peripheral circuits to save the cost. A maximum-length Linear Feedback Shift Register (LFSR) can be used to generate 2n−1 address spaces from an n-bit address. The registers used in the address generator can have two latches. Each latch has two cross-coupled inverters with two outputs coupled to the drains of two MOS input devices, respectively. The inputs of the latch are coupled to the gates of the MOS input devices, respectively. The sources of the MOS input devices are coupled to the drains of at least one MOS device(s), whose gate(s) are coupled to a clock signal and whose source(s) are coupled to a supply voltage. The two latches can be constructed in serial with the outputs of the first latch coupled to the inputs of the second latch.

Address generation for interleaving in a wireless communication system includes at least one input generation module to generate at least one input signal. A first address generator module and a second address generator module generate a first output address for interleaving and a second output address for interleaving. A selector module selects an address for interleaving from the first and the second output address based on predetermined criteria. At least one input translation module is receives an input signal and translate the received input signal to generate a nominal input signal based on a value of the received input signal. An address generation module generates an address for interleaving based on the nominal input signal.

A semiconductor memory device includes a cell array including a plurality of cell regions, a row decoder configured to drive rows corresponding to cell regions in which a refresh operation is to be performed, based on a counting address, and a refresh address generator configured to generate the counting address and a modified address in response to a control signal, wherein the modified address is generated by inverting at least one bit of the counting address, and wherein the semiconductor memory device performs concurrent refresh operations on a first cell region corresponding to the counting address and a second cell region corresponding to the modified address where the second cell region is determined to have weak cells.

Method and device for generating an address value for addressing an interleaver memory. Consecutive address fragments to which a most significant bit(s) is to be appended are generated. Only a fraction of the address fragments generated, which potentially will exceed a maximum allowable value, is compared to the maximum allowable value. If the compared address fragment exceeds the maximum allowable value it is discarded. If the compared address fragment does not exceed the maximum allowable value it is accepted.

In a semiconductor integrated circuit device, a command decoder is adapted to receive not only an external command but also an internal command. An ECC controller has a command generator and an address generator. When the command decoder decodes an external entry command, the command generator instructs encoding to an ECC-CODEC circuit and the address generator sequentially produces addresses which are supplied to a memory array. The ECC-CODEC circuit produces check bits for error detection / correction with reference to information data of the memory array. Upon completion of an encoding operation of writing the check bits into a predetermined region of the memory array, the ECC controller delivers an end signal to the command decoder as the internal command to make a super self-refresh control circuit start a super self-refresh operation.

A scanning circuit for use with an active pixel sensor array comprises a row-address generator configured to start at a selected row-start address, stop at a selected row-stop address, and increment row addresses by a factor K. A column-address generator is configured to start at a selected column-start address, stop at a selected column stop address, and increment column addresses by a factor K. Circuitry is coupled to the row address generator and the column address generator, for storing the row-start address, the row-stop address, the column-start address, the column-stop address and the factor K. A row decoder is coupled to the row-address generator and a column selector is coupled to the column-address generator. A plurality of row select lines are coupled to the row decoder, each one of the row select lines associated with a different row in the active pixel sensor array. A plurality of column output lines are coupled to the column selector, each one of the column output lines associated with a different column in the active pixel sensor array.

A low density One-Time Programmable (OTP) memory is disclosed to achieve low gate count and low overhead in the peripheral circuits to save the cost. A maximum-length Linear Feedback Shift Register (LFSR) can be used to generate 2n−1 address spaces from an n-bit address. The registers used in the address generator can have two latches. Each latch has two cross-coupled inverters with two outputs coupled to the drains of two MOS input devices, respectively. The inputs of the latch are coupled to the gates of the MOS input devices, respectively. The sources of the MOS input devices are coupled to the drains of at least one MOS device(s), whose gate(s) are coupled to a clock signal and whose source(s) are coupled to a supply voltage. The two latches can be constructed in serial with the outputs of the first latch coupled to the inputs of the second latch.

A system and method for refreshing data in a dynamic random access memory (“DRAM”) is provided, where the system includes a data memory having a plurality of memory banks, a map memory in signal communication with the data memory for translating an internal address of each of the plurality of memory banks into a corresponding external address, a map comparator in signal communication with the map memory for selectively enabling a memory bank in accordance with its external address, a refresh address generator in signal communication with the map comparator for selectively refreshing the enabled memory bank in accordance with its external address, and a refresh counter in signal communication with the refresh address generator for signaling a refresh in accordance with the maximum required refresh time of the enabled memory bank; and where the corresponding method includes determining the maximum required refresh period for each of the memory banks, respectively, prioritizing the memory banks in accordance with their respective refresh periods, utilizing the memory banks in order of their respective prioritizations, selectively disabling at least one of the memory banks in reverse-order of their respective prioritizations, and refreshing only the remaining non-disabled memory banks.