Technical preparation method of IBC battery
A process and battery technology, applied in the field of new energy photovoltaic crystalline silicon cells, can solve the problems that CCD cameras cannot clearly identify alignment marks, unfavorable fast, high-precision alignment, and difficulty in printing and identification.
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[0013] The preparation method of the IBC battery process of the present invention will be further described in detail below in combination with specific embodiments.
[0014] The IBC battery process preparation method of the present invention comprises the following steps:
[0015] A. On the n-type original silicon wafer, the front surface is textured and the back is polished. The size of the front surface is 1um-10um, the reflection rate of the surface is 9%-13%, and the reflection rate of the backside is 30%-45%;
[0016] B. Form the first doped region on the back side, and then perform selective partitioning and removal of the oxide layer on the back side;
[0017] C. Using the mass ratio of alkali as 1.5%, the mass ratio of additives as 2%, and the temperature as 80°C in the corrosive solution for partitioned texturing corrosion, the reflectivity of the corrosion area is 20%-28%;
[0018] D. Then form the second doped region on the back; form FSF on the front; deposit pas...
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