31results about How to "Excellent etch profile" patented technology

A method for plasma processing a high-k layer includes providing a substrate having a high-k layer formed thereon, on a substrate holder in a process chamber, and creating a plasma in the process chamber to thereby expose the high-k layer to the plasma. RF power is applied to the substrate holder, the RF power having a characteristic to reduce a rate of formation of an oxide interface layer located between the substrate and the high-k layer. A device includes a feature etched in a high-k layer. The etch profile of the device can include a reduced bird's beak, and a surface of the substrate in an etched region can be substantially coplanar with a substrate under a non-etched area.

The invention relates to an etchant composition, and a method for manufacturing an array substrate for a display device, and an array substrate and a display device. More specifically, the invention provides an etchant composition of a metal film uniformly etching the metal film, having the excellent etching speed and an excellent taper angle characteristic, and having an excellent etching profileof an interface unit in a case of etching of a multilayer when manufacturing an array substrate for a display device, a method for manufacturing an array substrate for a display device and an array for a display device. The etchant composition of the metal film is characterized by containing, with respect to the total weight of the composition, 5 to 25 wt% of hydrogen peroxide, 0.01 to 1 wt% of afluorine compound, 0.1 to 5 wt% of an azole compound, 0.1 to 5 wt% of a water-soluble compound having a nitrogen atom and a carboxyl group in one molecule is by weight, 0.001 to 5 wt% of a phosphatecontaining alkali metal or alkaline earth metal, 0.01 to 5 wt% of a polyol-type surfactant, 0.1 to 5 wt% of sulfate comprising alkali metal or alkaline earth metal, and the balance of water, the weight ratio of phosphate to sulfate being 1:3 to 1:20.

An etching method of silicon-containing oxide film is provided. The etching method includes a first step of forming an etching pattern on the silicon-containing oxide film by etching the silicon-containing oxide film using a first plasma generated from a first gas supplied to the processing vessel, according to a pattern of a mask layered on the silicon-containing oxide film, and a second step of removing a reaction product adhering to vicinity of an opening of the etching pattern and to the mask using a second plasma generated from a second gas supplied to the processing vessel, by applying a first high frequency electric power for generating plasma and a second high frequency electric power for generating bias voltage.