55 results about "Mosfet circuits" patented technology

Positive logic circuits, systems and methods using MOSFETs operated in a depletion-mode, including electrostatic discharge protection circuits (ESD), non-inverting latches and buffers, and one-to-three transistor static random access memory cells. These novel circuits supplement enhancement-mode MOSFET technology and are also intended to improve the reliability of the complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) products.

Third-order intermodulation products (IM3) are attenuated in RF receivers by providing a typical main signal path and a parallel auxiliary signal path in which the IM3 products are accentuated, and the output from the main signal path is adaptively filtered to attenuate the IM3 products. In one embodiment, a multirate filter bank (MRFB) with asymmetric analysis and synthesis sections is used to detect and isolate the IM3 products. In another embodiment an analog nonlinear term generator is placed at the front of the auxiliary signal path. The analog nonlinear term generator takes advantage of the nonlinearities of a differential MOSFET circuit and a multiplier to extract the IM3 products in the RF input signal. The outputs of the main signal path and the auxiliary signal path are inputs to a complex least mean squares filter to attenuate the IM3 products in the resulting signal.

The invention discloses a digital-analog hybrid neural network chip architecture. The architecture comprises a two-dimensional SRAM module, an analog synaptic circuit, a nerve cell circuit, an AER communication module, and a master control digital unit. The two-dimensional SRAM module is taken as a storage unit of neural network connection relation and a synaptic weight value. The analog synaptic circuit and the nerve cell circuit respectively consist of an MOSFET circuit working in a subthreshold section. The AER communication module serves as the input and output interfaces of a chip, and employs an AER protocol for communication. All control circuits in the architecture are synchronous digital circuits. The architecture is low in power consumption, is high in degree of parallelism, and can achieve a neural network algorithm in a reasonable chip area, wherein the neural network algorithm is more complex in nerve cell functions, is larger in network scale, and is more flexible in connection.

The semiconductor relay comprises: an insulated type DC / DC power supply 10 having the input terminal and the output terminal insulated from each other; a pulse transformer 20 having the input terminal and the output terminal insulated from each other; an analog switch 30 which turns on and off the circuit in accordance with a state of an input signal; and a MOSFET circuit 40 which turns on and off a high voltage to a load 50. When a pulse signal is outputted from a pulse signal source 28, the pulse signal is outputted from the pulse transformer 20, and a state of the analog switch 30 is switched, a supply voltage is outputted from the output terminal of the analog switch 30, both the MOSFETs 42, 44 of the MOSFET circuit conduct, and a high AC voltage is applied to a load 50 from an AC power supply 52. Then, when a pulse signal is outputted from the pulse signal source 28, the pulse signal is outputted from the pulse transformer 20, the state of the analog switch 30 is switched, a ground voltage is outputted from the output terminal of the analog switch 30, both the MOSFETs 42, 44 of the MOSFET circuit are turned off, and the high AC voltage from the AC power supply 52 is not applied to the load 50.

The invention relates to an implementing method of a high-voltage square-wave generator. The generator comprises a high-voltage DC (Direct Current) source, a resistor, an energy storage capacitor, a triggering pulse width adjusting module, a rising edge circuit, a falling edge circuit and a synchronous control triggering module; the rising edge circuit comprises a solid switch MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and an optical coupling isolation driving circuit; the falling edge circuit comprises a solid switch MOSFET circuit and avalanche transistor string; the high-voltage DC source, the resistor, the energy storage capacitor, the triggering pulse width adjusting module, the solid switch MOSFET and the optical coupling isolation driving circuit are connected to the avalanche transistor string in sequence. The implementing method comprises the steps of: (1) pre-charging the energy storage capacitor by the high-voltage DC source; (2) converting an outer triggering signal into a pulse width adjustable square wave signal by the triggering pulse width adjusting module; (3) controlling the optical coupling isolation driving circuit to drive the MOSFET to be in on-state so as to charge a load and form the rising edge circuit; (4) driving the MOSFET and avalanche transistors of the falling edge circuit to be in on-state so as to cut off an output pulse rapidly and form the falling edge circuit.

Devices and methods of forming an integrated circuit (IC) that offer protection against ESD in high voltage (HV) circuit applications are disclosed. A device includes N ones of a field effect transistor (FET) stacked in series to provide an N-level stack, where N is an integer greater than 1. A first pad of the device is coupled to a first FET and a second pad is coupled to an Nth FET. The device also includes a stacked / distributed RC control circuit configured to cause a short circuit between the first pad and the second pad in response to an ESD event. During the ESD event, the RC control circuit is configured to concurrently provide sufficient voltage to control the N ones of the FET by turning them on using parasitic conduction to cause the short circuit.

Embodiments herein present a structure, method, etc. for making high density MOSFET circuits with different height contact lines. The MOSFET circuits comprise a contact line, a first gate layer situated proximate the contact line, and at least one subsequent gate layer situated over the first gate layer. The contact line comprises a height that is less than a combined height of the first gate layer and the subsequent gate layer(s). The MOSFET circuits further comprise gate spacers situated proximate the gate layers and a single contact line spacer situated proximate the contact line. The gate spacers are taller and thicker than the contact line spacer.

Embodiments herein present a structure, method, etc. for making high density MOSFET circuits with different height contact lines. The MOSFET circuits comprise a contact line, a first gate layer situated proximate the contact line, and at least one subsequent gate layer situated over the first gate layer. The contact line comprises a height that is less than a combined height of the first gate layer and the subsequent gate layer(s). The MOSFET circuits further comprise gate spacers situated proximate the gate layers and a single contact line spacer situated proximate the contact line. The gate spacers are taller and thicker than the contact line spacer.

The invention provides an MOSFET-based low-field nuclear magnetic resonance Q converting circuit. The converting circuit comprises a resonance circuit, a converting circuit, a duplexer, a first controller and a second controller. The resonance circuit comprises a tuning capacitor and an inductor which is parallel connected with the tuning capacitor. The converting circuit comprises an MOSFET circuit and a power resistor which is serially connected with the MOSFET circuit. The converting circuit is parallel connected with the resonance circuit so that a parallel network is formed. The duplexer is serially connected with the parallel network. The first controller is connected with the duplexer. The second controller is connected with the MOSFET circuit. By controlling on or off of the MOSFET circuit, a single antenna is allowed to work in a high Q-value state when a radio frequency signal is sent and a nuclear magnetic resonance signal is received, and during discharging of energy of the resonance circuit, the signal antenna works in a low Q-value state, so restoration time constant and restoration time of the single antenna are reduced, and detection precision for the nuclear magnetic resonance signal by the low-field nuclear magnetic resonance device and sensitivity of the nuclear magnetic resonance device are improved.

A high-voltage high-current control circuit applied to a high-voltage power MOSFET (metal-oxide-semiconductor field effect transistor) circuit comprises a PMOS (P-channel metal oxide semiconductor) tube MP1, a PMOS tube MP2, a PMOS tube MP3, a triode Q1, a triode Q2, an MOSFET tube M1, an MOSFET tube M2, a resistor R1 and a resistor R2, wherein the MP1, the MP2 and the MP3 share a grid electrode; the source electrodes of the MP1, the MP2 and the MP3 are connected with a VDD; the drain electrodes of the MP2 and the MP3 are connected with the collector electrodes of the Q1 and the Q2 respectively; the base electrodes of the Q1 and the Q2 are connected with each other; the emitting electrodes of the Q1 and the Q2 are connected with the R1 and the R2 respectively; the M1 and the M2 share a grid electrode and share a drain electrode; the source electrode of the M1 is connected with the R1; the source electrode of the M2, the R1 and the R2 are grounded; the Q1 is matched with the Q2; the R1 and the R2 are resistors matched with each other according to a proportional relation; the width-to-length ratio of the M1 is proportional to that of the M2. The high-voltage high-current control circuit does not consider a channel length modulation effect of a transistor, introduces a negative feedback by the R1 and converts high current into a current comparison signal, thus achieving precise control over the current in a high-voltage high-current mode.

The invention relates to a motor driver based on a ZYNQ dual-core processor and belongs to the technical field of circuit control. The motor driver comprises a DC motor control chip, a DC motor, a ZYNQ dual-core processor, a photocoupler and a MOSFET driving circuit. The ZYNQ dual-core processor calculates collected motor task state information and control instruction information to obtain a PWM control signal. The optocoupler isolates the PWM control signal to generate an isolated signal and outputs the isolated signal to the DC motor control chip. The DC motor control chip receives the isolated signal, then generates a signal for driving a MOSFET circuit and outputs the signal to the MOSFET driving circuit to control the on and off of a MOSFET tube. The MOSFET driving circuit receives the signal for controlling the on and off of the MOSFET tube and driving the MOSFET circuit and drives the DC motor to rotor by the on and off of the MOSFET driving circuit. The motor driver is based onthe ZYNQ dual-core processor, the number of processors and system size are reduced, and the hardware design is simplified.

The invention discloses a high-low edge drive output circuit of a finished automobile controller of a pure electric automobile. The high-low edge drive output circuit of the finished automobile controller of the pure electric automobile comprises a high-low edge drive output module, an MCU control unit and a CAN drive module, wherein the MCU control unit and the CAN drive module are connected withthe high-low edge drive output module, the high-low edge drive output module comprises a high edge drive output module and a low edge drive output module, the high edge drive output module comprisesa high edge drive circuit and a high edge output MOSFET circuit, the MCU control unit is connected with the high edge drive circuit through an SPI1 bus, and the MCU control unit is connected with thelow edge drive output module through an SPI2 bus. The high-low edge drive output circuit of the finished automobile controller of the pure electric automobile has the advantages that the structure issimple, the operation is convenient, by changing the high-low edge drive output circuit into an intelligent power IC circuit driven by the bus, the high-low edge drive output module has a diagnostic function, the number of circuit board chips is greatly reduced, the area of a circuit board is reduced, the cost is reduced, the safety of a finished automobile is improved, and the high-low edge driveoutput circuit cooperates with a finished automobile control application control strategy to achieve fault prognosis, fault diagnosis and accurate fault location.

The invention relates to the technical field of electric welding machines, in particular to an electric welding machine circuit powered by lithium batteries. The electric welding machine circuit powered by the lithium batteries comprises an intelligent voltage judging circuit, metallic-oxide semiconductor field effect transistors, insulated gate bipolar transistors, electric relays, electrolytic capacitors, a transformer and an output rectifying circuit; an input end of the intelligent voltage judging circuit is connected with an input power source; a control signal output end of the intelligent voltage judging circuit is connected with the two ends of a first electric relay coil and the two ends of a second electric relay coil in two ways; and a normally open contact of the first electric relay is connected with the input power source. Compared with the prior art, dual voltage, DC 48 V and AC 220V, power supply can be conducted, an input voltage can be judged intelligently, the purpose that the electric welding machine can be used in the areas without a power grid is realized, the work efficiency of the electric welding machine is improved, and the electric welding machine can be powered while being used; and in addition, a full-bridge MOSFET circuit is adopted in the direct current part, so that electric current controllability is better, and efficiency is higher.

A high frequency switch circuit including: a first rectifier circuit including at least one rectifier element having one end connected between the gate terminal of a first MOSFET circuit and a first control terminal and the other end connected to ground, and a second rectifier circuit including at least one rectifier element having one end connected between the gate terminal of a second MOSFET circuit and a second control terminal and the other end connected to ground. The circuit further includes a connecting section connecting the forward-current input terminal side of at least one of the rectifier elements of the first rectifier circuit and one of the main terminal sides of the first MOSFET circuit, and connecting the forward-current input terminal side of at least one of the rectifier elements of the second rectifier circuit and one of the main terminal sides of the second MOSFET circuit.

The invention discloses a brush and brushless compatible two-way servo control system, comprising a robot movement mechanism, a two-way power MOSFET circuit, a DSP circuit and a direct current power supply. One end of the two-way power MOSFET circuit is connected with the DSP circuit, and the other end is connected with the robot movement mechanism. A servo motor current collection circuit, a protection circuit and a gate level drive circuit are arranged on the two-way power MOSFET circuit. The robot movement mechanism and the servo motor current collection circuit are in two-way connection. A QEP circuit, an SCI circuit, a PWM circuit and other interface circuits are arranged on the DSP circuit. The robot movement mechanism is connected with the QEP circuit through a coder. The servo motor current collection circuit is connected with the DSP circuit through a high-speed and high-precision AD sampling circuit. The direct current power supply is connected with a voltage division circuit. The system is brush and brushless compatible. The problem of lacking a two-way brushless motor controller and a two-way brush motor controller in the market is solved.

The invention belongs to the technical field of switching power supply protection, and relates to a power supply detecting and switching device for an electric energy meter. The power supply detectingand switching device comprises an MCU chip unit, an auxiliary power circuit unit, a main power circuit unit, a power-off meter-reading battery circuit unit, a clock battery circuit unit, a DC / DC circuit unit, a dummy load circuit unit, a first voltage detecting circuit unit, a second voltage detecting circuit unit, a first P-channel MOSFET circuit unit, and a second P-channel MOSFET circuit unit.A power supply detects whether the first voltage detecting circuit unit, the second voltage detecting circuit unit and the DC / DC circuit unit are powered on. The MCU chip unit detects the levels of the first voltage detecting circuit unit, the second voltage detecting circuit unit and the DC / DC circuit unit. When the main power circuit unit is powered off, the power supply automatically switchesto the power-off meter-reading battery circuit unit, and the MCU chip unit is in a low-power mode. When the power-off meter-reading battery circuit unit has no power, the power supply automatically switches to the clock battery circuit unit for power supply.

A disclosed oscillation circuit includes a constant-voltage generation circuit, an oscillation generation circuit configured to generate an oscillation output, an output circuit including a plurality of parallelly arranged MOSFET circuits, to which a constant voltage generated by the constant-voltage generation circuit is supplied as a supply voltage, output points of the plurality of MOSFET circuits being mutually connected, and a drive circuit configured to drive a selected MOSFET circuit selected in response to a selection input among the plurality of MOSFET circuits by the oscillation output, wherein an output from an unselected MOSFET circuit among the plurality of MOSFET circuits other than the selected MOSFET circuits has a high impedance.

Positive logic circuits, systems and methods using MOSFETs operated in a depletion-mode, including electrostatic discharge protection circuits (ESD), non-inverting latches and buffers, and one-to-three transistor static random access memory cells. These novel circuits supplement enhancement-mode MOSFET technology and are also intended to improve the reliability of the complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) products.

The invention relates to a RC-stacked MOSFET circuit for high voltage (HV) electrostatic discharge (ESD) protection. Devices and methods of forming an integrated circuit (IC) that offer protection against ESD in high voltage (HV) circuit applications are disclosed. A device includes N ones of a field effect transistor (FET) stacked in series to provide an N-level stack, where N is an integer greater than 1. A first pad of the device is coupled to a first FET and a second pad is coupled to an Nth FET. The device also includes a stacked / distributed RC control circuit configured to cause a short circuit between the first pad and the second pad in response to an ESD event. During the ESD event, the RC control circuit is configured to concurrently provide sufficient voltage to control the N ones of the FET by turning them on using parasitic conduction to cause the short circuit.

The invention discloses a MOSFET circuit structure for a motor controller of a battery electric vehicle. The MOSFET circuit structure comprises a control PCB and a driving PCB, wherein the control PCBis suspended above the driving PCB by virtue of at least three pin headers, at least two rows of power pipes are inversely mounted on the lower surface of the driving PCB board, the heat dissipationsurfaces of each row of power pipes are mounted on the side surface of a heat conduction block, and the bottom of the heat conduction block is mounted on a heat dissipation base plate. The MOSFET circuit structure has the advantages that the utilized space is small, and the heat dissipation effect is good.

The embodiment of the invention provides a groove type MOSFET circuit model based on a physical structure and an establishment method thereof, and the model comprises a voltage control voltage source, a first MOSFET, a second MOSFET, a first resistor, a second resistor, a first capacitor, a second capacitor, and a diode. According to the technical scheme provided by the invention, the SPICE macro model which is high in precision and high in speed and accords with physical characteristics of the device is realized on the basis of parameter fitting of a current and voltage equation and in combination with an SPICE simulation technology, the model is suitable for a groove type MOSFET device and is compatible with various SPICE simulators, the simulation precision and speed are improved, and the design period of a power supply device is shortened.

The semiconductor relay comprises: an insulated type DC / DC power supply 10 having the input terminal and the output terminal insulated from each other; a pulse transformer 20 having the input terminal and the output terminal insulated from each other; an analog switch 30 which turns on and off the circuit in accordance with a state of an input signal; and a MOSFET circuit 40 which turns on and off a high voltage to a load 50. When a pulse signal is outputted from a pulse signal source 28, the pulse signal is outputted from the pulse transformer 20, and a state of the analog switch 30 is switched, a supply voltage is outputted from the output terminal of the analog switch 30, both the MOSFETs 42, 44 of the MOSFET circuit conduct, and a high AC voltage is applied to a load 50 from an AC power supply 52. Then, when a pulse signal is outputted from the pulse signal source 28, the pulse signal is outputted from the pulse transformer 20, the state of the analog switch 30 is switched, a ground voltage is outputted from the output terminal of the analog switch 30, both the MOSFETs 42, 44 of the MOSFET circuit are turned off, and the high AC voltage from the AC power supply 52 is not applied to the load 50.

A MOSFET pre-driver circuit with highly adjustable drive current for a high frequency switching power MOSFET circuit decreases the peak of the drive current and power loss of the pre-driver while maintaining power loss of the power stage so that total power loss is decreased and circuit efficiency is increased. A resistor arranged in series with a source of the MOSFET of the pre-driver circuit is provided to adjust the drive current.

The invention discloses a switching circuit, a switching method and medical equipment, and the switching circuit comprises a latching relay circuit, a first MOSFET circuit and a second MOSFET circuit; the switching circuit realizes on and off of an electromagnetic coil in the latching relay through receiving a control level, the on and off of the electromagnetic coil in the latching relay can realize the switch of an switch of the latching relay between a normally open contact and a normally close contact, so that the on and off between a power supply and a load is realized; the control level has no need to be in a persistent state, the contactor state of the relay is maintained by the machine, and the power consumption is greatly reduced; According to the invention, a contact of the latching relay and a control coil are completely independent, the electric discharge range of an input power is not limited by a main loop, the stability and efficiency of the switching circuit are improved, battery life of battery power supply equipment is prolonged, and the user experience is improved.

The invention discloses an LED drive circuit capable of independently controlling illumination and visible light communication. The LED drive circuit comprises a direct-current power supply; a currenttype BUCK circuit used for converting a direct current power supply of a voltage source into a direct current source with controllable and adjustable current amplitude; a parallel MOSFET dimming circuit connected used for realizing PWM dimming of an LED array for illumination dimming under control of the MCU main control circuit; an LED array for illumination and dimming; an optical communicationmodulation MOSFET circuit used for realizing a high-speed modulation function of a transmission signal under control of an optocoupler isolation driving circuit; an LED array for optical communication modulation; a MCU main control circuit used for collecting the current of the current type BUCK circuit, obtaining an external given signal, generating a pulse width modulation control signal for controlling the parallel MOSFET dimming circuit through the PWM generator, and obtaining a high-speed VPPM signal needing to be transmitted to be output; and the optocoupler isolation driving circuit connected with the MCU main control circuit.

There is provided a DC offset cancellation circuit including: a capacitor circuit unit including at least one capacitor connected between an input terminal and an input of an amplifier; a MOSFET circuit unit including a plurality of MOSFETs connected in series between a first connection node connected to a predetermined one of both terminals of the capacitor circuit unit and a ground and operating in a linear region; and a switching circuit unit including a plurality of switch elements for selecting several MOSFETs previously selected from among the plurality of MOSFETs of the MOSFET circuit unit, respectively.

The invention relates to a low-voltage high-power driving circuit for servo motor control. The low-voltage high-power driving circuit comprises a signal isolation circuit, a gate driving circuit and an MOSFET circuit; PWM signals are connected into the input end of the signal isolation circuit; the output end of the signal isolation circuit is connected with the input end of the gate driving circuit; the output end of the gate driving circuit is connected with the input end of the MOSFET circuit; the output end of the MOSFET circuit is connected with a servo motor; and the servo motor can be driven through controlling the MOSFET circuit. According to the low-voltage high-power driving circuit for servo motor control of the invention, an MOSFET is applied to the high power field. With the power driving circuit adopted, the miniaturization, light weight and low power consumption of a servo driver can be realized, so that the requirements of the driver, for a power switching device, can be satisfied.