The invention discloses a method for conducting amorphous TiO2 pulsed chemical
vapor phase deposition on TiO2 particle surfaces. By covering
titanium dioxide with
inert materials of SiO2, Al2O3 and the like, the photocatalytic activity of
titanium dioxide can be effectively inhibited, in current industrial application, normally, the surface of TiO2 is covered through a
liquid phase deposition technology, however, according to a
liquid phase covering method, the thickness and the evenness of thin film cannot be controlled precisely. A
vapor phase atom
titanium dioxide film covering method is provided before, wherein a layer of SiO2 thin film with the thickness of 3 nm is deposited on TiO2 particle surfaces; however, excessive SiO2 covering can cause decline of the lightening power of TiO2 due to the fact that a
refractive index (1.46) of SiO2 is lower than that (2.55) of
anatase TiO2. The invention provides a pulsed chemical
vapor phase deposition method, wherein TiCl4 is used as a Ti precursor, at the normal temperature, TiCl4 is reacted with surface hydroxyl of TiO2 to form an amorphous TiO2 thin film with even thickness of 3 nm; the photocatalytic activity of
titanium dioxide covered with the amorphous TiO2 is effectively inhibited, and compared with a sample covered with SiO2, the lightening power of the
titanium dioxide covered with the amorphous TiO2 is obviously enhanced.