A method of manufacturing p-n junction in
semiconductor material such that small dimensions of such junctions are maintained, and associated lattice dislocations of such junctions may be preferentially maintained, and devices with such patterned
semiconductor material, is disclosed. Typically, a
neutron moderator is used to slow fast neutrons to thermal energies. A
mask made from thermal
neutron absorbing material, such as
cadmium, is placed in close proximity to such
neutron moderator. Thermal neutron focusing
optics, such as compound refractive lenses, are used to collect and focus thermal neutrons emitted from the
mask such that the pattern or portion of the pattern is transferred to the
silicon body, with neutrons transmitted from the window areas in the
mask and through the neutron optic so as to form the donor
dopant concentration for the n-type regions by transmutation of
silicon atoms into
phosphorus. An electronic device produced by such a method has vertical p-n junctions continuous between both major surfaces and horizontal alternating p-type and n-type regions across most of the face of the material, such that unique properties are achieved.