30 results about "Magnon" patented technology

A method of THz photon generation comprising: providing a magnon gain medium; wherein the magnon gain medium supports generation of nonequilibrium magnons; and injecting nonequilibrium electrons into the magnon gain medium. Propagation of nonequilibrium electrons in the magnon gain medium causes generation of nonequilibrium magnons. Interaction between nonequilibrium magnons causes generation of THz photons.

A magnon crystal magnetic sensor and a preparation method thereof belong to the technical field of magnetic sensing. The magnetic sensor includes a gadolinium gallium garnet substrate, a yttrium iron garnet film on the gadolinium gallium garnet substrate, a magnetostatic surface wave excitation antenna and a receiving antenna on the YIG, a zinc oxide film on the YIG and Equidistant interdigitated electrodes with reflective grids on top of ZnO film. The magnon crystal magnetic sensor provided by the present invention realizes magnetic detection by using the linear relationship between the slight change of the external magnetic field and the offset of the absorption peak of SMSW propagating in the magnon crystal. The SAW frequency obtained by the method of the invention is relatively high, which can effectively improve the temperature stability of the magnon bandgap structure, and further improve the temperature stability of the magnetic sensor.

The invention discloses a mcrostrip-gap incentive broadband electric-magnetic vibrator combined antenna. A gap is etched in a shielding conductor of a dielectric substrate with a dielectric constant ranging from 2 to 20, a microstrip feeder and a tuning supporting node are manufactured on the other face of the dielectric substrate, an antenna body of a dipole-groove line combination structure is vertically connected to a position above the gap, the antenna body of the dipole-groove line combination structure is formed in the mode that a top-layer radiation unit and a bottom-layer radiation unit which are antisymmetrical are designed on the dielectric substrate with the dielectric constant ranging from 2 to 20 in a combined mode, and the top-layer radiation unit and the bottom-layer radiation unit are connected to the two sides of the gap in a crossed mode. An eccentric microstrip line feed mode is adopted, the position of a feeding point, the length of the feeder, the length of the tuning supporting node and the length of a vibrator are changed, the broadband beam antenna with good performance can be obtained, under the condition of not adding a reflection back cavity, high gains and a stable directional diagram can be obtained, the structure is simple and manufacturing cost is low.

An apparatus for generation of coherent terahertz radiation is provided. In one example, the apparatus includes one or more multilayer tunable microcolumns. In turn, a multilayer tunable microcolumn can include a substrate, a bottom electrode, a bottom layer of a ferromagnetic material further comprising a magnon gain medium (MGM) coupled to the bottom electrode, a tunnel junction coupled to the ferromagnetic material, a spin injector coupled to the tunnel junction, a pinning layer coupled to the spin injector, a reference layer coupled to the pinning layer and a top electrode. In one example, a containment cavity encloses at least one of the multilayer tunable microcolumns. In one example, a storage cavity encloses the containment cavity.

A method for tuning the frequency of THz radiation is provided. The method utilizes an apparatus comprising a spin injector, a tunnel junction coupled to the spin injector, and a ferromagnetic material coupled to the tunnel junction. The ferromagnetic material comprises a Magnon Gain Medium (MGM). The method comprises the step of applying a bias voltage to shift a Fermi level of the spin injector with respect to the Fermi level of the ferromagnetic material to initiate generation of non-equilibrium magnons by injecting minority electrons into the Magnon Gain Medium. The method further comprises the step of tuning a frequency of the generated THz radiation by changing the value of the bias voltage.

A method, device, computer storage medium, and terminal for constructing a logic gate, comprising: non-resonantly driving ion electric quadrupole moment transition to generate a phase shift related to the quantum state of the ion; generating a phase shift related to the quantum state of the ion After the associated phase shift, a single-bit operation is performed on the ion to obtain a two-qubit controllable geometric phase logic gate; wherein, the phase shift associated with the quantum state of the ion is used to: by the hyperfine energy level structure middle two m F On the qubit |0>, |1> state formed by the magnon energy level of 0. In the embodiment of the present invention, after the phase shift related to the quantum state is generated by the electric quadrupole moment transition, a single-bit operation is performed on the ion, and the energy level m of the magneton is realized. F Geometric phase logic gates on qubits of 0.

A weak magnetic detection device based on 2D artificial magnon crystals, comprising a non-magnetic substrate, on which a ferromagnetic thin film layer is arranged, and on the ferromagnetic thin film layer are also made of ferromagnetic materials, The periodically arranged patterned ferromagnetic element array, through the periodically arranged elements, generates surface spin waves under the combined action of a constant auxiliary magnetic field and a high-frequency alternating electromagnetic field, and generates a resonant absorption phenomenon near a certain frequency to form a resonance peak. The resonance effect of this kind of spin wave is used as the application of sensor devices, and the weak magnetic sensor devices based on this structure are called 2D artificial magnon crystals. The invention is a weak magnetic detection device based on a 2D artificial magnon crystal, which has a simple structure and can be flexibly adjusted to obtain weak signals by adjusting the parameters of the device.

A method of tunable generation of terahertz radiation comprising: (A) providing a magnon gain medium; wherein the magnon gain medium supports generation of nonequilibrium magnons; (B) generating terahertz radiation in the magnon gain medium; and (C) tuning frequency of the terahertz radiation by causing changes in an external parameter. The substantial tuning of the frequency of the generated terahertz radiation can be achieved by applying an external magnetic field, and by causing changes in a value of the external magnetic field.

The invention provides a multi-direction magnetic pull type bistable vibration energy catcher which comprises an elongated circular beam, a bottom-open base cover, a substrate and a potential energy trap screw. The substrate is arranged in the opening of the base cover and closes the opening. The potential energy trap screw runs through the center of the substrate. A potential energy trap adjustment magnet is arranged on one end, which is located in the base cover, of the potential energy trap screw. The elongated circular beam is arranged in the base cover, and one end is fixed at the center of the top end face of the base cover. A magnon is arranged on the other end of the elongated circular beam. A tensible transducer is arranged on the substrate face which is connected with the base cover. A magnetic stator is arranged on the side, which is opposite to the magnon, of the transducer. According to the invention, the structure is simple; through symmetrical magnetic attraction force, the multi-direction magnetic pull type bistable vibration energy catcher is a bistable nonlinear system with a magnetic force intervening function, and has a wider operating bandwidth; and in a weak vibration environment, the equivalent piezoelectric coefficient is magnified several hundred times, and more power is conversed and produced.

The invention relates to a spin wave phase shifter based on polarization current control, which belongs to the technical field of magnon devices. The spin wave phase shifter includes a spin wave waveguide 4, a ferromagnetic layer 1 positioned above the spin wave waveguide, a heavy metal layer 2 positioned above the ferromagnetic layer 1, and connected to both ends of the heavy metal layer for access Two electrodes 3 of the current, wherein there is a gap between the spin wave waveguide 4 and the ferromagnetic layer 1, the long side of the ferromagnetic layer is perpendicular to the transmission direction of the spin wave waveguide, and the ferromagnetic layer is Asymmetric structure to generate shape anisotropy. The spin wave phase shifter based on the polarization current regulation of the present invention is regulated by the SOT effect, and the required current intensity is small; compared with the reversal of the existing polarization current regulation ferromagnetic material, the ferromagnetic layer of the present invention The relaxation result depends on its own shape anisotropy, which can be realized only by passing a short current pulse, and the efficiency and energy consumption are more advantageous.

The invention provides a magneton valve structure based on a topological insulator material and a spin-orbit torque effect, comprising: a topological insulator layer, a magneton valve component, and a metal electrode are sequentially located on a substrate from bottom to top; the magneton valve component consists of From bottom to top, it includes: a first ferromagnetic insulator layer, an antiferromagnetic layer, and a second ferromagnetic insulator layer; Magnetic insulator layer; the first ferromagnetic insulator layer and the second ferromagnetic insulator layer have the same or opposite magnetic moment directions; the inverse spin Hall voltage of the magneton valve structure is electrically charged before and after the current is passed into the topological insulator layer The flat state will change. The present invention utilizes the high spin Hall angle and high electrical conductivity characteristics of the topological insulator to improve the efficiency of current reversal magnetic moment, and can use the magneton valve structure as a new memory device structure with high efficiency and low loss.

The invention discloses an ultra-broadband wave absorber based on spin magneton periodic impulse pulse spectrum modulation. The cover plate, the three-hole socket, and the base shell, the invention realizes the use of the disc brush rheostat plate groove to cooperate with the three-hole socket to form electromagnetic force fluctuations of oblique alignment poles, and connect the suspension push and turn, so that the magnetic pressure is linked to the pendulum at the same time The pull of the wave-absorbing variable resistance band allows the resistance amplifier tube and the filter low-frequency tube to adapt to the shear conversion of electromagnetic force, forming a telescopic slot-type shear resistance operation, and improving the coverage and stability of the compressed magnetic field in the spin magnetic sub-box To improve the efficiency of over-electricity, so that the current pulse can be synchronously increased in modulation density, and the rated value tends to be stable, so that the main board of the wave absorber can operate in the most efficient working state, and improve the single-band performance. Body regulation, forming the complete control and efficient use of the overall wave absorber on the cycle of ultra-broadband magnetic materials.

The invention relates to a magneton magnetoresistance device and a spin Hall magnetoresistance device based on a magneton valve and a magneton junction. According to an embodiment, a magneton magnetoresistive device may include: a first magneton conduction layer; a second magneton conduction layer disposed on the first magneton conduction layer; and a second magneton conduction layer disposed on the first magneton conduction layer; An intermediate layer between the conduction layer and the second magneton conduction layer, wherein the first magneton conduction layer and the second magneton conduction layer are formed of a magnetic insulating material, and the intermediate layer is formed of a non-magnetic metal or antiferromagnetic insulators or antiferromagnetic metallic materials.

A method for tuning the frequency of THz radiation is provided. The method utilizes an apparatus comprising a spin injector, a tunnel junction coupled to the spin injector, and a ferromagnetic material coupled to the tunnel junction. The ferromagnetic material comprises a Magnon Gain Medium (MGM). The method comprises the step of applying a bias voltage to shift a Fermi level of the spin injector with respect to the Fermi level of the ferromagnetic material to initiate generation of non-equilibrium magnons by injecting minority electrons into the Magnon Gain Medium. The method further comprises the step of tuning a frequency of the generated THz radiation by changing the value of the bias voltage.