The invention discloses a technical preparation method of an IBC battery, which comprises the steps of A, performing front texturing and back
polishing on an n-type original
silicon wafer, the front textured surface ranges between 1 micron and 10 microns in size, the
reflectivity of the textured surface is 9%-13%, and the back
polishing reflectivity is 30%-45%; B, forming a first doped region at the back, and then performing back selective partition to remove an
oxide layer; C, performing partition texturing and
etching by using KOH with the
mass ratio being 1%-3%, an additive with the
mass ratio being 3%-5% and an
etching solution with the temperature
ranging between 75 DEG C and 85 DEG C, wherein the
reflectivity of an etched area is 20%-28%; and then D, forming a second doped region at the back, forming FSF at the front, depositing a
passivation layer at the front and the back, and finally selectively forming
metal electrodes of a p-region and an n-region at the back. After adopting the method, in the back
metal printing process, the p-region and the n-region are distinguished by using the textured surface / polished surface to form surface state contrast, a
CCD camera has different spectral responses at different
surface states in
metal printing, and thus quick and accurate alignment of metal printing is achieved.