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Etching liquid composition and preparation method thereof

A technology of composition and etching solution, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as increased metal stability, decreased etching performance of etching solution, shortage, etc., and achieves minimization of bias (bias) Defects, improved etching characteristics, improved residue effects

Pending Publication Date: 2022-06-24
ENF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this case, residues or precipitates may be generated on the metal film over time due to deterioration of the etching performance of the etchant, increased residue generation, or insufficient stability of the dissolved metal

Method used

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  • Etching liquid composition and preparation method thereof
  • Etching liquid composition and preparation method thereof
  • Etching liquid composition and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0079] Experimental Example 1: Bias Evaluation

[0080] In order to evaluate the etching rate of the etching solution compositions according to the examples and comparative examples, after forming a three-layer film of ITO (indium tin oxide) / Ag / ITO as a test piece on a substrate, patterned light was formed on the three-layer film. photoresist. The above-mentioned substrates were subjected to an etching process using the thin-film etching liquid compositions according to the examples and comparative examples.

[0081] After filling a 10 kg wet etching machine with the etching liquid compositions of the Examples and Comparative Examples, the temperature was set to 40° C., and etching treatment was performed for 100 seconds on 1,000 test pieces to be evaluated. . After rinsing the etched sample with ultrapure water for about 60 seconds, at 3.0kgf / cm 2 nitrogen drying under pressure.

[0082] A scanning electron microscope (SEM; model: SU-8010, HITACHI) was used to measure the...

experiment example 2

[0083] Experimental Example 2: Residue Evaluation

[0084] In order to evaluate the degree of residue after etching with the etching solution compositions according to the Examples and Comparative Examples, each test piece according to the results of Experimental Example 1 was observed using a scanning electron microscope, and passed through the area between the ITO / Ag / ITO wirings. The area of ​​the remaining metal film is used to determine whether residues are formed.

[0085] Residue Evaluation Benchmark

[0086] None: No residue is produced

[0087] Yes: produce residue

experiment example 3

[0088] Experimental Example 3: Evaluation of Precipitates

[0089] In order to evaluate the degree of deposit formation in the etching process of the etching solution compositions according to the Examples and Comparative Examples, after forming the Ti / Al / Ti three-layer film, a photoresist was patterned on the above-mentioned three-layer film. After dry etching the patterned substrate, a substrate having a Ti / Al / Ti wiring having a width of 20 μm was produced by development. After that, after forming the ITO (indium tin oxide) / Ag / ITO three-layer film to prepare a substrate for evaluation, as shown in Example 1, the Examples and Comparative Examples were evaluated, and observation according to the scanning electron microscope was used. Each test piece was evaluated to determine whether residue formed. The amount of silver (Ag) particles generated at the upper end of the Ti / Al / Ti wiring was measured and evaluated according to the following criteria, as shown in Table 2.

[0090...

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Abstract

The present invention relates to an etchant composition for etching silver (Ag) or a silver-containing film and a method for preparing the same. According to the etchant composition of the present invention, in an etching step of silver or a silver-containing metal film, by improving residues and preventing the generation of deposits without damaging the underlayer film, deviation defects during the formation of fine wiring can be minimized, thereby improving etching characteristics.

Description

technical field [0001] The present invention relates to an etching solution composition for etching silver (Ag) or a silver-containing film and a preparation method thereof Background technique [0002] Generally, a display panel includes a display substrate formed with thin film transistors as switching elements for driving pixels. The above-mentioned display substrate includes a plurality of metal patterns, and the above-mentioned metal patterns are mainly formed by a photolithography method. The above-mentioned photolithography method is a process in which a photoresist film is formed on a metal film formed on a substrate as an object to be etched, and after the above-mentioned photoresist film is exposed and developed to form a photoresist pattern, the above-mentioned photoresist film is formed. The photoresist pattern is used as an etching stopper film and the above-mentioned metal film is etched using an etching solution composition, so that the metal layer can be pat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/30H01L21/3213
CPCC23F1/30H01L21/32134H01L27/124
Inventor 李宝姩朴相承金益俊丁锡一郑民敬金良姈金世训
Owner ENF TECH
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