Magneto-valve structures based on topological insulator materials and spin-orbit torque effects

Abstract

The invention provides a magneton valve structure based on a topological insulator material and a spin-orbit torque effect, comprising: a topological insulator layer, a magneton valve component, and a metal electrode are sequentially located on a substrate from bottom to top; the magneton valve component consists of From bottom to top, it includes: a first ferromagnetic insulator layer, an antiferromagnetic layer, and a second ferromagnetic insulator layer; Magnetic insulator layer; the first ferromagnetic insulator layer and the second ferromagnetic insulator layer have the same or opposite magnetic moment directions; the inverse spin Hall voltage of the magneton valve structure is electrically charged before and after the current is passed into the topological insulator layer The flat state will change. The present invention utilizes the high spin Hall angle and high electrical conductivity characteristics of the topological insulator to improve the efficiency of current reversal magnetic moment, and can use the magneton valve structure as a new memory device structure with high efficiency and low loss.

Description

Technical field [0001] The present invention belongs to the area of ​​memory, and more particularly to a magnetic sub-valve structure based on topological insulator material and spin track torque effect. Background technique [0002] In recent years, the development of artificial intelligence, cloud computing and other fields has driven the growth of the world information data. According to statistics from International Data Corporation, IDC, it is expected that by 2025, the global data will reach 163ZB. Under such a huge amount of data, the fast and stable storage and data processing technology is the problem that is currently an urgent problem. According to the information storage medium and method, there are three main storage technologies, semiconductor storage, magnetic storage, and optical storage, respectively. Among them, magnetic storage technology has the advantages of data storage density and non-volatile, and is one of the storage technologies that are widely concerne...

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Problems solved by technology

[0004] Chinese patent document CN 111697127A proposes a magnetic random access memory based on the spin-orbit torque of heavy metal materials. Although heavy metal materials have high electrical conductivity, their spin Hall angles are small, and the efficiency of the device needs to be improved.

So far, research based on topological insulators has focused more on the material itself, and the research and design of related magnetic memory prototype devices have not been mentioned, nor have the special magnetic properties of the magnetic fixed layer and free layer in topological insulators and magneton valves. The case of combining insulating materials

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