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Manufacturing method of array substrate for display device, etchant composition and etching method

A technology for array substrates and display devices, which is applied in the fields of instruments, optics, and electric solid-state devices, etc., which can solve the problems of unsatisfactory user performance, side etching, etc. and straightness, the effect of preventing etching residue

Active Publication Date: 2019-09-10
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case of etching liquid compositions for copper-based metal films, although many types are currently used, the actual situation is that they cannot satisfy the performance required by users.
As an example, Korean Laid-Open Patent No. 10-2010-0090538 discloses an etchant composition for a copper-based metal film, which contains a certain amount of hydrogen peroxide, an organic acid, a phosphate compound, a water-soluble cyclic Amine compounds, water-soluble compounds having nitrogen atoms and carboxyl groups in one molecule, fluorine-containing compounds, polyol-type surfactants, and water, but the composition is not effective in side etch regulation and in etching of thick-film metal layers (Cu). There is a limitation in maintaining the etching rate according to the number of sheets processed

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～9 and comparative example 1～5

[0061] Examples 1-9 and Comparative Examples 1-5: Manufacture of etching solution composition

[0062] According to the composition shown in the following Table 1, 180 kg of etching liquid compositions were manufactured.

[0063] [Table 1]

[0064] distinguish h 2 o 2

ABF 5-MTZ IDA AS NHP TEG 5-ATZ water Example 1 18 1.0 0.05 1.0 0.1 - 1.5 margin Example 2 20 0.5 0.10 1.7 0.2 - 2.0 margin Example 3 22 0.1 0.15 2.3 0.3 - 2.5 margin Example 4 24 0.05 0.20 3.0 0.5 - 3.0 margin Example 5 15 0.1 0.05 2.0 0.5 2.0 margin Example 6 5 0.5 0.05 2.0 0.5 2.0 margin Example 7 20 0.1 0.01 2.0 0.5 2.0 margin Example 8 23 0.1 1.5 2.0 0.5 2.0 margin Example 9 23 0.1 2 2.0 0.5 2.0 margin Comparative example 1 22 0.1 - 2.3 0.3 - 2.5 margin Comparative example 2 22 0.1 0.15 2.3 - - 2.5 m...

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Abstract

The present invention relates to a copper-based metal film etching liquid composition which includes (A) 5 to 30 weight percent of hydrogen peroxide (H2O2), (B) fluorine compound 0.01 to 3% by weight, (C) 0.01 to 3% by weight of 5- (alkyl of 1 to 5 carbon atoms) -1H-tetrazole, (D) 0.5 to 5% by weight of a water-soluble compound having a nitrogen atom and a carboxyl group in one molecule, (E) 0.05 to 1% by weight of sulfate compound, (F) 1 to 5% by weight of polyhydric alcohol type surfactant, and (G) a residual amount of water with regard to the total weight of the composition, a method of manufacturing an array substrate for a display device using an etchant composition and an etching method. It is possible to provide a metal film etching liquid composition which can prevent step coverage failure and the incidence of etch residues.

Description

technical field [0001] The invention relates to a method for manufacturing an array substrate for a display device, a copper-based metal film etchant composition and an etching method. Background technique [0002] The process of forming metal wiring on a substrate in a semiconductor device generally includes steps utilizing the following processes: a metal film formation process by sputtering, etc.; photoresist coating, exposure, and development in selective areas A resist formation process; and an etching process, including cleaning processes before and after individual unit processes, and the like. The above-mentioned etching step refers to a step of leaving a metal film in a selective region using a photoresist as a mask, and generally, dry etching using plasma or the like or wet etching using an etchant composition is used. [0003] In such a semiconductor device, in recent years, resistance of metal wiring has become a major concern. This is because resistance is the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/18G02F1/1368H01L27/12
CPCC23F1/18G02F1/1368H01L27/1214H01L27/1259C23F1/10
Inventor 梁圭亨金童基金炼卓权五柄
Owner DONGWOO FINE CHEM CO LTD
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