76results about How to "Broad spectral response" patented technology

A process of forming a thin film photoactive layer of a perovskite photoactive device comprising: applying at least one coating of a perovskite precursor solution and a polymer additive to a substrate, wherein the at least one perovskite precursor solution comprises at least one reaction constituent for forming at least one perovskite compound having the formula AMX3 dissolved in a coating solvent selected from at least one polar aprotic solvent, the polymer additive being soluble in said coating solvent, and in which A comprises an ammonium group or other nitrogen containing organic cation, M is selected from Pb, Sn, Ge, Ca, Sr, Cd, Cu, Ni, Mn, Co, Zn, Fe, Mg, Ba, Si, Ti, Bi, or In, and X is selected from at least one of F, Cl, Br or I.

The invention belongs to the field of semiconductor catalysis, and discloses a preparation method of a bismuth trioxide-bismuth tungstate heterojunction photocatalyst. The method comprises the steps of compounding bismuth trioxide and bismuth tungstate with the molar ratio being 0.1:1 to 0.5:1, so as to form a heterojunction structure, and ensuring that bismuth trioxide is loaded on the surface of bismuth tungstate. According to the method, bismuth nitrate and ammonium metatungsten are taken as raw materails, and the bismuth trioxide-bismuth tungstate heterojunction photocatalyst is formed by one step through a solvothermal method. The preparation method is simple, the synthesis period is short, and a formed sample is high in purity and has a typical p-n heterojunction structure, can effectively restrain the compounding of photo-induced electron and holes, promotes the separation of photon-generated carriers, has the characteristics of high activity and wide spectral response, and is of great importance.

The invention discloses a carboxyl-containing perylene bisimide / oxygen-doped carbon nitride nanosheet heterojunction photocatalyst as well as a preparation method and application thereof. The photocatalyst is formed by compounding carboxyl-containing perylene bisimide and an oxygen-doped carbon nitride nanosheet through electrostatic interaction and pi-pi interaction, wherein the mass ratio of theoxygen-doped carbon nitride nanosheet to the carboxyl-containing perylene bisimide ranges from 1: 0.001 to 1: 0.8. The carboxyl perylene bisimide is modified on the oxygen-doped carbon nitride nanosheet through an in-situ method. Compared with the prior art, the photocatalyst disclosed by the invention has the following advantages: (1) compared with O-CN and PDI in the prior art, the photocatalyst disclosed by the invention has more excellent performances of photocatalytically degrading pollutants, killing pathogenic bacteria and photolyzing water to produce oxygen; and (2) the raw materialsare cheap, the process is simple, the product cost is effectively reduced, and the method is suitable for industrial mass production and has very high application prospect and practical value.

The invention provides a water-soluble fast reaction kinetics couple-based photoelectrochemical energy storage battery. When the battery is charged, in-situ transformation of light energy into chemical energy is achieved by using photoelectrochemical reaction driven by self-bias of narrow band gap photoelectrodes and the chemical energy is stored into an active material of a battery electrolyte; and when the battery is discharged, electrochemical reaction is carried out, thereby achieving transformation of the chemical energy into electric energy. The photoelectrochemical energy storage battery integrates a photoelectrochemical battery and a flow battery; the disadvantage that a solar cell cannot achieve electric energy storage is overcome; meanwhile, a single charging mode of the energy storage battery is also expanded; and solar energy in-situ transformation, storage and controllable utilization without assistance of external bias are achieved. Water-soluble fast reaction kinetics redox couples are adopted as the active material; the utilization rate of photo-induced carriers on the surfaces of photoelectrodes is close to 100%; meanwhile, the discharge power density of the battery can reach 0.5W / cm<2>; large-scale amplification can be achieved; and the photoelectrochemical energy storage battery is suitable for different scales of solar energy-energy storage-power generation processes.

The invention relates to the technical field of organic materials and provides a thienothiophene quinoid organic photoelectric material. The material is a compound which is shown as a structural formula (I); in the formula, R1, R2, R3, R4, R5 and R6 are selected from H, C1-C20 alkyl group or C1-C20 alkoxyl group; and m and n are integers of 0-10. The invention also provides a preparation method and application of the thienothiophene quinoid organic photoelectric material. Since the thienothiophene quinoid organic photoelectric material has a quinoid thiophene ring and a cyano group, wider spectral response is guaranteed, the photoelectric conversion efficiency of the material is increased, and better thermal stability and environmental stability are shown.

A process of forming a thin film photoactive layer of an optoelectronic device comprising: providing a substrate having a surface comprising or coated with a metal M selected from at least one of Pb, Sn, Ge, Si, Ti, Bi, or In; and converting the metal surface or metal coating of the substrate to a perovskite layer.

The invention relates to a double-junction depth PN junction photodiode based on standard CMOS (Complementary Metal Oxide Semiconductor) technology. The double-junction depth PN junction photodiode comprises a deep junction PN junction photodiode and a shallow junction PN junction photodiode, wherein the deep junction PN junction photodiode is composed of a semiconductor silicon P type substrate and an N type well, and the shallow junction PN junction photodiode is composed of a P type source-drain injection region and the N type well; the semiconductor silicon P type substrate is an anode of the deep junction PN junction photodiode, and the N type well is a cathode of the deep junction PN junction photodiode; the P type source-drain injection region is an anode of the shallow junction PN junction photodiode, and the N type well is a cathode of the shallow junction PN junction photodiode; the semiconductor silicon P type substrate form heavily doped ohmic contact through the P type source-drain injection region, and is leaded out through a metallic contact hole; and the N type well forms heavily doped ohmic contact through an N type source-drain injection region, and is leaded out through a metallic contact hole.

The invention relates to a perovskite / crystalline silicon laminated solar cell. The perovskite / crystalline silicon laminated solar cell comprises a crystalline silicon cell, a composite junction and aperovskite cell, the composite junction is arranged between the crystalline silicon cell and the perovskite cell, the crystalline silicon cell comprises a crystalline silicon substrate, the surface,close to the composite junction, of the crystalline silicon substrate is a textured surface, and the composite junction is made of nc-Si:H(p+) / nc-Si:H (n+). The laminated solar cell is of a suede structure, light reflection can be effectively reduced, the spectral absorption efficiency and the current density are increased, and therefore the photoelectric conversion efficiency is improved. The adopted material is an nc-Si:H (p+) / nc-Si:H (n+) composite junction, deposition of the perovskite cell in a textured structure can be avoided, a uniform thin layer is prepared, and the spectral absorption efficiency and the current density are increased, so that the photoelectric conversion efficiency is improved.

The invention belongs to the field of photoelectronic materials, and discloses a thiophene organic semiconductor material and a preparation method and application thereof. The copolymer has a general formula (P), wherein in the formula, x+y is equal to 2; x is more than or equal to 1, and y is more than 0 and is less than 1; n is more than 1 and is less than or equal to 100; R1 and R4 are alkyl having 1 to 20 carbon atoms; and R2 and R3 are hydrogen and alkyl having 1 to 20 carbon atoms or phenyl substituted by alkyl having 1 to 20 carbon atoms or alkoxy having 1 to 20 carbon atoms or are thephenyl. Compared with the prior art, the invention has the advantages that: the organic semiconductor material is prepared by polymerizing a cyclopentadiene [2,1-b:3,4-b'] bithiophene unit, a thiophene unit and a quinoxaline unit, so the carrier mobility of the organic semiconductor material is increased, spectral response is broadened, and the organic semiconductor material has high carrier transmission property and electrochemical property; and the alkyl and the like can be introduced by a simple and convenient method to improve solubility. The preparation process of the semiconductor material is simple and easy to operate and control, and is suitable for industrial production.

The embodiment of the invention provides a pixel unit of an image sensor based on perovskite photosensitive material and a preparation method thereof. A photosensitive pixel unit comprises a metal oxide thin film transistor and an organic-inorganic hybrid perovskite photodiode. The metal oxide thin film transistor comprises a base substrate, a gate metal electrode, a gate insulating lay, a metal oxide semiconductor thin film, a source / drain metal electrode, a silicon dioxide protection layer and a hydrophobic layer thin film. The organic-inorganic hybrid perovskite photodiode comprises an indium tin oxide ITO electrode, a pattern electron transport layer, an organic-inorganic hybrid perovskite material layer, a charge transport layer and a metal electrode.

The invention provides a benzodithiophene-benzodi(benzothiadiazole) containing copolymer, preparation and application thereof. The benzodithiophene-benzodi(benzothiadiazole) containing copolymer is a compound P with a general formula shown as the specification, wherein R1 and R2 are alkyl of C1-C20, R3 and R4 are alkyl of C1-C20, alkoxy of C6-C16 or a thiophene derivative group, which has an alkyl side chain of C16, and n is an integer ranging from 1 to 100. The benzodithiophene-benzodi(benzothiadiazole) containing copolymer contains a new benzodi(benzothiadiazole) conjugated unit, the absorption spectrum of the copolymer undergoes red shift and has a high matching degree with a solar spectrum. Meanwhile, with a planar conjugated structure, the copolymer provided by the invention has the advantages of high charge carrier migration rate and high energy conversion efficiency, simple and controllable preparation method, and has good application prospects in polymer solar cells, organic light-emitting devices and other photoelectric material fields.

The invention relates to the technical field of organic materials and provides a copolymer containing a benzotriazol group. The copolymer has a structural formula (I) shown as the specification, wherein R is an alkyl group from C1 to C32 or alkoxy-monosubstituted phenyl group from C1 to C38, R' is an alkyl group from C1 to C32, and n is an integer of 10-50. The invention also provides a preparation method and application of the copolymer containing the benzotriazol group. The copolymer containing the benzotriazol group contains benzotriazol and carbazole groups and has favorable photoelectric properties, thermal stability and film forming capability, thereby being a novel red-light-emitting copolymer.

The invention discloses a signal acquisition and processing method of a novel direct reading spectrometer, and is suitable for characteristics of a periodic spark light source of the direct reading spectrometer. The method comprises the steps: firstly, according to a split optical path structure of the direct reading spectrometer, determining a space position of a split optical path corresponding to each wave band of to-be-detected light, and placing a light detection module corresponding to each to-be-detected light path wave band; carrying out phase inversion treatment of electrical signals outputted by the light detection modules, then sending to a signal channel of a phase-locked amplifier, and carrying out band-pass filtering and amplification, to reduce spurious noise; sending a periodic signal having the same frequency as that of a to-be-detected signal into a reference channel, and adjusting the phase position to be the same as that of the to-be-detected signal; carrying out cross-correlation operation of outputted signals of the signal channel and the reference channel, and inhibiting noise having no correlation with the reference signal; and extracting low frequency components outputted by a correlator, to obtain the amplitude value and phase position information of the to-be-detected signal. The method can shrink the size of an optical system, reduces the investment of a detector, has high detection sensitivity and low noise, and can improve the resolution of the direct reading spectrometer.

A conjugated fluorene polymer is provided, which is defined by structure formula (1), wherein: R1, R2, R3, R4 represent H or C1-C20 alkyl, x+y=1, x≠0, y≠0, n is a natural number between 1-1000, Ar1 is a group containing thiophene. A preparation method for the conjugated fluorene polymer and a solar cell device containing the conjugated fluorene polymer are also provided. Due to fluorene or its derivatives and conjugated structure, the conjugated fluorene polymer exhibits an excellent light stability and thermal stability. In addition, since thiophene and benzothiadiazole groups are introduced into the main chain of the polymer, the spectral response range of the polymer is broadened.

The invention discloses a Z-type catalyst with a photothermal synergistic function and application thereof. The Z-type catalyst AgBr / Ag / SrTiO3-TiNT consists of SrTiO3 (strontium titanat), TiO2 (titanium dioxide) nanotube array, AgBr (silver bromide) and Ag (silver). The Z-type catalyst can be applied to the photothermal synergistic catalyzing, higher catalyzing activity is obtained at lower reaction temperature, the good thermal stability is realized, and the repeated utilization is conveniently realized; the noble metal (Ag) is used as an electron transmitter to form the Z-type catalyst, so as to effectively accelerate the separating of photoelectron cavity pairs and transfer of electrons in the catalyst, showing the broader spectrum response and higher separating efficiency of photon-generated carriers, and improve the stability and oxidation-reduction ability of the catalyst. The Z-type catalyst has the advantages that the preparation conditions are simple, the cost is lower, and the Z-type catalyst is suitable for industrialized production.

A process of forming a thin film photoactive layer of a perovskite photoactive device comprising: applying at least one coating of a perovskite precursor solution and a polymer additive to a substrate, wherein the at least one perovskite precursor solution comprises at least one reaction constituent for forming at least one perovskite compound having the formula AMX3 dissolved in a coating solvent selected from at least one polar aprotic solvent, the polymer additive being soluble in said coating solvent, and in which A comprises an ammonium group or other nitrogen containing organic cation, M is selected from Pb, Sn, Ge, Ca, Sr, Cd, Cu, Ni, Mn, Co, Zn, Fe, Mg, Ba, Si, Ti, Bi, or In, and X is selected from at least one of F, Cl, Br or I.

The invention relates to a low-oxygen dependent X-photodynamic nano photosensitizer as well as a preparation method and an application thereof. The low-oxygen dependent X-photodynamic nano photosensitizer comprises nano scintillation crystal particles capable of converting a high-energy radiation ray into an ultraviolet light, a silicon dioxide layer cladded on the surface of the nano scintillation crystal, zinc oxide nanoparticles loaded on the outer surface of the silicon dioxide layer, and polyethylene glycol grafted on the surfaces of the zinc oxide nanoparticles. The nano scintillation crystal capable of converting the high-energy radiation ray into the ultraviolet light is taken as a functional kernel; the nano scintillation crystal can emit a characteristic ultraviolet ray when being irradiated by an X ray; and the characteristic ultraviolet ray can be efficiently absorbed by shell ZnO semiconductor quantum dots, so as to generate electron hole pairs. A lot of high-activity hydroxyl radicals (.OH) and superoxide anions (.O2<->) are generated by complicated physical and chemical reaction, so as to damage cancer cells.

The invention discloses a self-assembled tetra (4-carboxyl phenyl) porphyrin / oxygen-doped carbon nitride nanosheet heterojunction photocatalyst as well as a preparation method and application thereof.The photocatalyst is formed by compounding self-assembled tetra (4-carboxyl phenyl) porphyrin (SA-TCPP) and an oxygen-doped carbon nitride nanosheet (O-CN) through electrostatic interaction and pi-piinteraction, the mass ratio of the O-CN to the SA-TCPP ranges from 1: 0.001 to 0.8; the SA-TCPP is modified on the O-CN through an in-situ method. Compared with the prior art, the photocatalyst disclosed by the invention has the following advantages that (1) compared with O-CN and SA-TCPP in the prior art, the photocatalyst disclosed by the invention has more excellent performances of photocatalytically degrading pollutants and photolyzing water to produce oxygen; and (2) the method disclosed by the invention is green, safe, simple in process, low in cost and suitable for industrial mass production, and has relatively high application prospect and practical value.

The invention relates to a saturable absorber of a laser, which aims at the problems of poor thermal conductivity, low stability, narrow spectral response, complex preparation process, short working life and high production cost of the existing saturable absorber, and provides a preparation method of the saturable absorber and a reflective and transmissive saturable absorber. A method for preparea saturable absorbent comprises that follow steps: 1) dispersing a two-dimensional nanomaterial in a dispersion liquid and performing ultrasonic treatment to obtain a two-dimensional nanomaterial dispersion liquid; 2) place that porous glass in a two-dimensional nano-material dispersion liquid, screen and adsorbing under the ultrasonic condition to form a composite body of the porous glass and thetwo-dimensional nano-material; 3) take out that composite body of the porous glass and the two-dimensional nanometer material and drying; 4) annealing the composite body of the porous glass and the two-dimensional nanometer material after the drying treatment; and 5) cutting and polishing the composite body of the annealed porous glass and the two-dimensional nanometer material to obtain a saturable absorber.

The invention discloses an AlGaN-PZT focal plane detector, which adopts a structure in which two material with different response wave bands are stacked and integrated in the same direction. By using that layers in a multi-layer film structure for optical absorption of different photon energies are different, the organic combination of the absorption of wide wave band from infrared light to ultraviolet light with high resolution is realized. As an ultraviolet absorption layer, an epitaxial layer absorbs the incident photon of which the energy is more than a band gap width, and the incident photon is transformed to photocurrent; at the same time, as a window layer, the epitaxial layer allows the incident photons of which the energy is less than the band gap width to transmit. The transmitted photons are absorbed and transformed into heat by LaNiO3 and the heat is transmitted to PZT material to obtain optical signals by utilizing pyroelectric property. The invention has the advantages that the invention is applicable to the application of the focal plane in large scale and is able to be operated under room temperature.

The invention provides an indium tin oxide / vertical graphene photoelectric detector composite structure and a preparation method thereof and belongs to the technical field of a photoelectric detector.The photoelectric detector comprises the following components from the bottom up in sequence: glass serving as a substrate of the device, vertical graphene serving as an optical absorption layer andan electron transport layer of the device, an ITO (indium tin oxide) thin film serving as a transparent current assisted diffusion layer, and titanium / gold electrodes arranged at the two sides of thevertical graphene and connected to an external power source. Since the vertical graphene has a broadband spectrum response characteristic, the detector operates in bands from the visible light band tothe infrared band; the designed ITO thin film can effectively transfer photo-induced carriers, thereby suppressing defect influence and improving output photocurrent of the device; besides, the detector has high light absorption rate and light response, and can work under a low bias voltage; the process is simple and repeatable; and detection efficiency and rate of finished product of the detector are improved effectively.

The invention relates to the technical field of preparation of photoelectric materials, specifically to a sulfur-containing photoelectric material and a preparation method thereof. The organic photoelectric material prepared by using the preparation method provided by the invention has a structure containing a thiophene ring with a five-membered ring structure which conforms to a Huckel's rule andhas moderate energy band gap, wide spectral response and good heat stability and environmental stability; thus, the organic photoelectric material provided by the invention has excellent photoelectric properties, high conversion efficiency and low production cost, and is superior to conventional common OLED devices. The invention also provides a preparation method for the organic photoelectric material. The preparation method provided by the invention is simple, has easily-available raw materials, and can meet the needs of industrial development; and the organic optoelectronic material provided by the invention has good application effect in OLED light-emitting devices, and has good industrial prospects.

The invention relates to a solar cell device based on strain type heterojunction quantum dots, in particular to a manufacturing method of the solar cell device, and belongs to the field of solar cell materials. The cell device comprises at least two Ge / Si quantum dot structural layers growing on a doped silicon substrate. The Ge / Si quantum dot structural layers are composed of Si film layers including Ge quantum dots with the diameter ranging from 2 nm to 7 nm, the thickness of the innermost Si film layer ranges from 2 nm to 4 nm, and the thickness gradually increases layer by layer. The outermost quantum dot structural layer is a SiO2 coverage film layer filling the clearances of the quantum dots, and a quantum dot array filling film multi-layer structure is formed. A layer of silicon doped layer protection film with the thickness ranging from 10 nm to 20 nm grows outside the coverage film layer, and electrodes grow on the outer surface of the silicon doped layer and the outer surface of the silicon substrate. The energy band range of the device is expanded to be between 0.4 eV to 0.22 eV, the corresponding conversion efficiency ranges from 55 percent to 57 percent, and can be improved by more than seven percent by being compared with that of the prior art, and the photoelectric conversion efficiency of a solar cell is obviously improved.

The invention belongs to the field of the photoelectron material, and discloses a copolymer containing thieno pyrroledione units, a preparation method, and an application thereof. The copolymer has a structure formula (I), wherein R1, R2 and R3 are alkyl containing carbon atoms of 1-20, n is an integer, and is more than 1 and less than or equal to 100, m is an integer, and is more than or equal to 1 and less than or equal to 5. Compared to the prior art, with the present invention, the alkyl is introduced to improve the solubility and the molecular weight of the product so as to achieve the spin-coating polymer or the spin-coating oligomer; the polymer formed by the thieno pyrroledione monomers and the thiophene monomers can form a strong donor-acceptor structure, such that the stability of the material is improved, the energy band gap of the material is reduced so as to increase the absorption range of the sunlight and improve the photoelectric conversion efficiency.

A copolymer containing fluorenylporphyrin-anthracene is disclosed, which comprises a polymer represented by formula (1), in which R1, R2, R3 and R4, which may be identical or different, are C1-C16 alkyl, and n is an integer of 1 to 100. A preparation method of the copolymer containing fluorenylporphyrin-anthracene and the application thereof in manufacture of solar cell devices, organic field-effect transistors, organic electroluminescent devices, organic optical storage device, organic nonlinear materials or organic laser devices are also disclosed.

The invention discloses a sulfonic acid tetraphenyl porphyrin nano-fluorescent material and a preparation method thereof, which relate to a fluorescent porphyrin material and a preparation method thereof. The sectional shape of the material is of a rectangular sheet or strip or sheet and strip. The method comprises the following steps: preparing a TPRS alcohol solution first, preparing a TPPS nano-fluorescent material dispersion system, and obtaining a product through separation and drying. The material has smaller size and better photosensitivity, has good characteristics of a porphyrin monomer such as rigidity and flexibility, electronic buffer capacity, photosensitivity, high chemical stability, wide spectral response, and also has special properties after the nanometer treatment such as small-size effect, surface effect, quantum effect, interfacial effect. The method is simple, has low production cost, and is convenient for promotion and application. The material prepared by adopting the method can be widely used as markers, photosensitive materials as well as sensitive recognition elements and materials for constructing photoelectric devices, molecular devices and sensors.

The invention relates to the organic material technology field. An organic photoelectric material containing nitrogen thiophene is provided, and comprises a compound expressed by structural formula (1), wherein R1, R2, R3 and R4 are same or different alkyls expressed as H or C1-C20; m and n stand for same or different integers between 0-10. The invention also provides a manufacturing method and application of the organic photoelectric material containing nitrogen thiophene. Because of possessing thiophene ring and cyan, the organic photoelectric material containing nitrogen thiophene has wide spectrum response, good heat stability and environmental stability. Synthetic route in manufacturing method of the organic photoelectric material containing nitrogen thiophene is simple, thereby manufacturing cost is low and application prospect is wide.

The invention relates to the technical field of organic materials, and provides a silicon-containing thiophene organic photoelectric material, which comprises compounds shown as a structural formula (1). In the formula, R1, R2, R3 and R4 are same or different, and refer to H or C1-C20 alkyl; and m and n are same or different and refer to an integer from 0 to 10. The invention also provides a manufacturing method for the silicon-containing thiophene organic photoelectric material and application of the silicon-containing thiophene organic photoelectric material. The silicon-containing thiophene organic photoelectric material has thiophene ring and cyan, so the silicon-containing thiophene organic photoelectric material has wider spectral response and higher thermal stability and environmental stability. The manufacturing method for the condensed ring thiophene organic photoelectric material has the advantages of simple synthetic route, low manufacturing cost and wide application prospect.

A process of forming a thin film photoactive layer of an optoelectronic device comprising: providing a substrate having a surface comprising or coated with a metal M selected from at least one of Pb, Sn, Ge, Si, Ti, Bi, or In; and converting the metal surface or metal coating of the substrate to a perovskite layer.