51 results about "Molecular Fluorine" patented technology

A sub-310 nm lithography radiation source includes first and second beam generating modules for generating first and second pulsed beams, a beam combiner optic for producing a single combined beam from the first and second pulsed beams, and optics for directing each of the first and second pulsed beams to be incident upon the beam combiner.

The lifetime of optical components used in deep-UV (DUV) excimer laser systems, including systems in a MOPA configuration, can be increased by reducing the intensity of pulses incident upon these components. In one approach, an output pulse can be “stretched” in order to reduce the peak power of the pulse. A pulse stretching component can be used, which can be mounted outside the laser enclosure with a horizontal beam path in order to provide a delay line with a minimum impact on the laser system footprint. The horizontal beam path also can minimize the number of optical components in the arm containing the high power beam. A beamsplitting prism can be used with the delay line to avoid the rapid degradation of coatings otherwise exposed to intense UV beams. The prism can expand the beam in the delay line in order to minimize beam intensity and losses due to reflection.

A Master Oscillator (MO)—Power Amplifier (PA) configuration (MOPA) can be used advantageously in an excimer laser system for micro-lithography applications, where semiconductor manufacturers demand powers of 40 W or more in order to support the throughput requirements of advanced lithography scanner systems. The timing of discharges in discharge chambers of the MO and PA can be precisely controlled using a common pulser to drive the respective chambers. The timing of the discharges further can be controlled through the timing of the pre-ionization in the chambers, or through control of the reset current in the final compression stages of the pulser. A common pulser, or separate pulser circuits, also can be actively controlled in time using a feedback loop, with precision timing being achieved through control of the pre-ionization in each individual discharge chamber. Yet another system provides for real-time compensation of time delay jitter of discharge pulses in the chambers.

An oscillator-amplifier gas discharge laser system and method is disclosed which may comprise a first laser unit which may comprise a first discharge region which may contain an excimer or molecular fluorine lasing gas medium; a first pair of electrodes defining the first discharge region containing the lasing gas medium, a line narrowing unit for narrowing a spectral bandwidth of output laser light pulse beam pulses produced in said first discharge region; a second laser unit which may comprise a second discharge chamber which may contain an excimer or molecular fluorine lasing gas medium; a second pair of electrodes defining the second discharge region containing the lasing gas medium; a pulse power system providing electrical pulses to the first pair of electrodes and to the second pair of electrodes producing gas discharges in the lasing gas medium between the respective first and second pair of electrodes, and laser parameter control mechanism modifying a selected parameter of a selected laser output light pulse beam pulse produced by said gas discharge laser system by controlling the timing of the occurrence of the gas discharge between the first pair of electrodes and the occurrence of the gas discharge between the second pair of electrodes.

Molecular fluorine may be generated and distributed on-site at a fabrication facility. A molecular fluorine generator may come in a variety of sizes to fit better the needs of the particular fabrication facility. The generator may service one process tool, a plurality of process tool along a process bay, the entire fabrication facility, or nearly any other configuration within the facility. The process can obviate the need and inherent risks with transporting or handling gas cylinders. The process can be used in conjunction with a cleaning or fabrication operation used in the electronics fabrication industry.

Output beam parameters of a gas discharge laser are stabilized by maintaining a molecular fluorine component at a predetermined partial pressure using a gas supply unit and a processor. The molecular fluorine is subject to depletion within the discharge chamber. Gas injections including molecular fluorine can increase the partial pressure of molecular fluorine by a selected amount. The injections can be performed at selected intervals to maintain the constituent gas substantially at the initial partial pressure. The amount per injection and / or the interval between injections can be varied, based on factors such as driving voltage and a calculated amount of molecular fluorine in the discharge chamber. The driving voltage can be in one of multiple driving voltage ranges that are adjusted based on system aging. Within each range, gas injections and gas replacements can be performed based on, for example, total applied electrical energy or time / pulse count.

A line-narrowed excimer or molecular fluorine laser system includes a discharge chamber filled with a gas mixture at least including molecular fluorine and a buffer gas, multiple electrodes within the discharge chamber connected to a discharge circuit for energizing the gas mixture, a resonator including a pair of resonator reflecting surfaces disposed on either side of the discharge chamber for generating a laser beam, and a line-narrowing / selection unit within the resonator for narrowing the bandwidth of the laser beam. The resonator further includes a third reflecting surface which is deformable and disposed between the pair of resonator reflecting surfaces. The line-narrowing / selection unit preferably includes a beam expander and a dispersive element, wherein the deformable third reflecting surface is disposed between the beam expander and the dispersive element.

The lifetime of optical components used in deep-UV (DUV) excimer laser systems, including systems in a MOPA configuration, can be increased by reducing the intensity of pulses incident upon these components. In one approach, an output pulse can be “stretched” in order to reduce the peak power of the pulse. A pulse stretching component can be used, which can be mounted outside the laser enclosure with a horizontal beam path in order to provide a delay line with a minimum impact on the laser system footprint. The horizontal beam path also can minimize the number of optical components in the arm containing the high power beam. A beamsplitting prism can be used with the delay line to avoid the rapid degradation of coatings otherwise exposed to intense UV beams. The prism can expand the beam in the delay line in order to minimize beam intensity and losses due to reflection.

A process for removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F2) as the principal precursor reagent. In one embodiment a portion of the molecular fluorine is decomposed in a plasma to produce atomic fluorine, and the resulting mixture of atomic fluorine and molecular fluorine is supplied to the chamber whose interior is to be cleaned. In another embodiment the molecular fluorine gas cleans the semiconductor process chamber without any plasma excitation. Molecular fluorine gas has the advantage of not being a global warming gas, unlike fluorine-containing gas compounds conventionally used for chamber cleaning such as NF3, C2F6 and SF6.

A method and gas replenishment algorithm for excimer and molecular fluorine lasers is based on parameters upon which gas aging more closely depends than pulse count, such as input energy to the electrical discharge, and also preferably time. A burst control method and algorithm includes measuring the energies of initial pulses of a first burst occurring after a long burst break, calculating values of input voltages for the initial pulses that would bring output energies of the individual laser pulses or groups of pulses to substantially the same values, and applying the calculated voltages in a subsequent first burst after a long burst break to achieve substantially same predetermined output energy values for the pulses or groups of pulses. Similar operations may be performed for one or more subsequent bursts following the first burst. The values for the first burst may be maintained in a first table of input voltage values to be read by a processor which signals a power supply circuit to apply the voltages according to the voltage values in the table. The values for subsequent bursts may be maintained in a second table, and a third table, etc. A final table such as the third table may be used for all subsequent bursts until another long burst break again occurs, after which the first table is again used for the first burst following the long burst break.

<heading lvl="0">Abstract of Disclosure< / heading> A process for removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F2) as the principal precursor reagent. In one embodiment a portion of the molecular fluorine is decomposed in a plasma to produce atomic fluorine, and the resulting mixture of atomic fluorine and molecular fluorine is supplied to the chamber whose interior is to be cleaned. In another embodiment the molecular fluorine gas cleans the semiconductor process chamber without any plasma excitation. Molecular fluorine gas has the advantage of not being a global warming gas, unlike fluorine-containing gas compounds conventionally used for chamber cleaning such as NF3, C2F6 and SF6.

Improved methods of removing tungsten film from the interior reactor and reactor component surfaces between tungsten deposition operations are provided. The methods involve increasing the availability of molecular fluorine to remove tungsten from the reactor while maintaining fast removal rates. Certain embodiments involve a multi-stage process including a stage in which atomic fluorine is introduced at a low pressure (e.g., about 8 Torr or less) and a stage in which molecular fluorine is introduced or allowed to form in the chamber at high pressure (e.g., about 8 Torr or higher).

The stability of a gas discharge in an excimer or molecular fluorine laser system can be improved by generating multiple discharge pulses in the resonator chamber, instead of a single discharge pulse. Each of these discharges can be optimized in both energy transfer and efficient coupling to the gas. The timing of each discharge can be controlled using, for example, a common pulser component along with appropriate circuitry to provide energy pulses to each of a plurality of segmented main discharge electrodes. Applying the energy to the segmented electrodes rather than to a standard discharge electrode pair allows for an optimization of the temporal shape of the resulting superimposed laser pulse. The optimized shape and higher stability can allow the laser system to operate at higher repetition rates, while minimizing the damage to system and / or downstream optics.

In a line-narrowed gas laser system such as a line-narrowed molecular fluorine laser system, ASE is cut off to obtain a spectral linewidth of 0.2 pm or lower and a spectral purity of 0.5 pm or lower. The laser system comprises a laser chamber filled with an F2-containing laser gas, discharge electrodes located in the laser chamber, a laser resonator and a line-narrowing module located in the laser resonator with a wavelength selection element, so that a line-narrowed laser beam emerges from the laser resonator. To cut off ASE from the laser beam emerging from the laser resonator, the duration from laser emission by discharge to generation of a laser beam is preset. Rise of the sidelight is made so gentle that the starting point of a laser pulse can exist after the time of the first sidelight peak.

The invention relates to a method for preparing a fluorine-containing polymer by using a mixed fluorine-containing surfactant. The method comprises the following steps of: performing homopolymerization or copolymerization by using a fluorine-containing olefin monomer or performing copolymerization on the fluorine-containing olefin monomer and the fluorine-fee olefin monomer under the effect of an initiator; adding 0.01-1% of mixed fluorine-containing surfactant to the reaction system, wherein the fluorine-containing surfactant is combined by a molecular weight fluorine-containing surfactant [Rf-(O)m-Rf'-COO]nAn+ and high molecular fluorine-containing surfactant [CF2=CF-(O)p-Rf1-(O)q-Rf2-COO]nAn+ containing unsaturated bonds. Without perfluoro caprylic acid as a dispersant, the method is high in safety and easy to control polymerization conditions, so that the environmental pollution by perfluoro caprylic acid is avoided, and the product system is good in stability and uniform in grain shape.

An excimer or molecular fluorine laser system includes a discharge chamber filled with a laser gas mixture at least including a halogen-containing molecular species and a buffer gas, multiple electrodes within the discharge chamber connected to a discharge circuit for energizing the gas mixture, and a resonator for generating a laser beam including an optical component made of MgF2. The optical component made of MgF2 has been previously cleaved along a predetermined plane, such that the refractive indices of the birefringent MgF2 material for orthogonal polarization components of the beam are either at least approximately equal so that the polarization of the beam due to the influence of the birefringent nature of the MgF2 material is not substantially reduced, or are approximately maximum so that at least a portion of one of the components is rejected by the resonator so that the polarization of the beam is increased due to the birefringent nature of the MgF2.

<heading lvl="0">Abstract of Disclosure< / heading> A process for selectively etching silicon from a workpiece without etching silicon oxide or silicon nitride. The principal etchant gas is molecular fluorine gas (F2) that is not excited to a plasma state.

Method and system for providing an excimer or molecular fluorine laser including a laser tube filled with a laser gas surrounded by an optical resonator, where the laser tube has multiple electrodes including a pair of main discharge electrodes connected to a discharge circuit for exciting the laser gas to produce a laser output beam. The discharge circuit has an all solid state switch and preferably does not include a transformer. The solid state switch includes multiple solid state devices that may be capable of switching voltages in excess of 12 kV, such as 14-32 kV or more, or the voltage needed to switch the laser. The series of switches has a rise time of approximately less than 300 ns, and preferably around 100 ns or less. The switch may be capable of switching voltages of slightly more than half, but less than the entire voltage needed to produce laser pulses of desired energies, and a voltage doubling circuit may be used to produce the voltage required to produce the desired output pulse energies. An oscillator-amplifier configuration may be used, wherein an oscillator switch may be capable of switching voltages less than the entire voltage needed to produce the desired laser pulse energies, while the amplifier amplifies the pulses to the desired pulse energies.

An imaging member has a crosslinked overcoat layer which holds fluorinated nanoparticles. The overcoat layer is formed from an overcoat solution comprising a polymer binder; a hole transport molecule; fluorinated nanoparticles; a fluorinated surfactant; a crosslinking agent; and a free radical initiator. The overcoat layer provides excellent wear resistance at a low cost.

The invention relates to a self-cleaning anti-reflection film and a preparation method thereof, belongs to the field of novel materials and particularly belongs to the field of self-cleaning optical materials. The preparation method disclosed by the invention comprises the steps of firstly preparing small particle silicon dioxide alkaline nano-particle sol and performing spin coating in two steps by controlling spin coating rotational speed so as to simply and controllably obtain a two-stage micro-surface rough structure required by the self-cleaning anti-reflection film; performing fluorination modification by taking a small molecular fluorine-containing compound as a modifier and taking polymethyl methacrylate with excellent film-forming performance and light transmission as a film-forming solution so as to prepare the self-cleaning anti-reflection film. The obtained anti-reflection film can achieve super non-wetting self-cleaning high standard, integrate excellent light transmittance and well realize high light transmittance and hydrophobic and oleophobic balance. The preparation method provided by the invention has the advantages of simple process, easiness in control, strong weathering resistance, good stability and very high industrialization value.

A beam parameter monitoring unit for coupling with an excimer or molecular fluorine (F2) laser resonator that produces an output beam having a wavelength below 200 nm includes an on-line laser pulse energy detector. This, in turn, allows output pulse energy stabilization to the same degree of accuracy, which is crucial for stability of exposure dose and other process parameters in microlithography and industrial applications.

A method and apparatus is provided for stabilizing output beam parameters of a gas discharge laser by maintaining a molecular fluorine component of the laser gas mixture at a predetermined partial pressure using a gas supply unit and a processor. The molecular fluorine is provided at an initial partial pressure and is subject to depletion within the laser discharge chamber. Injections of gas including molecular fluorine are performed each to increase the partial pressure of molecular fluorine by a selected amount in the laser chamber preferably less than 0.2 mbar per injection, or 7% of an amount of F2 already within the laser chamber. A number of successive injections may be performed at selected intervals to maintain the constituent gas substantially at the initial partial pressure for maintaining stable output beam parameters. The amount per injection and / or the interval between injections may be varied based on the measured value of the driving voltage and / or a calculated amount of the molecular fluorine in the discharge chamber. The driving voltage is preferably determined to be in one of multiple driving voltage ranges that are adjusted based on the aging of the system. Within each range, gas injections and gas replacements are preferably performed based on total applied electrical energy to the discharge and / or alternatively, on time and / or pulse count.

The invention belongs to the field of high molecular fluorine-containing materials, which relates to a fluorine-containing polymer and a preparation method thereof. The fluorine-containing polymer is polymerized of modified monomer units and polymerized monomer units, wherein each modified monomer is a perfluoroalkyl ether monomer containing fluorinated olefin or a perfluorinated oxygen heterocyclic monomer; and the molar ratio of the content of the modified monomer units to the content of all the monomer units is (0.01-10):100. In the preparation method, suspension polymerization or mixed phase polymerization or emulsion polymerization is adopted. The fluorine resin obtained by the preparation method is high in transparency and has excellent tensile strength, heat resistance and weather resistance. Thus, the fluorine-containing polymer is particularly suitable for architectural and agricultural greenhouse film materials as well as optical fiber and solar battery protection materials.

A beam parameter monitoring unit for coupling with a molecular fluorine (F2) or ArF laser resonator that produces an output beam having a wavelength below 200 nm includes a detector and a beam path enclosure. The unit may also include a beam splitter within the enclosure for separating the output beam into first and second components, or first and second beam are attained by other means. The detector measures at least one optical parameter of the second component of the output beam. The beam path enclosure includes one or more ports for purging the beam path enclosure with an inert gas to maintain the enclosure substantially free of sub-200 nm photoabsorbing species. An optical path of the second component of the output beam through the enclosure from the laser resonator to the detector is substantially free of ssub-200 nm photoabsorbing species so that the second beam component reaches the detector without substantial attenuation from the photoabsorbing species, while the first component is used for processing a workpiece.

A beam delivery unit and method of delivering a laser beam from a laser light source for excimer or molecular fluorine gas discharge laser systems in the DUV and smaller wavelengths is disclosed, which may comprise: a beam delivery enclosure defining an output laser light pulse beam delivery path from an output of a gas discharge laser to an input of a working apparatus employing the light contained in the output laser light pulse beam; a purge mechanism operatively connected to the beam delivery enclosure; an in-situ beam parameter monitor and adjustment mechanism within the enclosure, comprising a retractable beam redirecting optic; a beam analysis mechanism external to the enclosure; and, a retraction mechanism within the enclosure and operable from outside the enclosure and operative to move the retractable beam redirecting optic from a retracted position out of the beam path to an operative position in the beam path. The BDU may also include a beam attenuator unit contained within the enclosure adjustably mounted within the enclosure for positioning within the beam delivery path. The BDU may have at least two enclosure isolation mechanisms comprising a first enclosure isolation mechanism on a first side of the enclosure from the at least one optic module and a second enclosure isolation mechanism on a second side of the enclosure from the at least one optic module, each respective enclosure isolation mechanism comprising a flapper valve having a metal to metal seating mechanism and a locking pin assembly. A precision offset ratchet driver operative to manipulate actuator mechanisms in difficult to reach locations may be provided. An external kinematic alignment tool may be provided. A method of contamination control for a BDU is disclosed comprising selection of allowable materials and fabrication processes.

Molecular fluorine may be generated and distributed on-site at a fabrication facility. A molecular fluorine generator may come in a variety of sizes to fit better the needs of the particular fabrication facility. The generator may service one process tool, a plurality of process tool along a process bay, the entire fabrication facility, or nearly any other configuration within the facility. The process can obviate the need and inherent risks with transporting or handling gas cylinders. The process can be used in conjunction with a cleaning or fabrication operation used in the electronics fabrication industry.

Molecular fluorine may be generated and distributed on-site at a fabrication facility. A molecular fluorine generator may come in a variety of sizes to fit better the needs of the particular fabrication facility. The generator may service one process tool, a plurality of process tool along a process bay, the entire fabrication facility, or nearly any other configuration within the facility. The process can obviate the need and inherent risks with transporting or handling gas cylinders. The process can be used in conjunction with a cleaning or fabrication operation used in the electronics fabrication industry.

Methods and apparatus for the cleaning PECVD chambers that utilize molecular fluorine as the cleaning material.

Methods and apparatus for the cleaning reactor box chambers using molecular fluorine as the cleaning material. The molecular fluorine is dissociated in-situ in the chamber using the chamber RF power source. An exemplary method for of cleaning a reactor box chamber may comprise the steps: introducing molecular fluorine to the chamber; dissociating the molecular fluorine to create fluorine radicals; allowing the fluorine radicals to react with unwanted deposits in the chamber; and removing the resultant gas from the chamber.

A beam delivery unit and method of delivering a laser beam from a laser light source for excimer or molecular fluorine gas discharge laser systems in the DUV and smaller wavelengths is disclosed, which may comprise: a beam delivery enclosure defining an output laser light pulse beam delivery pat from an output of a gas discharge laser to an input of a working apparatus employing the light contained in the output laser light pulse beam; a purge mechanism operatively connected to the beam delivery enclosure; an in-situ beam parameter monitor and adjustment mechanism within the enclosure, comprising a retractable bean redirecting optic; a beam analysis mechanism external to the enclosure; and, a retraction mechanism within the enclosure and operable from outside the enclosure and operative to move the retractable beam redirecting optic from a retracted position out of the beam path to an operative position in the beam path. The BDU may also include a beam attenuator unit contained within the enclosure adjustably mounted within the enclosure for positioning within the beam delivery pat. The BDU may have at least two enclosure isolation mechanisms comprising a first enclosure isolation mechanism on a first side of the enclosure from the at least one optic module and a second enclosure isolation mechanism on a second side of the enclosure from the at least one optic module, each respective enclosure isolation mechanism comprising a flapper valve having a metal to metal seating mechanism and a locking pin assembly. A precision offset ratchet driver operative to manipulate actuator mechanisms in difficult to reach locations may be provided. An external kinematic alignment tool may be provided. A method of contamination control for a BDU is disclosed comprising selection of allowable materials and fabrication processes.