31results about How to "Excellent etch profile" patented technology

A method for plasma processing a high-k layer includes providing a substrate having a high-k layer formed thereon, on a substrate holder in a process chamber, and creating a plasma in the process chamber to thereby expose the high-k layer to the plasma. RF power is applied to the substrate holder, the RF power having a characteristic to reduce a rate of formation of an oxide interface layer located between the substrate and the high-k layer. A device includes a feature etched in a high-k layer. The etch profile of the device can include a reduced bird's beak, and a surface of the substrate in an etched region can be substantially coplanar with a substrate under a non-etched area.

The invention relates to an etchant composition, and a method for manufacturing an array substrate for a display device, and an array substrate and a display device. More specifically, the invention provides an etchant composition of a metal film uniformly etching the metal film, having the excellent etching speed and an excellent taper angle characteristic, and having an excellent etching profileof an interface unit in a case of etching of a multilayer when manufacturing an array substrate for a display device, a method for manufacturing an array substrate for a display device and an array for a display device. The etchant composition of the metal film is characterized by containing, with respect to the total weight of the composition, 5 to 25 wt% of hydrogen peroxide, 0.01 to 1 wt% of afluorine compound, 0.1 to 5 wt% of an azole compound, 0.1 to 5 wt% of a water-soluble compound having a nitrogen atom and a carboxyl group in one molecule is by weight, 0.001 to 5 wt% of a phosphatecontaining alkali metal or alkaline earth metal, 0.01 to 5 wt% of a polyol-type surfactant, 0.1 to 5 wt% of sulfate comprising alkali metal or alkaline earth metal, and the balance of water, the weight ratio of phosphate to sulfate being 1:3 to 1:20.

An etching method of silicon-containing oxide film is provided. The etching method includes a first step of forming an etching pattern on the silicon-containing oxide film by etching the silicon-containing oxide film using a first plasma generated from a first gas supplied to the processing vessel, according to a pattern of a mask layered on the silicon-containing oxide film, and a second step of removing a reaction product adhering to vicinity of an opening of the etching pattern and to the mask using a second plasma generated from a second gas supplied to the processing vessel, by applying a first high frequency electric power for generating plasma and a second high frequency electric power for generating bias voltage.

The present invention relates to a copper-based metal film etching liquid composition which includes (A) 5 to 30 weight percent of hydrogen peroxide (H2O2), (B) fluorine compound 0.01 to 3% by weight, (C) 0.01 to 3% by weight of 5- (alkyl of 1 to 5 carbon atoms) -1H-tetrazole, (D) 0.5 to 5% by weight of a water-soluble compound having a nitrogen atom and a carboxyl group in one molecule, (E) 0.05 to 1% by weight of sulfate compound, (F) 1 to 5% by weight of polyhydric alcohol type surfactant, and (G) a residual amount of water with regard to the total weight of the composition, a method of manufacturing an array substrate for a display device using an etchant composition and an etching method. It is possible to provide a metal film etching liquid composition which can prevent step coverage failure and the incidence of etch residues.

The invention discloses an etchant composition for a copper-based metal layer comprising a predetermined amount of hydrogen peroxide, an azole compound, a water-soluble compound having a nitrogen atom and a carboxyl group in the molecule, a phosphate, an acetate, a polyol surfactant And water. There is also provided a method of manufacturing an array substrate for a display device using the etchant composition.

The invention provides an etchant composition for integrated circuits, belonging to the field of etching technology, comprising, based on the total weight of the etchant composition, 3-10wt% of nitric acid; 9-16wt% of hydrochloric acid; 0.01-1wt% jelly jelly; and the remainder of water. The etching method using the above etchant composition comprises the steps of: forming a metal oxide layer on a substrate; selectively leaving a photoreactive material on the metal oxide layer to expose a part of the metal oxide layer; and using an etching The agent composition etches the exposed metal oxide layer. The etchant composition of the present invention has the advantages of controllable etching rate, good etching effect, precise thickness etching and no etching residue, better etching uniformity and stability, can provide excellent etching profile, and exhibits excellent Good etching performance, the metal electrode structure is not easy to be damaged, and it is not easy to leave residues that cause electrical short circuits.

The invention discloses an etchant composition for a metallic oxide layer. The etchant composition for the metallic oxide layer includes nitric acid, hydrochloric acid, organic acid and water. The composition can rapidly and uniformly etch the metallic oxide layer (transparent oxide semiconductor), and is simple in preparation and easy to control.