The invention discloses a low-temperature direct preparation method of graphene under double-temperature-zone control, and a double-temperature-zone tube furnace. The method comprises the steps of dividing a vacuum reaction furnace into a high-temperature zone and a low-temperature zone, putting transition metal into the high-temperature zone, directly putting substrate material into the low-temperature zone, vacuumizing, injecting hydrogen gas into the vacuum reaction furnace, heating the low-temperature zone to 100-1,000 DEG C, heating the high-temperature zone to 1,000-1,100 DEG C, introducing carbon source into the vacuum reaction furnace, cracking the carbon source in the high-temperature zone, and performing chemical vapor deposition (CVD) for 5-180 min in the low-temperature zone while keeping constant hydrogen gas flow, to obtain graphene directly deposited on the substrate. The preparation method has the advantages of simple growth process, no need of catalysis, low growth temperature of 100-1,000 DEG C, no restriction on substrate material, and large-area growth of graphene. The grown graphene has low defect peak, high crystal quality, excellent light transmittance and electrical conductivity.