40results about How to "Excellent etching properties" patented technology

A pixel electrode employs a transparent electrode made from indium-zinc-oxide (IZO) that is capable of preventing damage and bending thereof. In a liquid crystal display device containing pixel electrodes, the transparent electrode is made from indium-zinc-oxide (IZO) having an amorphous structure so that it can be etched within a short period of time with a low concentration of etchant. Accordingly, it is possible to prevent damage and bending of the transparent electrode upon the patterning thereof.

The invention discloses an etchant composition used for copper layers and titanium layers and a method for manufacturing an array substrate of a liquid crystal display using the etchant composition. The etchant composition comprises 0.5 wt.% to 20 wt.% of persulfate, 0.01 wt.% to 2 wt.% of a fluorine compound, 1 wt.% to 10 wt.% of inorganic acid (salt), 5 wt.% to 20 wt.% of organic acid (salt), 0.1 wt.% to 5 wt.% of a cyclamine compound containing alkyl (containing 1 to 5 carbon atoms) tetrazole, 0.1 wt.% to 10 wt.% of a sulfonic acid compound and the balance of water. Thus, the copper layers and the titanium layers can be evenly etched in batches at a high etching speed, and even when the number of treated sheets is increased, the inclination angles of etched patterns are reduced.

A method for manufacturing an aluminum material used for an electrode of an electrolytic capacitor of the present invention, comprising the steps of heating the aluminum material in an oxidizing atmosphere, removing a surface layer of the aluminum material by washing the heated aluminum material, and treating the aluminum material obtained by washing Perform final annealing.

Disclosed is a Cu alloy film for a display device that has high adhesion to a glass substrate while maintaining low electric resistance characteristic of Cu-based materials. The Cu alloy film is wiring in direct contact with a glass substrate on a board and contains 0.1 to 10.0 atomic% in total of one or more elements selected from the group consisting of Ti, Al, and Mg. Also disclosed is a display device comprising a thin-film transistor that comprises the Cu alloy film. In a preferred embodiment of the display device, the thin-film transistor has a bottom gate-type structure, and a gate electrode and scanning lines in the thin-film transistor comprise the Cu alloy film and are in direct contact with the glass substrate.

An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition.

The invention relates to an etching liquid composition which is used for controlling lateral erosion of a molybdenum film or a molybdenum alloy film to realize stable etching processes when a copper-and-molybdenum-containing film is etched. The etching liquid composition can improve etching characteristics such as an etching taper angle, etching deviation, etching straightness and the like. The etching liquid composition comprises 10 to 30 weight% of a hydrogen peroxide, 0.1 to 5 weight% of an etching inhibitor, 0.1 to 5 weight% of a chelating agent, 0.1 to 5 weight% of an etching additive, 0.01 to 2 weight% of fluoride and 0.01 to 2 weight% of lateral erosion inhibitor; the total weight is enabled to be 100 weight% of water.

The present invention provides an antireflective coating composition. Theantireflective coating composition can strongly absorb radiation of 100-300 nm by using the extinction resin of the present invention, particularly has high light absorption performance at 248 nm, and has an extinction coefficient K of 0.4 or more or 0.5 or more, thereby allowing the use of a thinner coating layer and a shorter etching time, and the prepared antireflective coating material is easy to remove, and is particularly suitable for being used in thin-layer photoresist to obtain a high-resolution photoetching pattern; meanwhile, the BARC layer provided by the invention also has an improved plasma etching rate relative to a photoresist material, so that an image can be completely transferred to a substrate to obtain a good photoresist image. Further, through the interaction of the solid components, the interference effect in the photoresist can be eliminated; and through the combined action of a catalyst, a crosslinking agent and extinction resin, the antireflection coating composition with good storage stability and high differential solubility after curing is obtained.

An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.

The present invention relates to an etchant composition for etching a triple film consisting of an indium-based metal film, an aluminum-lanthanum-based alloy film, and a titanium-based metal film, wherein the etchant composition comprises: 1 to 15 wt % of hydrogen peroxide; 0.1 to 10 wt % of inorganic acid; and 0.01 to 5 wt % of a fluorine compound, with the remainder being water.

The invention provides a two-layer flexible substrate free of surface defects and having excellent etching characteristics and adherence to a resist.The two-layer flexible substrate has a copper layer provided on one or both faces of an insulator film without using an adhesive, wherein the surface roughness (Ra) of the copper layer is 0.10 to 0.25 μm, and wherein the average crystal grain size [of copper] is no greater than 0.8 μm at 1 μm from the insulator film in the cross-section of the copper layer. Preferably, the insulator film is a polyimide film.

The present invention relates to an etchant composition for the formation of a metal line. The etchant composition can wet-etch, in a batch, a single-layer film formed of one or more metals selected from a group consisting of titanium, titanium alloy, aluminum, and an aluminum alloy, or a multilayer film including a double-layer film, thus simplifying the etching process and improving productivity. Further, the etchant composition of the present invention has a high etching rate, prevents damage to a lower film and equipment, enables uniform etching, provides excellent etching characteristics, eliminates the need for expensive equipment, is advantageous when used for large display devices, and provides remarkable economical advantages.

An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition.

The present invention relates to a silver etchant composition, an etching method utilizing it and a method for forming a metal pattern. The silver etchant composition contains 30 to 70% by weight of phosphoric acid, 2 to 9% by weight relative to the total weight of the composition. % nitric acid, 0.1 to 9% by weight of an acetate compound, 0.1 to 10% by weight of ferric nitrate and the balance of water making the total weight of the composition 100% by weight.

A method for manufacturing an aluminum material for electrolytic capacitor electrodes of the present invention, comprising the steps of heating an aluminum material in an oxidative atmosphere, removing the surface layer of the aluminum material by washing the heated aluminum material and subjecting the washed aluminum material obtained by washing to final annealing.

The present invention relates to a metal film etching solution composition and a method for forming a conductive pattern using the same. More specifically, it relates to the following metal film etching solution composition. The total weight of the composition includes: 40-60% by weight of phosphoric acid; 3-8% by weight of nitric acid; 5-20% by weight of acetic acid; 0.1-3% by weight of phosphate; 0.1-6% by weight of anti-adsorption agent containing at least one of diol-based compounds and compounds containing multiple phosphoric acid groups; And the remaining water, so as to effectively prevent the etched metal from re-adsorbing on the substrate, without damaging the lower film, and show excellent etching characteristics for the etching target film.

The object of the present invention is to provide a copper foil for a printed wiring board, which has a blackened surface that can improve the visibility of the CCD in the terminal connection process and the detection accuracy of the AOI of the flexible printed wiring board. Appropriate roughness for flexible printed circuit board manufacturing, and has good etching properties. In order to achieve this object, the present invention adopts a blackened surface-treated copper foil for the manufacture of flexible printed wiring boards, etc., and the blackened surface-treated copper foil is a surface-treated copper foil having a roughened surface, and is characterized in that the roughened surface The surface is a black roughened surface having a maximum level difference (Wmax) of 1.2 μm or less, and a color tone having a lightness L* of L*a*b* colorimetric system of 30 or less.

The present invention relates to the field of chemical treatment of metal surfaces, more specifically, the present invention relates to a copper-containing lamination etchant, an etching method and its application. The etchant includes a main agent, and in parts by weight, the main agent includes 1 ‑20 parts of oxidizing agent, 0.01‑1 part of fluoride ion source, 0.01‑5 part of inorganic acid, 1‑15 part of organic acid, 1‑15 part of organic base, 0.01‑5 part of hydrogen peroxide stabilizer, 0.01‑1 part of metal corrosion inhibitor , make up 100 parts of solvent. The etchant provided by the invention has low cost, no phosphorus, is environmentally friendly, and has low waste treatment cost; it can effectively suppress cracks at the interface of different metals; it has high copper ion loading capacity; it has excellent etching characteristics, unilateral CD‑Loss<0.9um, the etching angle (taper) is 35‑45°; it can solve the problem of chamfering, effectively avoid bubbles in the insulating layer, and avoid the step of pre-dissolving copper.

The present invention relates to an etchant composition for a silver layer, which comprises, based on the total weight of the composition: 30 to 70 wt % of phosphoric acid, 0.5 to 10 wt % of nitric acid, 5 to 20 wt % of propionic acid, 0.01 to 10 wt % % azole compounds, and the balance of water; using the etchant composition to form a metal pattern and using the etchant composition to manufacture a display substrate method. The etchant composition of the present invention can prevent overetching of silver or silver alloy to form lines with low S / E, and thus can be used for fine pattern formation. In particular, the etchant composition of the present invention includes propionic acid instead of acetic acid used in conventional etchant compositions for silver layers, thereby increasing wettability, thereby significantly improving etching characteristics.

The present invention provides an antireflection coating composition, which can strongly absorb radiation of 100 to 300 nm by using the matting resin of the present invention, especially has high light absorption performance at 248 nm, and the extinction coefficient K reaches 0.4 or more or 0.5 or more, thereby Allows the use of thinner coatings and shorter etching times, and the prepared anti-reflection coating material is easy to remove, and is particularly suitable for use in thin-layer photoresists to obtain high-resolution photolithographic patterns; at the same time, the present invention The BARC layer also has an improved plasma etch rate relative to the photoresist material, enabling the integrity of the image to be transferred to the substrate for a good photoresist image. Further, through the interaction of solid components, the interference effect in the photoresist can be eliminated; and through the joint action of the catalyst, the crosslinking agent and the matting resin of the present invention, a kind of photoresist with good storage properties can be obtained. Stable, highly differential solubility antireflective coating composition after curing.

There is provided a titanium-copper alloy in which the adhesion strength with solder can be increased. The titanium-copper alloy comprises a base material and a plating layer provided on a surface of the base material, wherein the base material contains 1.5 to 5.0% by mass of Ti with a balance consisting of copper and unavoidable impurities, and the plating layer is selected from the group consisting of a Ni plating layer, a Co plating layer, and a Co—Ni alloy plating layer.

Provided is a plasma etching method comprising supplying heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas and oxygen (O2) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.