The invention discloses a
low noise amplifier which comprises four p-channel
metal oxide semiconductor (PMOS) tubes, five inductors, four resistors, two capacitors. The four PMOS tubes comprise a PMOS tube B1, a PMOS tube B2, a PMOS tube B3 and a PMOS tube B4. The five inductors comprise an
inductor L1, an
inductor L2, an
inductor L3, an inductor L4 and an inductor L5. The four resistors comprise a
resistor R1, a
resistor R2, a
resistor R3 and a resistor R4. The two capacitors comprise a
capacitor C1 and a
capacitor C2. An input end is connected with one end of the L1 and one end of the R2, the other end of the L1 is connected with a grid
electrode of the B3, and the other end of the R2 is connected with a grid
electrode of the B1. The grid
electrode and a drain electrode of the B1 are connected in a
short circuit mode, and a source electrode of the B1 is in ground connection. Supply
voltage is connected with one end of the R1, one end of L2, one end of the L3 and a grid electrode of the B2, the other end of the R1 is connected with the drain electrode of the B1, the other end of the L2 is connected with a drain electrode of the B2 and a grid electrode of the B4, and the other end of the L3 is connected with a drain electrode of the B4. One end of the R3 is connected with the drain electrode of the B2, the other end of the R3 is connected with a positive electrode of the C1, a negative electrode of the C1 is connected with one end of the L4, and the other end of the L4 is connected with an output end. A positive electrode of the C2 is connected with the drain electrode of the B4, and a negative electrode of the C2 is in ground connection. A source electrode of the B2 is connected with a drain electrode of the B3, a source electrode of the B3 is in ground connection through the L5, and a source electrode of the B4 is in ground connection through the R4. The
low noise amplifier can achieve gains more than 30db, and can obtain a
noise index below 1.5db at the same time.