107results about How to "Excellent mechanical and thermal properties" patented technology

The invention is based on the discovery that compositions containing certain maleimide compounds and aromatic diene compounds are useful as thermosetting resins for the electronic packaging industry. The invention compositions described herein can be cured in a variety of ways, with or without a catalyst. In some embodiments, the well-known “ene” reaction can be used to cure the compositions described herein, and therefore no catalyst is required.

Aligned carbon nanotubes and composites for electrical interconnect and thermal interface materials are provided. In one preferred embodiment, an aligned carbon nanotube device comprises a substrate and a plurality of carbon nanotubes having a substantially vertical profile. The substantially vertical carbon nanotubes are coupled to the substrate. In another preferred embodiment, a carbon nanotube production method comprises depositing a catalyst on a substrate and flowing at least one of argon, hydrogen, and ethylene over the catalyst for a predetermined time at a predetermined temperature to produce a carbon nanotube. This production method enables production of high purity carbon nanotubes and also enables precise placement of carbon nanotubes on a substrate. Other embodiments are also claimed and described.

An injection molded preform for making a stretch blow molded container having an overall stretch ratio of from about 12 to about 16, wherein the overall stretch ratio is a product of a hoop stretch ratio and an axial stretch ratio, wherein the hoop stretch ratio is from about 5.6 to about 6.5, wherein the axial stretch ratio is from about 2.4 to about 2.7, and wherein the preform comprises a CG PET Copolymer having a free blow volume of from about 650 to about 800 ml measured at 100° C. and 90 psi using a 25 gram weight preform designed for a 500 ml container with a maximum diameter of 65 mm and a height of 200 mm from below the container finish and having a hoop stretch ratio of 5.5 and an axial stretch ratio of 2.6. This invention also relates to a method of making such preforms and stretch blow molded containers and methods of making the same.

Disclosed herein is a polyamide-imide copolymer film, comprising a copolymer resin in which a unit structure derived from TFDB (2,2′-bistrifluoromethyl-4,4′-biphenyl diamine), a unit structure derived from 6FDA (4,4′-(hexa-fluoroisopropylidene)diphthalic anhydride), a unit structure derived from BPDA (3,3′,4,4′-biphenyltetracarboxylic dianhydride) and a unit structure derived from TPC (terephthaloyl chloride or 1,4-benzenedicarbonyl chloride) are copolymerized, wherein the copolymer resin has a weight average molecular weight of 10,000˜400,000.

A flip-chip substrate is disclosed, which comprises a core substrate including an aluminum oxide substrate and a first circuit layer, wherein the aluminum oxide substrate has a top surface, a bottom surface, and a plurality of conductive through holes, the conductive through holes connect the top surface and the bottom surface the first circuit layer disposed on the top surface and the bottom surface and electrically connects to the conductive through holes; and a built-up structure disposed on the top surface and the bottom surface and electrically connecting to the first circuit layer. Moreover, the conductive through holes are formed by forming plural through holes through electrolyzing, and then forming a first seed layer and a first metal layer inside the through holes. Therefore, the problem of substrate warpage can be prevented, and the wiring density of the flip-chip substrate can be improved.

A thin film comprising a composition obtained by polymerizing a monomer having the formula I:

wherein:

• • R₁ is a hydrolysable group,
  • R₂ is a polarizability reducing organic group, and
  • R₃ is a bridging hydrocarbon group, to form a siloxane material. The invention also concerns methods for producing the thin films. The thin film can be used a low k dielectric in integrated circuit devices. The novel dielectric materials have excellent properties of planarization resulting in good local and global planarity on top a semiconductor substrate topography, which reduces or eliminates the need for chemical mechanical planarization after dielectric and oxide liner deposition.

An organic-inorganic composition, which has a backbone containing —Si—O— units with chromophore groups attached directly to at least a part of the silicon atoms. The film forming composition and resulting coating properties can be tailored to suit the specific exposure wavelength and device fabrication and design requirements. By using two different chromophores the refractive index and the absorption co-efficient can be efficiently tuned and a desired Si-content of the anti-reflective coating composition can be obtained—a high Si-content will give good mechanical and thermal properties and also the required wet etch and dry etch properties.

Disclosed herein are solvent free, dry coating processes for applying a layered material such as graphene, nanoplate graphite, etc., to a substrate. The applied layered material is devoid of any dispersant and substantially uniform in thickness. Generally, a layered material precursor composition is mixed with a milling medium so that the milling medium is coated with the layered material. The substrate is then contacted with the coated milling medium. The layered material on the milling medium transfers to the substrate to form a coating on the substrate. Such processes may be especially useful for applying conductive films onto a polymeric substrate without the need for additives such as a surfactant or a polymeric binder.

The present invention refers to a polyamide moulding composition having an excellent adhesion to metal surfaces. Moreover, the present invention refers to structural parts with a metal component directly bonded to a thermoplastic component (interconnected without using a bonding agent/layer). The present invention also relates to a method for manufacturing of such structural parts by an injection moulding or extrusion processes.

The present invention provides a polyimide precursor composition comprising a polyimide precursor and a thermal base generator having the structure of formula (1):

wherein R₁, R₂, R₃, R₄, R₅ and Y^⊖ are as defined in the specification.

The present invention also provides a polyimide prepared from the aforementioned precursor composition, and a preparation method thereof.

Method for forming a low dielectric constant structure on a semiconductor substrate by CVD processing. The method comprises using a precursor containing chemical compound having the formula of (R1—R2)n-Si—(X1)4-n, wherein X1 is hydrogen, halogen, acyloxy, alkoxy or OH group, R2 is an optional group and comprises an aromatic group having 6 carbon atoms and R1 is a substituent at position 4 of R2 selected from an alkyl group having from 1 to 4 carbon atoms, an alkenyl group having from 2 to 5 carbon atoms, an alkynyl group having from 2 to 5 carbon atoms, Cl or F; n is an integer 1-3. The present precursors allow for a lowering of the electronic dielectric constant compared to conventional dielectric materials, such as silicon dioxide or phenyl modified organo-containing silicon dioxide.

A silicon polymer material, which has a silicon polymer backbone with chromophore groups attached directly to at least a part of the silicon atoms, the polymer further exhibiting carbosilane bonds. The film forming composition and resulting coating properties can be tailored to suit the specific exposure wavelength and device fabrication and design requirements. By using two different chromophores the refractive index and the absorption co-efficient can be efficiently tuned. By varying the proportion of carbosilane bonds, and a desired Si-content of the anti-reflective coating composition can be obtained.

The invention concerns a rocket engine wherein the combustion chamber includes at least one first monolithic component made of a thermostructural composite material comprising a porous wall through which the fuel is introduced in the core of the combustion chamber. A small part of the fuel is directed towards the neck for it to be cooled.

The invention relates to a method of preparing wholly aromatic polyester including: mixing monomers, introducing the mixed monomers into a reactor having a rectangular or trapezoidal plate type stirring impeller, and polymerizing the introduced monomers through esterification with a power per unit volume of 10˜60 kW/m³, a length (L) to diameter (D) ratio of the stirring impeller is 1˜3:1, and a distance between the bottom of the reactor and a lower portion of the stirring impeller is 1/100˜ 1/15 times of the diameter (D); b) pulverizing the obtained polymer; and c) solid state polymerizing the pulverized polymer. The present invention also relates to a method of preparing wholly aromatic polyester having excellent heat resistant properties in which byproduct is effectively discharged by controlling a heating rate and reaction holding time between the weight loss initiating temperature and the melting point of a low molecular weight polymer generated in a melt polymerization in a solid state polymerization, adhesion does not occur, and discoloration due to heating does not occur.

A low dielectric constant polymer, comprising monomeric units derived from a compound having the general formula I (R¹—R²)_n—Si—(X¹)_4-n, wherein each X¹ is independently selected from hydrogen and inorganic leaving groups, R² is an optional group and comprises an alkylene having 1 to 6 carbon atoms or an arylene, R¹ is a polycycloalkyl group and n is an integer 1 to 3. The polymer has excellent electrical and mechanical properties.

Disclosed herein are substrates which have been dry coated with a layered material. Generally, a layered material precursor composition is mixed with a milling medium so that the milling medium is coated with the layered material. The substrate is then contacted with the coated milling medium. The layered material on the milling medium transfers to the substrate to form a coating on the substrate. In particular, conductive films can be formed on a substrate without the need for additives such as a surfactant or a polymeric binder.