Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method, device, computer storage medium and terminal for constructing logic gates

A technology of logic gates and ions, which is applied in the field of building logic gates, can solve problems such as inability to generate phase differences

Active Publication Date: 2022-05-20
TSINGHUA UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The transition frequency between this pair of magnon energy levels is generally in the microwave frequency range, and the impact of the transition frequency with the fluctuation of the external magnetic field is very small, and its coherence time can reach more than 10 seconds, which is an ideal qubit carrier; but the magnon energy The Stark frequency shift produced by the level pair under the action of laser is basically the same, and there is no sufficient phase difference in the evolution process of the two ground state energy levels.
Therefore, the geometric phase logic gates in the related art cannot be controlled by m F Efficient implementation on qubits composed of two magnon energy levels = 0

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method, device, computer storage medium and terminal for constructing logic gates
  • A method, device, computer storage medium and terminal for constructing logic gates
  • A method, device, computer storage medium and terminal for constructing logic gates

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] In order to make the purpose, technical solution and advantages of the present invention more clear, the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined arbitrarily with each other.

[0046] The steps shown in the flowcharts of the figures may be performed in a computer system, such as a set of computer-executable instructions. Also, although a logical order is shown in the flowcharts, in some cases the steps shown or described may be performed in an order different from that shown or described herein.

[0047] Figure 4 A flowchart of a method for constructing a logic gate according to an embodiment of the present invention, such as Figure 4 shown, including:

[0048] Step 401, non-resonantly driving ion electric quadrupole moment transition to genera...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method, device, computer storage medium, and terminal for constructing a logic gate, comprising: non-resonantly driving ion electric quadrupole moment transition to generate a phase shift related to the quantum state of the ion; generating a phase shift related to the quantum state of the ion After the associated phase shift, a single-bit operation is performed on the ion to obtain a two-qubit controllable geometric phase logic gate; wherein, the phase shift associated with the quantum state of the ion is used to: by the hyperfine energy level structure middle two m F On the qubit |0>, |1> state formed by the magnon energy level of 0. In the embodiment of the present invention, after the phase shift related to the quantum state is generated by the electric quadrupole moment transition, a single-bit operation is performed on the ion, and the energy level m of the magneton is realized. F Geometric phase logic gates on qubits of 0.

Description

technical field [0001] This article involves but is not limited to computer technology, especially a method, device, computer storage medium and terminal for constructing logic gates. Background technique [0002] A quantum computer is a device that uses quantum logic gates for general-purpose quantum computing and quantum simulation. The basic logic unit that constitutes a quantum computer is composed of qubits that obey the principles of quantum mechanics, combined with universal single-bit and double-bit quantum logic gates, which can realize arbitrary logic gate operations. Complex quantum algorithms can be decomposed into several single-bit and double-bit quantum logic gates, through which a large number of qubits can be coherently manipulated, a quantum computer can be physically realized. Under experimental conditions, high-fidelity quantum logic gate operations have been realized on ion qubit arrays trapped in ion traps; ion qubits have a coherence time of more than...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06N10/20G06N10/60H01S3/30
CPCG06N10/00H01S3/30
Inventor 段路明周子超
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products