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Tunable multilayer terahertz magnon generator

一种磁振子、电子的技术，应用在磁振子激光器领域，能够解决应用不切实际等问题

Pending Publication Date: 2021-10-08
MAGTERA INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, AdTech's QCLs are only mechanically tuneable, making these QCLs impractical for most applications including spectroscopy, communications, etc., to name a few

Method used

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  • Tunable multilayer terahertz magnon generator
  • Tunable multilayer terahertz magnon generator
  • Tunable multilayer terahertz magnon generator

Examples

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example 1

[0064] For example, "Direct observation of half-metallicity in the Heusler compound Co 2 MnSi" paper, Co 2 The MnSi sample was prepared in a sputtering chamber, a molecular beam epitaxy (MBE) chamber, and a Synchrotron radiation ultraviolet emission spectroscopy (SRUPS) chamber equipped with a He gas discharge lamp (hν=21.2eV) and a multi-channel Spin Filter Hemispherical Energy Analyzer ( The Sherman function (S=0.42±0.05) is completely prepared and studied in an ultrahigh vacuum cluster (ultrahigh vacuum cluster). First, the Heusler compound Co was grown on a MgO(100) substrate by radio frequency (RF) sputtering at room temperature 2 MnGa (30nm) epitaxial buffer layer (epitaxial buffer layer). Through the optimized additional annealing process, the L21 grade was obtained at 550°C, as shown by high energy electron diffraction (RHEED) and X-ray diffraction (XRD). co 2 MnSi (70nm) was RF sputtered on top at room temperature. Induced by the buffer layer, Co 2 MnSi thin...

example 2

[0067] In the paper "Low-temperature atomic layer deposition of MgO thin films on Si" published by S Vangelista et al. in Journal of Physics D: Applied Physics, Vol. Cyclopentadienyl) Magnesium and H 2 O precursor, grown by atomic layer deposition in a wide deposition temperature window of 80-350°C. MgO thin film with ~0.12nm cycle -1 constant growth rate deposited on HF-last Si(1 0 0) and SiO 2 / Si substrate. The structure, morphology and chemical properties of the synthesized MgO thin films were studied by X-ray reflectivity, grazing incidence X-ray diffraction, time-of-flight secondary ion mass spectrometry and atomic force microscopy. In addition to good chemical homogeneity and a polycrystalline structure with a thickness of more than 7 nm, the MgO layer is characterized by a sharp interface with the substrate and a limited surface roughness. CV measurements were carried out on Al / MgO / Si MOS capacitors with MgO in the thickness range of (4.6-11) nm, which allowed the ...

example 3

[0070] In K Inomata et al., "Structural and magnetic properties and tunnel magnetoresistance for Co 2 (Cr,Fe)Al and Co 2 FeSi full-Heusler alloys" paper, studied the Co 2 (Cr1-xFex)Al(0≤x≤1) and Co 2 Structure and magnetization of FeSi all-Heusler alloys. Thin films were deposited on thermally oxidized Si(SiO 2 ) and MgO(001) single crystal substrates. After deposition at room temperature (RT), the films were also post-annealed. Using Co 2 YZ(20nm) / Al(1.2nm)-oxide / Co 75 Fe 25 (3nm) / IrMn(15nm) / Ta(60nm) stack structure to fabricate a magnetic tunneling junction with full Hestler alloy electrodes and microfabrication using electron beam lithography and Ar ion etching with a junction area of ​​10 2 μm 2 , where Co 2 YZ stands for Co 2 (Cr1-xFex)Al or Co 2 FeSi. The tunnel barrier was formed by depositing 1.2nm aluminum followed by plasma oxidation in the chamber. X-ray diffraction reveals A2 or B2 structures and substrates depending on heat treatment conditions, but ...

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Abstract

A method for tuning the frequency of THz radiation is provided. The method utilizes an apparatus comprising a spin injector, a tunnel junction coupled to the spin injector, and a ferromagnetic material coupled to the tunnel junction. The ferromagnetic material comprises a Magnon Gain Medium (MGM). The method comprises the step of applying a bias voltage to shift a Fermi level of the spin injector with respect to the Fermi level of the ferromagnetic material to initiate generation of non-equilibrium magnons by injecting minority electrons into the Magnon Gain Medium. The method further comprises the step of tuning a frequency of the generated THz radiation by changing the value of the bias voltage.

Description

[0001] References to related applications [0002] This application claims priority to U.S. Nonprovisional Application Serial No. 16 / 245,224, filed January 10, 2019, entitled "TUNABLE MULTILAYER TERAHERTZMAGNON GENERATOR," the entire contents of which are incorporated herein by reference. technical field [0003] The invention relates to the field of magnon lasers for generating terahertz radiation. Background technique [0004] Terahertz (THz) radiation is an electromagnetic radiation with a frequency range of 0.1 THz to 30 THz, which occupies a part of the electromagnetic spectrum between the microwave band and the infrared band. [0005] Terahertz photons have less energy than optical photons. This is why terahertz waves (THz-waves) can penetrate deep into matter that light waves cannot penetrate. At terahertz frequencies, molecules vibrate. This is why terahertz waves are useful in molecular research. [0006] In fact, in the terahertz range, the unique rotational an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S1/02
CPCH01S1/02H01S2302/02H01F10/1936H01F10/3268H01F10/3254H01S5/3402H01S5/0622H01S5/0218H01S5/0213H01S5/0208H01S5/021H01S5/04252H01F41/32
Inventor B·G·坦克希列维奇N·J·基什内尔C·T·瑟曼
Owner MAGTERA INC
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