Etchant compositions for integrated circuits

Abstract

The invention provides an etchant composition for integrated circuits, belonging to the field of etching technology, comprising, based on the total weight of the etchant composition, 3-10wt% of nitric acid; 9-16wt% of hydrochloric acid; 0.01-1wt% jelly jelly; and the remainder of water. The etching method using the above etchant composition comprises the steps of: forming a metal oxide layer on a substrate; selectively leaving a photoreactive material on the metal oxide layer to expose a part of the metal oxide layer; and using an etching The agent composition etches the exposed metal oxide layer. The etchant composition of the present invention has the advantages of controllable etching rate, good etching effect, precise thickness etching and no etching residue, better etching uniformity and stability, can provide excellent etching profile, and exhibits excellent Good etching performance, the metal electrode structure is not easy to be damaged, and it is not easy to leave residues that cause electrical short circuits.

Description

technical field [0001] The invention belongs to the technical field of etching, in particular to an etchant composition for integrated circuits. Background technique [0002] Since the end of the last century, integrated circuit technology has developed rapidly, and the integration level of integrated circuits has increased rapidly. It can double in one and a half years, and it almost obeys Moore's Law. One of the miracles of the twentieth century is the creation of powerful and fast semiconductor integrated circuits of our time. A thin film transistor (TFT) for integrated circuits is a field effect transistor, which is composed of different types of thin films such as semiconductor active layer, insulating layer and metal electrode. According to the type of semiconductor active layer material, TFT is mainly divided into amorphous silicon (a-Si:H) TFT, low temperature polysilicon (LTPS) TFT, organic TFT and oxide TFT, among which the mobility of oxide TFT is higher, which i...

AI Technical Summary

Problems solved by technology

For example, the problem of lateral etching in wet etching of zinc oxide-based thin films has always been a bottleneck for the popularization and application of Al, Ga, Zn, and In-based oxide thin films.

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