A kind of magnon crystal magnetic sensor and its preparation method

A magnetic sensor and magnon technology, applied in the field of magnetic sensing, can solve problems such as irregular etching patterns, poor stability, and affecting the performance of magnon crystals

Active Publication Date: 2020-10-23
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Dry etching is ion etching, which has problems such as high cost and easy damage to YIG; chemical wet etching first obtains patterns through photolithography, and then uses chemical reagents to etch, which has poor stability and irregular etching patterns And other problems, the above problems will affect the performance of the magnon crystal

Method used

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  • A kind of magnon crystal magnetic sensor and its preparation method
  • A kind of magnon crystal magnetic sensor and its preparation method
  • A kind of magnon crystal magnetic sensor and its preparation method

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Experimental program
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Embodiment 1

[0025] A method for preparing a magnon crystal magnetic sensor, specifically comprising the following steps:

[0026] Step 1, growing a yttrium iron garnet (YIG) film on a gadolinium gallium garnet substrate (GGG) by liquid phase epitaxy to obtain a substrate with YIG;

[0027] Step 2, cleaning: first, soak the substrate with YIG obtained in step 1 in a mixture of concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 1:1 for 20 minutes, take it out and rinse it with deionized water; then, clean the substrate in the previous step Soak the substrate in a mixture of ammonia, hydrogen peroxide and deionized water with a volume ratio of 1:1:5 for 20 minutes, take it out and rinse it with deionized water; finally, clean it ultrasonically in acetone and ethanol in turn, and dry it with nitrogen gas for later use ;

[0028] Step 3, use photolithography to form antenna patterns on the YIG substrate cleaned in step 2, then use magnetron sputtering to deposit platinum ...

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Abstract

A magnon crystal magnetic sensor and a preparation method thereof belong to the technical field of magnetic sensing. The magnetic sensor includes a gadolinium gallium garnet substrate, a yttrium iron garnet film on the gadolinium gallium garnet substrate, a magnetostatic surface wave excitation antenna and a receiving antenna on the YIG, a zinc oxide film on the YIG and Equidistant interdigitated electrodes with reflective grids on top of ZnO film. The magnon crystal magnetic sensor provided by the present invention realizes magnetic detection by using the linear relationship between the slight change of the external magnetic field and the offset of the absorption peak of SMSW propagating in the magnon crystal. The SAW frequency obtained by the method of the invention is relatively high, which can effectively improve the temperature stability of the magnon bandgap structure, and further improve the temperature stability of the magnetic sensor.

Description

technical field [0001] The invention belongs to the technical field of magnetic sensing, and in particular relates to a magnon crystal magnetic sensor and a preparation method thereof. Background technique [0002] Magnetic sensors are widely used in modern industry and electronic products. According to different measurement methods, magnetic sensors are divided into Hall magnetic sensors, fluxgate magnetic sensors, magnetoresistive sensors, and superconducting quantum interference devices (SQUID). Based on the wide application of magnetic sensors, high sensitivity, miniaturization and stability have attracted much attention. The magnon crystal is a periodic artificial magnetic microstructure. By changing the periodic structure, the band gap structure of the magnon crystal can be adjusted. When the external magnetic field changes slightly, the band gap of the magnon crystal will change, resulting in the SMSW propagating in the magnon crystal. The absorption peak of (silicon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/02C23C14/04C23C14/08C23C14/58G01R33/00G01R33/02
Inventor 钟智勇王城刘爽金立川文天龙廖宇龙唐晓莉张怀武
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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