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Manufacturing method for upconversion luminescent material

A technology of luminescent materials and manufacturing methods, which is applied in the direction of luminescent materials, chemical instruments and methods, metal material coating technology, etc., can solve the problems of insufficient uniformity and dispersion of product particles, high synthesis costs, etc., and achieve improved photoelectric conversion efficiency, Low cost, avoid the effect of deep processing technology

Active Publication Date: 2018-04-03
HANSHAN NORMAL UNIV
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Problems solved by technology

For up-conversion materials, in the existing technology, the method of preparing rare earth-doped up-conversion luminescent materials is based on the use of oxides, carbonates, and hydroxide precursors of yttrium sulfide at high temperatures in a sulfur-containing atmosphere, or pyrolysis of sulfur-containing Single-source rare earth organometallic complexes, in these methods, must be carried out under high temperature conditions, which often leads to insufficient uniformity and dispersion of product particles, high synthesis costs, and cannot be combined with silicon-based solar cell technology

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  • Manufacturing method for upconversion luminescent material

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Embodiment Construction

[0027] like figure 1 As shown, it is a flow chart of the method of the embodiment of the present invention. In the manufacturing method of the up-conversion luminescent material in the embodiment of the present invention, the up-conversion luminescent material is composed of rare earth-doped sulfur oxides formed by the following steps:

[0028] Step 1, providing multi-target magnetron sputtering equipment.

[0029] Step 2, installing a plurality of targets in the co-sputtering reaction chamber of the multi-target magnetron sputtering equipment, the targets are selected according to the rare earth doped sulfur oxide to be formed, including:

[0030] The rare earth doped sulfur oxide host material corresponds to a host rare earth oxide target and a host rare earth sulfide target, and the rare earth doped sulfur oxide rare earth doped material corresponds to a doped rare earth target.

[0031] In the embodiment of the present invention, the oxysulfide host material of the rare e...

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Abstract

The invention discloses a manufacturing method for an upconversion luminescent material. The manufacturing method comprises the following formation steps: step 1, providing a multitarget magnetron sputtering device; step 2, mounting target materials which are selected according to to-be-formed rare earth doped sulfur oxide and comprise a matrix rare earth oxide target and a matrix rare earth sulfide target corresponding to a sulfur oxide matrix material of rare earth doped sulfur oxide, and a doped rare earth target corresponding to a rare earth doped material of the rare earth doped sulfur oxide; step 3, placing a substrate onto a substrate seat of a co-sputtering reaction chamber; step 4, vacuumizing the co-sputtering reaction chamber; and step 5, introducing sputtering gas, and carryingout a sputtering process with a substrate temperature in a range of a room temperature to 400 DEG C so as to form the rare earth doped sulfur oxide on the surface of the substrate. The manufacturingmethod provided by the invention can realize large-area growth of a material at a low temperature, is compatible with a microelectronic technology, has simple process and low cost, and can effectivelycombine with the preparation process of solar cells.

Description

technical field [0001] The invention relates to a manufacturing method of a nano-optoelectronic device material, in particular to a manufacturing method of an up-conversion luminescent material. Background technique [0002] In the process of new energy research, solar energy, as a widely distributed, inexhaustible, inexhaustible and pollution-free green and clean energy, has become the first choice for the sustainable development of human society. Therefore, the research of solar cells that directly convert light energy into electrical energy has become a major subject of major investment and vigorous research and development by countries all over the world. The bandgap of single crystal silicon material at room temperature is 1.1eV, which just falls near the peak of solar radiation, and has a relatively high photoelectric energy conversion efficiency. Therefore, silicon-based solar cells have become one of the most promising materials at present and in the future. [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/84C23C14/35C23C14/08
CPCC09K11/7771C09K11/7789C23C14/08C23C14/083C23C14/352
Inventor 郑桦宋超李桐霞林泽键黄锐王祥郭艳青宋捷
Owner HANSHAN NORMAL UNIV
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