Method for directly preparing graphene on SiO2/Si substrate

A graphene and substrate technology, applied in the field of graphene preparation directly on SiO2/Si substrate, can solve problems such as inability to form graphene, achieve low cost, controllable number of layers, large-area growth, and high strength Effect

Inactive Publication Date: 2013-08-21
WUHAN UNIV
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Problems solved by technology

The above two patents mainly use optimized ion implantation equipment to prepare graphene by cluster carbon ion beam deposition and implantation, but both prepare graphene on the surface of Ni. If the graphene film layer is used for device preparation, Graphene still needs to be transferred to the insulating substrate, and graphene cannot be directly formed on the surface of the insulating substrate

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  • Method for directly preparing graphene on SiO2/Si substrate
  • Method for directly preparing graphene on SiO2/Si substrate
  • Method for directly preparing graphene on SiO2/Si substrate

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preparation example Construction

[0029] figure 1 It simply shows the preparation process of the method of the present invention, which mainly includes three steps. The first step is based on the ion implantation method. 2 / Si substrate is implanted with carbon ions on the M film layer, after annealing treatment in the M / SiO 2 Graphene can be obtained on the upper and lower surfaces of the M film layer of the / Si substrate. Here M represents a transition metal layer. Whether graphene can be obtained on both the upper and lower surfaces of the M film layer depends on the thickness of the M film layer. Graphene can be obtained on both the upper and lower surfaces only when a suitable thickness of the M film layer is set. For each specific transition metal, the appropriate thickness can be obtained through a limited number of experiments.

[0030] The second step is to obtain direct deposition on SiO 2 The graphene on the surface of the / Si substrate needs to be removed from the graphene on the upper surface of the...

Embodiment 1

[0048] Under the condition of the suction voltage of 20keV, the beam intensity and XY scanning voltage of the ion implantation system were adjusted to obtain stable cluster carbon ions with the largest current intensity. Obtain C in this specific embodiment 1 And C 2 Cluster carbon ions, and C 1 And C 2 The cluster carbon ions were respectively implanted on the copper foil with a thickness of 25 μm, and the sample a and the sample b were obtained after annealing treatment. C 1 And C 2 The implantation dose of cluster carbon ions is 8×10 15 atoms / cm 2 , The injection energy is 20keV / atom and 10keV / atom respectively. The annealing process adopted in this embodiment is: keeping at 950°C for 30 minutes, and decreasing to room temperature at a rate of 20-30°C / min.

[0049] Use Raman spectroscopy to characterize samples a and b, see the results image 3 . It can be seen from the figure that the defect peak D of the graphene on sample a is at 1367cm -1 , The characteristic peak G, whic...

Embodiment 2

[0052] Under the condition of the suction voltage of 20keV, the cluster carbon ions are obtained by the ion implantation system, and the cluster carbon ions are implanted into Ni / SiO 2 / Si substrate nickel film surface, the implantation dose of cluster carbon ions is 4×10 16 atoms / cm 2 , Ni / SiO 2 The thickness of the nickel film in the / Si substrate is 300nm, SiO 2 The layer thickness is 300 nm. Ni / SiO for implanting cluster carbon ions 2 / Si substrate is annealed in Ni / SiO 2 To obtain graphene on the Ni film of the / Si substrate, the annealing process used is: hold at 900°C for 50 minutes, and drop to room temperature at a rate of 20°C / min. The Ni / SiO prepared with graphene obtained here 2 The / Si substrate is referred to as sample c for short. Use Raman spectroscopy to characterize sample c, and the obtained Raman spectra are shown in Figure 4 The spectral line in (1). It can be seen from the spectrum (1) that the intensity of the defect peak D peak is very small, and I D / ...

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Abstract

The invention discloses a method for directly preparing graphene on a SiO2 / Si substrate. The method comprises the following steps of: preparing graphene on a transitional metal film of the transitional metal SiO2 / Si substrate by using an ion implantation method; and then sequentially removing the graphene and the transitional metal film from the surface of the transitional metal film, thus obtaining the graphene on the SiO2 / Si substrate. The method is simple and convenient and can be used for directly obtaining the graphene film with low defect level and high quality on the SiO2 / Si substrate.

Description

[0001] technical field [0002] The invention belongs to the technical field of graphene preparation, in particular to a 2 A method for preparing graphene on a Si substrate. Background technique [0003] Graphene is a honeycomb-like two-dimensional crystal formed by a single layer of carbon atoms tightly packed. Due to its various outstanding physical properties, it has good application prospects in various fields of semiconductor materials. Since 2004, Andre Geim et al. from the University of Manchester in the United Kingdom obtained high-quality graphene with a simple "mechanical exfoliation method" and observed the extremely high carrier mobility of graphene. Various graphene preparation technologies have been developed. , such as pyrolysis SiC, chemical vapor deposition, redox method, etc. However, there is still no graphene preparation technology that can grow large-area and high-quality graphene. [0004] Ion implantation is a mature technology for the preparation o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/184
Inventor 尚艳霞黄志宏周霖王泽松付德君
Owner WUHAN UNIV
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