Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector and preparation method thereof

A near-infrared optical and electrical detector technology, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problem that active materials are not easy to agglomerate, and achieve the effect of good mechanical strength, good mechanical properties, and wide spectral response

Inactive Publication Date: 2021-07-09
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF10 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there are certain difficulties in the preparation method of the transparent electrode of the photodetector and the selection of the semiconductor material. Therefore, it is necessary to develop a flexible and transparent near-infrared photodetector with a highly transparent electrode structure and the active material is not easy to agglomerate, so as to further expand its The scope of application to meet people's actual needs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector and preparation method thereof
  • Two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector and preparation method thereof
  • Two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] In order to overcome some shortcomings of traditional rigid gold electrode 0 / ID near-infrared photodetectors, such as easy agglomeration of active materials, poor mechanical properties of devices, low light transmittance, and large dark current. The disclosure provides a two-dimensional Te nanosheet flexible transparent near-infrared photodetector and a preparation method thereof, the two-dimensional Te nanosheet flexible transparent near-infrared photodetector comprising: a flexible substrate, a transparent electrode and a two-dimensional Te nanosheet; The transparent electrode is located on the flexible substrate, and the material of the transparent electrode is MXene-Ti 3 C 2 T x ; The two-dimensional Te nanosheets are built on the positive and negative electrodes of the transparent electrode, and connected to the positive and negative electrodes of the transparent electrode. The disclosed transparent MXene-Ti 3 C 2 T x The electrodes are made of two-dimensional...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
sizeaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The invention provides a two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector and a preparation method thereof. The two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector comprises a flexible substrate, a transparent electrode and two-dimensional Te nanosheets; the transparent electrode is located on the flexible substrate, and the material of the transparent electrode is MXene-Ti3C2Tx; the two-dimensional Te nanosheets are erected on the positive electrode and the negative electrode of the transparent electrode and are communicated with the positive electrode and the negative electrode of the transparent electrode. The electrode is made of the two-dimensional material and can be in better contact with the two-dimensional active material, so that the device has lower dark current, and the current is more stable along with time change in the whole test process.

Description

technical field [0001] The disclosure relates to the field of flexible electronic devices, in particular to a flexible transparent near-infrared photodetector of two-dimensional Te nanosheets and a preparation method thereof. Background technique [0002] With the advancement of science and technology and the development of the times, people have higher and higher requirements for conventional electronic devices. In order to better meet people's needs and expand the application range of electronic devices, flexible electronic devices have become a focus of attention. Nowadays, informatization and networking have become the themes of global development. As the basis of optoelectronics and microelectronics, optical communication technology has the advantages of high confidentiality and strong environmental adaptability, and photodetectors are the most basic for optical communication. One of the devices, it has broad application prospects in many fields such as military and civ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/0224H01L31/0272H01L31/0352H01L31/0392H01L31/18
CPCH01L31/109H01L31/022408H01L31/022466H01L31/0272H01L31/035209H01L31/03926H01L31/18H01L31/1884Y02P70/50
Inventor 沈国震胡楚乔李腊刘伟佳
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com