327results about How to "Avoid excessive current" patented technology

An asymmetric insulated-gate field effect transistor (100U or 102U) is provided along an upper surface of a semiconductor body so as to have first and second source / drain zones (240 and 242 or 280 and 282) laterally separated by a channel zone (244 or 284) of the transistor's body material. A gate electrode (262 or 302) overlies a gate dielectric layer (260 or 300) above the channel zone. A pocket portion (250 or 290) of the body material more heavily doped than laterally adjacent material of the body material extends along largely only the first of the S / D zones and into the channel zone. The vertical dopant profile of the pocket portion is tailored to reach a plurality of local maxima at respective locations (PH-1-PH-3-NH-3) spaced apart from one another. This typically enables the transistor to have reduced current leakage.

A rechargeable battery assembly comprises a built in connector, circuitry to provide charge control, at least one rechargeable battery unit, and circuitry providing a further function. The battery assembly is mechanically reversible between a deployed configuration having a general form and functions of a conventional battery format and a charge configuration in which the connector is made accessible. In the deployed configuration the battery assembly is capable of providing a discharge to at least one voltage level and can be charged by means of a suitable external charger device. In the charge configuration the battery assembly can be charged by means of the integral charge control circuitry when the connector is connected to a suitable powered receptacle on a computing or peripheral device.

A magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate, with each memory stack having two memory cells stacked along the Z axis and each memory cell having an associated biasing layer. Each biasing layer reduces the switching field of its associated cell by applying a biasing field along the hard-axis of magnetization of the free layer of its associated cell. The free layers in the two cells in each stack have their in-plane easy axes of magnetization aligned parallel to one another. Each biasing layer has its in-plane magnetization direction oriented perpendicular to the easy axis of magnetization (and thus parallel to the hard axis) of the free layer in its associated cell. The hard-axis biasing fields generated by the two biasing layers are in opposite directions.

An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.

To provide additional charge storage for an electric vehicle, an additional battery (100) is connected in parallel with a regenerative braking direct charged battery (22) through a current limiting circuit (104 or 120). The additional battery (100) is charged by an external charger such as a plug-in charger or a solar panel that supply minimal current to prevent generation of battery heat. Current flows from the additional battery (100) to the regenerative braking charged batteries (22) so that both batteries can be charged. However, when excessive charge is drawn to drive the vehicle electric motor (20), the current limiter circuit (104 or 120) serves to prevent the discharge of additional battery (100) from creating excessive heat in the additional battery (100). Further, when regenerative braking is applied the current limiter circuit (120), or a diode buffer (102) in combination with current limiter (104), serves to prevent charging from creating excessive heat in the additional battery (100) and eliminates the need for a cooling structure in the additional battery (100).