82results about How to "Good solder wettability" patented technology

A soldering iron (and a desoldering iron) with a replaceable tip, which is releasably securable on the forward heat-conducting end of a soldering (or desoldering) iron heat assembly. The tip has a tapered heat conducting core in a tip cap. The face of the core can have a depression for mating engagement with a protrusion of the heat-conducting end. Also, the face can lie in the rear plane of the tip cap. An assembly which allows for the easy removal and application of a replacement tip can include a sleeve with tightening bolt, a coil spring sleeve, or a slotted compressible sleeve. The tip can thus be replaced after it has worn out, and the heat assembly unit need not be replaced until it has burnt out. Methods of manufacturing and using the tip are also disclosed.

In a monolithic electronic component in which a resistive element is incorporated by forming a resistor film on a terminal electrode, a plating film can be formed on the terminal electrode having the resistor film via electroplating in an efficient manner and with a uniform film thickness. In order to form the terminal electrode, the resistor film is disposed directly on the surface of the component body, and a conductive resin film having a relatively low volume resistivity is disposed over the resistor film. The conductive resin film is preferably adapted to have a specific resistance of less than about 1×10−4 Ω·m, on which a plating film having a uniform film thickness can be formed efficiently via electroplating.

It provides metal-powder-contained flux disposed between bumps and circuit electrodes when electronic parts are mounted by soldering, the metal powder comprises a core metal formed of metal such as tin and zinc and a surface metal covering surfaces of the core metal formed of noble metal such as gold and silver. Accordingly, metal powder will not remain as residue that is liable to cause migration after the reflow process, and it is possible to assure both soldering effect and insulation effect.

A soldering iron (and a desoldering iron) with a replaceable tip cap are herein disclosed. The replaceable tip cap is fitted on the forward heat-conducting core end of a soldering (or desoldering) iron heat assembly. Conductive paste, powder or a low melting temperature material such as solder, can be sandwiched between the tip cap and the forward end to improve heat conductivity therebetween. An assembly which allows for the easy removal and application of a replacement tip cap can include a sleeve with tightening bolt, a coil spring sleeve, or a slotted compressible sleeve. The tip cap can thus be replaced after it has worn out, and the heat assembly unit need not be replaced until it has burnt out.

This invention provides an Ag electrode paste for light receiving face-side electrode formation, which can provide a solar battery cell with a high conversion efficiency and provided with a light receiving face-side electrode having low line resistance, and a solar battery cell having good characteristics producing using the Ag electrode paste, and a process for producing the solar battery cell. The Ag electrode paste for use in the formation of a light receiving face-side electrode (10) comprises (a) Ag particles, (b) an organic vehicle, and (c) a lead-free glass frit comprising SiO2: 13 to 17% by weight, B2O3; 0 to 6% by weight, Bi2O3: 65 to 75% by weight, Al2O3: 5% by weight, TiO2: 1 to 3% by weight, and CuO: 0.5 to 2% by weight. The Ag electrode paste is used in the formation of a second electrode in a light receiving face-side electrode (10) comprising a first electrode (11) and a second electrode (12) provided on the first electrode.

Provided is a semiconductor device having an element covered with a resin mold and a metal lead protruding from the resin mold in which a lead-tip portion thereof is entirely covered by solder plating and in which a lead-tip end surface, which is not covered by solder plating, has an area less than half of a cross-sectional area of the metal lead, whereby solder wettability of the metal lead is improved and a bonding strength to a circuit board is also improved.

In a monolithic electronic component in which a resistive element is incorporated by forming a resistor film on a terminal electrode, a plating film can be formed on the terminal electrode having the resistor film via electroplating in an efficient manner and with a uniform film thickness. In order to form the terminal electrode, the resistor film is disposed directly on the surface of the component body, and a conductive resin film having a relatively low volume resistivity is disposed over the resistor film. The conductive resin film is preferably adapted to have a specific resistance of less than about 1×10−4 Ω·m, on which a plating film having a uniform film thickness can be formed efficiently via electroplating.

Tin-plated copper-alloy terminal material in which Sn-based surface layer is formed on a surface of a substrate made of Cu alloy, and a Cu—Sn alloy layer is formed between the Sn-based surface layer and the substrate; the Cu—Sn alloy layer contains Cu6Sn5 as major proportion and has a compound in which a part of Cu in the Cu6Sn5 is substituted by Ni and Si in the vicinity of a boundary face at the substrate side; an arithmetic average roughness Ra of the Cu—Sn alloy layer is 0.3 μm or more in at least one direction and an arithmetic average roughness Ra in all direction is 1.0 μm or less; an oil-sump depth Rvk of the Cu—Sn alloy layer is 0.5 μm or more; and an average thickness of the Sn-based surface layer is 0.4 μm or more and 1.0 μm or less and dynamic friction coefficient is 0.3 or less.

A method for plating electrodes of ceramic chip electronic components includes performing electroplating in a plating bath. The plating bath contains tin (II) sulfamate, acting as a tin (II) salt; a complexing agent including at least one selected from the group consisting of citric acid, gluconic acid, pyrophosphoric acid, heptoic acid, malonic acid, malic acid, salts of these acids, and gluconic lactone; and a brightener including at least one surfactant having an HLB value of about 10 or more. The tin plating adhesion of the resulting ceramic chip electronic components can be limited to a certain level.

To provide a silver-bismuth powder, which includes: silver; and bismuth, wherein a mass ratio (silver:bismuth) of the silver to the bismuth is 95:5 to 40:60, wherein a cumulative 50% point of particle diameter (D50) of the silver-bismuth powder in a volume-based particle size distribution thereof as measured by a laser diffraction particle size distribution analysis is 0.1 μm to 10 μm, and wherein an oxygen content of the silver-bismuth powder is 5.5% by mass or less.

The invention provides a tin-plated copper-alloy material for terminal and a method for producing the same with an excellent insertion / extraction performance and has an object of reducing dynamic friction coefficient to 0.3 or less with an excellent electrical-connection characteristic. A Cusn alloy layer / a NiSn alloy layer / a Ni or Ni alloy layer are formed between a Sn-based surface layer and a substrate made of Cu or Cu alloy; the Cusn alloy layer is a compound-alloy layer containing Cu 6 Sn 5 as a major proportion and a part of Cu in the Cu 6 Sn 5 is displaced by Ni; the Nisn alloy layer is a compound-alloy layer containing Ni 3 Sn 4 as a major proportion and a part of Ni in the Ni 3 Sn 4 is displaced by Cu; an average interval S of point peaks of the Cusn alloy layer is not less than 0.8 [mu]m and not more than 2.0 [mu]m; an average thickness of the Sn-based surface layer is not less than 0.2 [mu]m and not more than 0.6 [mu]m; an exposed-area rate of the CuSn alloy layer exposed at a surface of the Sn-based surface layer is not less than 1% and not more than 40%; an average of equivalent-circle diameter of the exposed portions of the Cusn alloy layer exposed at the surface of the Sn-based surface layer is not less than 0.1 [mu]m and not more than 1.5 [mu]m; and dynamic friction coefficient is not more than 0.3.

To provide tin-plated copper-alloy material for terminal having an excellent insertion / extraction performance by reducing dynamic friction coefficient to 0.3 or less with bringing out an excellent electrical-connection characteristic. Tin-plated copper-alloy terminal material in which an Sn-based surface layer is formed on a surface of a substrate made of Cu alloy, and a Cu-Sn alloy layer is formed between the Sn-based surface layer and the substrate; the Cu-Sn alloy layer contains Cu 6 Sn 5 as a major proportion and has a compound in which a part of Cu in the Cu 6 Sn 5 is substituted by Ni and Si in the vicinity of a boundary face at the substrate side; an arithmetic average roughness Ra of the Cu-Sn alloy layer is 0.3 [mu]m or more in at least one direction and an arithmetic average roughness Ra in all direction is 1.0 [mu]m or less; an oil-sump depth Rvk of the Cu-Sn alloy layer is 0.5 [mu]m or more; and an average thickness of the Sn-based surface layer is 0.4 [mu]m or more and 1.0 [mu]m or less and dynamic friction coefficient is 0.3 or less.

Tin-plated copper-alloy material for terminal in which: a Sn-based surface layer is formed on a surface of a substrate made of Cu alloy, and a Cu—Sn alloy layer is formed between the Sn-based surface layer and the substrate; the Cu—Sn alloy layer is an alloy layer containing Cu6Sn5 as a major proportion and having a compound in which a part of Cu in the Cu6Sn5 is substituted by Ni and Si in the vicinity of a boundary face at the substrate side; an average thickness of the Sn-based surface layer is 0.2 μm or more and 0.6 μm or less; an oil-sump depth Rvk of the Cu—Sn alloy layer is 0.2 μm or more; an area rate of the Cu—Sn alloy layer exposed at a surface of the Sn-based surface layer is 10% or more and 40% or less; and dynamic friction coefficient is 0.3 or less.

Tin-plated copper-alloy material for terminal having: a substrate made of Cu or Cu alloy; an Sn-based surface layer formed on a surface of the substrate; and a Cu—Ni—Sn alloy layer including Ni formed between the Sn-based surface layer and the substrate, in which the Cu—Ni—Sn alloy layer is made of: fine Cu—Ni—Sn alloy particles; and coarse Cu—Ni—Sn alloy particles, an average thickness of the Sn-based surface layer is not less than 0.2 μm and not more than 0.6 μm, an area ratio of the Cu—Ni—Sn alloy layer exposed at a surface of the Sn-based surface layer is not less than 10% and not more than 40%, and a coefficient of kinetic friction of the tin-plated copper-alloy material for terminal is not more than 0.3.

A semiconductor device (1, 1A, 21, 31, 41, 51) provided with a first semiconductor chip (3) having a first functional surface (3F) formed with a first functional element (3a), a protective resin layer (12) provided on the first functional surface, and an external connection terminal (10, 19, 52) provided on a peripheral portion of the first functional surface for external electrical connection, the external connection terminal having a bottom surface (10B, 19BB) exposed from a bottom surface (12B) of the protective resin layer facing away from the first functional surface and a side surface (10S, 19BS) exposed from a side surface (12S) of the protective resin layer.

A wiring board to be used with being mounted on a packaging board includes a chip component surface-mounted on a surface facing the packaging board. The chip component includes terminal electrodes at both end portions of the component body thereof. Each of the terminal electrodes is provided in a form in which a plated film (Sn) formed on the surface of the terminal electrode is separated into two portions, one portion being on the wiring board side, and another portion being on the packaging board side. In one aspect, each of the terminal electrodes of the chip component is separated into a portion on the wiring board side and a portion on the packaging board side, and the plated film (Sn) is formed on a surface of each of the separated portions of each of the terminal electrodes.