Groove type MOSFET circuit model based on physical structure and establishment method thereof

Abstract

The embodiment of the invention provides a groove type MOSFET circuit model based on a physical structure and an establishment method thereof, and the model comprises a voltage control voltage source, a first MOSFET, a second MOSFET, a first resistor, a second resistor, a first capacitor, a second capacitor, and a diode. According to the technical scheme provided by the invention, the SPICE macro model which is high in precision and high in speed and accords with physical characteristics of the device is realized on the basis of parameter fitting of a current and voltage equation and in combination with an SPICE simulation technology, the model is suitable for a groove type MOSFET device and is compatible with various SPICE simulators, the simulation precision and speed are improved, and the design period of a power supply device is shortened.

Description

technical field [0001] The embodiments of the present application belong to the field of modeling and simulation of conductor devices, and specifically relate to a physical structure-based trench MOSFET circuit model and a method for establishing the same. Background technique [0002] In recent years, trench MOSFETs have been widely used in circuits such as circuit output interfaces, LCD drivers, and power management. While withstand voltage during the period, the cost is greatly reduced. It is a key and basic product for the transformation of power electronics from low frequency to high frequency and the breakthrough of power frequency conversion. The widespread use of trench MOSFETs makes more and more VLSI design simulations require accurate transistor models. [0003] The industry adopts the following two methods for modeling power MOSFETs: (1) use the Berkeley Short-Channel Insulated Gate Field-Effect Transistor Model (BSIM) to model the device; (2) construct a macro ...

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Problems solved by technology

[0004] At present, the most widely used BSIM model in the power device industry, although its accuracy is higher than SPICE3, its simulation modeling difficulty is greatly increased, which brings many disadvantages to the modeling work

The macro model based on SPICE3 can achieve faster modeling while ensuring a certain accuracy, and it is more convenient for circuit simulation and use, but it lacks the reflection of physical structure parameters, and it is difficult to ensure the self-consistency of device characteristics

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