Groove type MOSFET circuit model based on physical structure and establishment method thereof

A technology of circuit model and physical structure, applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., can solve the problems of lack of physical structure parameters, difficulty in ensuring self-consistency of device characteristics, and difficulty in simulation modeling

Pending Publication Date: 2021-06-04
WILL SEMICON (SHANGHAI) CO LTD
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  • Abstract
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Problems solved by technology

[0004] At present, the most widely used BSIM model in the power device industry, although its accuracy is higher than SPICE3, its simulation modeling difficulty is greatly increased, which brings many disadvantages to the modeling work
The macro model based on SPICE3 can achieve faster modeling while ensuring a certain accuracy, and it is more convenient for circuit simulation and use, but it lacks the reflection of physical structure parameters, and it is difficult to ensure the self-consistency of device characteristics

Method used

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  • Groove type MOSFET circuit model based on physical structure and establishment method thereof
  • Groove type MOSFET circuit model based on physical structure and establishment method thereof
  • Groove type MOSFET circuit model based on physical structure and establishment method thereof

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Embodiment Construction

[0041] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is an embodiment of a part of the application, but not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the scope of protection of this application.

[0042] Such as figure 1 As shown, the embodiment of the present invention provides a trench MOSFET circuit model based on a physical structure, including a voltage control voltage source 03, a first MOSFET 01, a second MOSFET 02, a first resistor 08, a second resistor 04, The first capacitor 06, the second capacitor 05 and the diode 07;

[0043] The ...

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Abstract

The embodiment of the invention provides a groove type MOSFET circuit model based on a physical structure and an establishment method thereof, and the model comprises a voltage control voltage source, a first MOSFET, a second MOSFET, a first resistor, a second resistor, a first capacitor, a second capacitor, and a diode. According to the technical scheme provided by the invention, the SPICE macro model which is high in precision and high in speed and accords with physical characteristics of the device is realized on the basis of parameter fitting of a current and voltage equation and in combination with an SPICE simulation technology, the model is suitable for a groove type MOSFET device and is compatible with various SPICE simulators, the simulation precision and speed are improved, and the design period of a power supply device is shortened.

Description

technical field [0001] The embodiments of the present application belong to the field of modeling and simulation of conductor devices, and specifically relate to a physical structure-based trench MOSFET circuit model and a method for establishing the same. Background technique [0002] In recent years, trench MOSFETs have been widely used in circuits such as circuit output interfaces, LCD drivers, and power management. While withstand voltage during the period, the cost is greatly reduced. It is a key and basic product for the transformation of power electronics from low frequency to high frequency and the breakthrough of power frequency conversion. The widespread use of trench MOSFETs makes more and more VLSI design simulations require accurate transistor models. [0003] The industry adopts the following two methods for modeling power MOSFETs: (1) use the Berkeley Short-Channel Insulated Gate Field-Effect Transistor Model (BSIM) to model the device; (2) construct a macro ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/367
CPCG06F30/367
Inventor 方镇东诸舜杰钟添宾
Owner WILL SEMICON (SHANGHAI) CO LTD
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