129results about How to "Adjustable voltage" patented technology

A storage subsystem includes a charge pump that receives a power signal from a host system, and generates a regulated power signal that is provided to the storage subsystem's controller. When the power signal from the host is interrupted, the charge pump additionally acts as a backup power supply to enable the storage subsystem to continue to operate temporarily, and power isolation circuitry in the storage subsystem prevents power from flowing back to the host system. The storage subsystem further includes a digitally programmable voltage detection circuit that accepts various supply voltages and asserts a busy signal to the controller when an anomaly in the power signal is detected. The controller includes logic circuitry that will block the host system from performing write operations to the storage subsystem either when the voltage detection circuit asserts a busy signal or when the controller is busy executing memory operation commands.

The present invention describes a transistor based on a Hetero junction FET structure, where the metal gate has been replaced by a stack formed by a highly doped compound semiconductor and an insulating layer in order to achieve enhancement mode operation and at the same time drastically reduce the gate current leakage. The combination of the insulating layer with a highly doped semiconductor allows the tuning of the threshold voltage of the device at the desired value by simply changing the composition of the semiconductor layer forming the gate region and / or its doping allowing a higher degree of freedom. In one of the embodiment, a back-barrier layer and a heavily doped threshold tuning layer are used to suppress Short Channel Effect phenomena and to adjust the threshold voltage of the device at the desired value. The present invention can be realized both with polar and non-polar (or semi-polar) materials.

The present invention provides a semiconducting structure including a substrate having an SOI region and a bulk-Si region, wherein the SOI region and the bulk-Si region have a same or differing crystallographic orientation; an isolation region separating the SOI region from the bulk-Si region; and at least one first device located in the SOI region and at least one second device located in the bulk-Si region. The SOI region has an silicon layer atop an insulating layer. The bulk-Si region further comprises a well region underlying the second device and a contact to the well region, wherein the contact stabilizes floating body effects. The well contact is also used to control the threshold voltages of the FETs in the bulk-Si region to optimized the power and performance of circuits built from the combination of the SOI and bulk-Si region FETs.

The present device generally relates to a waterless electronic hookah machine. The waterless electronic hookah machine has a main body portion, a handle section and a flexible wire cable (or “connector”). The flexible wire cable electrically connects the main body portion with the handle section. The handle section has a removable mouthpiece containing a cartridge having a liquid. When a user activates a push button or vacuum switch on the handle section, a power source in the main body portion sends power through the flexible wire cable to an atomizer located in the handle section which then heats the liquid in the cartridge of the mouthpiece and a vapor is created for the user to inhale. The device allows multiple users (generally up to six) to use the device at the same time wherein each user may experience a different flavor smoke. Flavors may be easily switched without the need to rinse out the electronic hookah machine. The user is able to adjust the voltage going to the handle.

The invention relates to an intelligent performance analysis and testing bench for batteries of motorized automobiles, which allows the studying and analysis on the charging and discharging characteristics of various batteries in a lab, so as to reduce the studying cost, shorten the studying time, simplify the studying procedures and improve the analysis accuracy. The invention comprises a main system interface module comprising a hi-voltage charging parameter setting module and a hi-voltage charging display module. The hi-voltage charging comprises hi-voltage programmed charging and hi-voltage constant-current charging. The main system interface module additionally comprises a low-voltage charging parameter setting module and a low-voltage charging display module. The low-voltage charging comprises low-voltage programmed charging and low-voltage constant-current charging. The main system interface module additionally comprises a discharging parameter setting module and a discharging display module. The charging comprises programmed discharging and constant-current discharging.

The present invention provides a semiconductor device and a method of forming the same. The semiconductor device includes a substrate, a first transistor and a second transistor. The first transistor and the second transistor are disposed on the substrate. The first transistor includes a first channel and a first work function layer. The second transistor includes a second channel and a second work function layer, where the first channel and the second channel include different dopants, and the second work function layer and the first work function layer have a same conductive type and different thicknesses.

The invention discloses electric insulation electric-heating aging test equipment, which comprises non-vignetting high-voltage testing transformer and at least one test box, wherein the box body of the test box is adiabatic; the inside of the test box is provided with a heating device; the top of the test box is provided with at least one high-voltage electrode connected with the high-voltage output end of the non-vignetting high-voltage testing transformer, while the lower part is provided with at least one detection terminal; and the high-voltage electrode and the detection terminal are respectively insulated from the box body of the test box. The electric insulation electric-heating aging test equipment can effectively simulate the electrical and thermal stress on electric equipment during operation, and carries out experiment on a plurality of test samples under different temperatures, voltage types and voltage grades; moreover, the test equipment obtains the data of current waveform and local discharging signal during the aging process of test samples.

[Solution] An actually used flying capacitor-type multilevel power conversion circuit has variations in the characteristics of main semiconductor switches, and includes parasitic elements such as parasitic resistance, parasitic capacity, and parasitic inductance in the circuit, which causes flying capacitors to be charged and discharged to different quantities contrary to ideal case, making it necessary to have voltage sensors for flying capacitor voltage detection and a main semiconductor switch control mechanism in order to suppress fluctuation of the flying capacitor voltages from prescribed values. Furthermore, this circuit becomes unpractical when the number of levels is increased. The present invention provides a circuit that adjusts flying capacitor voltages to prescribed values automatically without voltage sensors for detection of individual flying capacitor voltages, and a main semiconductor switch control mechanism, by additionally providing a main circuit thereof with a closed circuit for suppressing flying capacitor voltage fluctuations by means of an adjusting current.

The invention is directed to a system and method for regulating a load (such as a CPU). A pulse-width-modulation (PWM) regulator calculates the duty cycle of the control pulse from a PWM controller, and then compares the duty cycle to a predetermined threshold. Thereafter, the PWM regulator regulates working conditions, such as clock frequency, supplied voltage, or fan spin speed, based on the above comparison.

An object of the present invention is to improve the performance of a semiconductor device having a CMISFET. Each of an n channel MISFET and a p channel MISFET which form the CMISFET includes a gate insulating film composed of a silicon oxynitride film and a gate electrode including a silicon film positioned on the gate insulating film. Metal elements such as Hf are introduced near the interface between the gate electrode and the gate insulating film with a surface density of 1×1013 to 5×1014 atoms / cm2. The impurity concentration of channel regions of the n channel MISFET and the p channel MISFET is controlled to be equal to or lower than 1.2×1018 / cm3.

The invention relates to matrix image sensors of the bolometric type, in which each pixel comprises a bolometric resistor whose value varies according to the thermal flow received by the pixel. The resistor is biased by a bias voltage of value Vpol. The current that passes through it is compensated for by a compensation current Icomp, the difference between these currents being integrated in order to produce a measurement signal. The bias voltage (or the compensation current) is adjusted pixel by pixel, for example during a calibration phase, so that all the pixels have an apparent identical sensitivity despite the dispersion of the nominal value of the bolometric resistor. The adjustment is carried out in an analogue manner by storing an individual voltage specific to each pixel in a sensitivity trimmer capacitor specific to this pixel. The capacitor acts directly on the adjustment of the bias voltage or on other parameters playing a role in the sensitivity of the pixel (integration time for example). The spatial noise is thereby considerably reduced.

An RFID tag capable of enhancing the reliability of products and an RFID system having the same are provided. The RFID tag includes a tag antenna receiving waves from an RFID reader, and a tag driver. The tag driver includes an accumulation mode capacitor adjusting a capacitance value corresponding to an input voltage. That is, the tag driver adjusts the amplitude of a modulated carrier wave using the accumulation mode capacitor. Accordingly, the RFID tag adjusts the impedance of the tag driver without adjusting the current transmitted from the tag driver. Therefore, impedance adjustment of the tag driver can prevent the voltage transmitted from the tag driver from being lower than the reference voltage, and modulation and demodulation can be stably performed. As a result, the reliability of products can be enhanced.

A power steering control device includes a torque sensor that detects a steering torque and outputs a torque signal having a torque neutral voltage is determined based on a predetermined reference voltage, a reference-voltage generator unit that generates the reference voltage, an A / D converter unit that A / D converts the torque signal and the reference voltage, a calculator unit that calculates a steering assist torque based on the A / D converted torque signal, a current controller unit that supplies a driving current in accordance with the assist torque to a steering assist motor, a reference-voltage generator unit that generates the reference voltage and outputs the reference voltage to the A / D converter unit and a fault diagnosis unit that monitors the A / D converted reference voltage and performs a predetermined fault diagnosis process.

A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter. Embodiments include usage of self-activating adjustable power limiters in combination with series switch components in a switch circuit in lieu of conventional shunt switches.

The invention discloses an organic electroluminescent diode service life tester, which comprises a microprocessor, a display and prompt circuit, a parameter setting circuit, a data storage circuit, a time-base circuit, a temperature measuring circuit, a communication interface circuit, a numerically controlled voltage output circuit, a numerically controlled constant current source circuit and a measuring circuit. The numerically controlled voltage output circuit provides voltages for a diode to be tested, and the numerically controlled constant current source circuit provides constant current for the diode to be tested; and the measuring circuit is connected with the diode to be tested so as to measure the voltage and luminous intensity of the diode to be tested. The tester provides adjustable voltage, outputs constant current under set voltage, sets a voltage value and a constant current value through an external keyboard, performs measurement and adjustment through the measuring circuit, provides the stable test voltage and current and improves the test accuracy. Besides, the tester can measure the environmental temperature of a sample to be tested, so the tester can correct a brightness test result by utilizing the temperature under the condition of high accuracy requirement.

A method for forming a FinFET device is provided. The method includes providing a substrate having a first region and a second region; and forming a plurality of fins on the substrate. The method also includes forming a plurality of doping regions with different doping concentrations in the fins in the first region; and forming a plurality of dummy gate structures over the plurality of fins. Further, the method includes forming source and drain regions in the plurality of fins at both sides of the dummy gate structures; and removing the dummy gate structures to form a plurality of openings to expose the plurality of fins. Further, the method also includes forming a plurality of work function layers with different work functions on the exposed fins in the openings in the second region; and forming gate structures in the openings.

The invention discloses an electrical insulation electric heating aging test device under composite voltage, which comprises two corona-free high-voltage test transformers and at least one test box, wherein a box body of the test box insulates heat; the test box is internally provided with a heating device; at least one high-voltage electrode which is connected with high-voltage output ends of the corona-free high-voltage test transformers is introduced to the top of the test box; the lower part of the test box is provided with at least one detection terminal; and the high-voltage electrodes and the detection terminals are respectively insulated with the box body of the test box. The electrical insulation electric heating aging test device under composite voltage provided by the invention can effectively simulate the composite electricity and heat stress borne by an electrical device in operation, also can test sample products under different temperatures, voltage types and voltage grades at the same time, and can obtain the breakdown voltage and breakdown time of the sample products in the aging process.

A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter.

The present invention provides a semiconducting structure including a substrate having an SOI region and a bulk-Si region, wherein the SOI region and the bulk-Si region have a same or differing crystallographic orientation; an isolation region separating the SOI region from the bulk-Si region; and at least one first device located in the SOI region and at least one second device located in the bulk-Si region. The SOI region has an silicon layer atop an insulating layer. The bulk-Si region further comprises a well region underlying the second device and a contact to the well region, wherein the contact stabilizes floating body effects. The well contact is also used to control the threshold voltages of the FETs in the bulk-Si region to optimized the power and performance of circuits built from the combination of the SOI and bulk-Si region FETs.

An adjusting method of display parameter and a liquid crystal display (LCD) system are provided. The adjusting method includes: obtaining a first luminance value and a second luminance value when a LCD panel displaying a minimum grayscale image and a maximum grayscale image respectively; based on the first luminance value, the second luminance value and a standard Gamma curve of the LCD panel, obtaining each target luminance value conforming to the standard Gamma curve and corresponding to each grayscale; based on the target luminance value of each grayscale and a relationship between grayscale voltage and luminance obtained in advance, obtaining a target grayscale voltage of each grayscale; and adjusting a grayscale voltage of each grayscale to be the target grayscale voltage of the grayscale to thereby achieve Gamma adjustment. By the above method, automatic adjustment of display parameter for the LCD panel can be achieved.

A universal dimming topology is provided for an electronic ballast having an inverter providing an output current across first and second output branches for driving a light source in accordance with a dimming control input signal. A filament voltage control block modulates first and second filament heating switches to provide filament heating voltage across first and second connection terminals associated with the output branches. During a preheat operating mode a control block disables the inverter and provides pulse width modulated control signals to the filament voltage control block to modulate the filament heating switches at a predetermined frequency. During a normal operating mode the control block enables the inverter and provides pulse width modulated control signals to the filament voltage control block to modulate the filament heating switches in accordance with a duty ratio based on a detected output current.

A low offset input circuit and a signal transmission system which can accommodate a high-speed interface and achieve reduction of an offset voltage are provided. An offset voltage compensating circuit block 103 having an input circuit block 108 including an input circuit 104 and an adder-subtractor circuit block 105, switches 108, 109, a detecting circuit block 106, and an adjusting and holding circuit block 107 is provided. To compensate for an offset voltage of the input circuit block 102, an offset voltage of the input circuit block 102 is detected at the detecting circuit block106 by turning on the switches 108, 109, and the detected offset voltage is held in the adjusting and holding circuit block 107, and negative feedback of the held offset voltage to the adder-subtractor circuit block 105 is performed. Thereby, signals Vop, Von having compensated offset voltages are outputted from the input circuit block 102.

The invention discloses an integrated planar supercapacitor and a preparation method thereof. Specifically, a dispersion system containing an active material (graphene, carbon nanotube, conductive polymer, oxide, hydroxide, and the like) and an auxiliary agent serves as printing ink; components such as electrode materials, current collectors, and connectors are prepared on any insulating substratein one step by using a printing method to form the integrated supercapacitor. The obtained modular supercapacitor has the high integration degree, can be combined with printable and wearable electronic devices, contactless chips, and the like to serve as power sources of the printable and wearable electronic devices, the contactless chips, and the like, and has broad market application prospects.

The invention discloses a robot dexterous hand driving module and a control method. The robot dexterous hand driving module comprises a bus interface, a motor driving module and a sensor module; the motor driving circuit comprises a first decoder, a data latching module and a driving chip module; and the sensor module comprises a second decoder, a data transreceiver module and a sensor interface module. The driving module receives external signals to control the motor driving module, and returns sensor module signals to the external so as to drive robot dexterous hands to operate. The data latching module latches information for controlling the motor; the data transreceiver module transmits sensor information; and buses comprise an address bus, a data bus and a control bus, and are used for communicating the driving module with the external. The robot dexterous hand driving module has the characteristics of acquiring information of multiple sensors and driving multiple motors, is simple in structure and convenient for expansion, can satisfy the dexterous hand driving control requirements of multi-degree-of-freedom and multi-finger robots, and is combined with the dexterous hands to be widely applied to the robot industry.

The invention provides a shell body capable of enveloping a plurality of power cells, which comprises: an upper end plate provided with an upper end plate groove with a shape corresponding to the outline of the end face of a power cell; at least one intermediate frame body, which is provided with a hollow structure corresponding to the outline of the power cell; and an lower end plate, which is provided with a lower end plate groove with a shape corresponding to the outline of the end face of the power cell. The shell body reasonably meets the requirements on shell body for power cells such as lithium batteries with soft batteries, and realizes the random adjustment of voltage and capacity. The single cells are clamped tightly to ensure the vacuity so as to reduce the vibration of aluminum-plastic film as well as scrapes and damages, to facilitate and ensure the reliability of the connection between a copper press plate and positive and negative plates and to ensure the stable performance and consistency of the cell.