Magnon magnetoresistance and spin Hall magnetoresistance devices based on magneton valves and magneton junctions

Abstract

The invention relates to a magneton magnetoresistance device and a spin Hall magnetoresistance device based on a magneton valve and a magneton junction. According to an embodiment, a magneton magnetoresistive device may include: a first magneton conduction layer; a second magneton conduction layer disposed on the first magneton conduction layer; and a second magneton conduction layer disposed on the first magneton conduction layer; An intermediate layer between the conduction layer and the second magneton conduction layer, wherein the first magneton conduction layer and the second magneton conduction layer are formed of a magnetic insulating material, and the intermediate layer is formed of a non-magnetic metal or antiferromagnetic insulators or antiferromagnetic metallic materials.

Description

technical field [0001] The present invention generally relates to the field of magnetic devices, and more particularly relates to a magneton magnetoresistance device based on a magneton valve and a magneton junction and a spin Hall magnetoresistance device including a magneton magnetoresistance device. Background technique [0002] Since the discovery of tunneling magnetoresistance (TMR) in Fe / Ge / Co multilayers in 1975 and giant magnetoresistance (GMR) in magnetic multilayers in 1988, physics and materials in spintronics Scientific research and applications have made great progress, especially the tunneling transport properties of spin-related electrons in magnetic tunnel junctions and the tunneling magnetoresistance effect have become one of the important research fields in condensed matter physics. In 1995, Miyazaki et al. and Moodera et al. discovered the high room temperature tunneling magnetoresistance effect in "ferromagnetic metal / Al-O insulating barrier / ferromagnetic...

AI Technical Summary

Problems solved by technology

[0003] Traditional GMR and TMR devices affect the transport properties of the device through the spin of carriers—electrons, although they have made great achievements in the fields of traditional spintronics, such as computer hard disk heads and magnetic random access memories. Successful, but there is still room for further innovation and development of these devices

Their biggest defect is that the operation of the device is accompanied by the movement of the spin carrier-electrons, which will generate Joule heat, which is the largest source of power consumption for existing microelectronic devices

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