41results about How to "Suppress parasitic oscillation" patented technology

An oscillator includes a resonator section structured such that a dielectric is interposed between first and second conductors and such that the first and second conductors are electrically connected to a resonant tunneling diode, a capacitor section structured such that the dielectric is interposed between the first and second conductors, a line section configured to electrically connect the resonator section and the capacitor section in parallel to each other, and a resistor section configured to electrically connect the first and second conductors to each other. A first position of the resonator section and a second position of the capacitor section are connected to each other by the line section so that the first position and the second position are substantially electrically equivalent to each other in a wavelength range larger than a wavelength of an electromagnetic wave that resonates in the resonator section.

The invention relates to a switching device for an X-ray generator for providing a required output power voltage at an output of a resonance power converter. The switching device may comprise a main switch 16 and an auxiliary switch 26, wherein the main switch 16 may comprise a first internal capacitance 5 and wherein the auxiliary switch 26 may be connected in parallel to the main switch 16. Moreover, the main switch 16 may be controllable and the auxiliary switch 26 may be also controllable. Furthermore, the auxiliary switch 26 may be controllable in dependence of the main switch 16, wherein the auxiliary switch 26 may be controllable for discharging of the first internal capacitance 5 of the main switch 16.

The invention relates to a control method which can be applied to an active-clamp flyback miniature photovoltaic grid-connected inverter device. The active-clamp flyback miniature photovoltaic grid-connected inverter device comprises a flyback converter and a power frequency polarity conversion circuit. In the device, a current reference is used for controlling a flyback primary-side current peak value so that the device can output a half-wave sinusoidal current, and the output voltage is clamped by a grid voltage. When the instantaneous power is lower, a constant frequency current discontinuous mode in combined with a variable frequency current critical continuous mode is adopted in the flyback control method. When the flyback converter works in a variable frequency current critical discontinuous mode, an auxiliary switching tube can be conducted for a period of time when the secondary-side current of the flyback converter reaches zero, the conduction time can be accurately controlled by a digital chip, thus realizing the leakage inductance energy feedback and the soft switch of a master switching tube under the condition of wide-range output voltages and different instantaneous powers and greatly improving the efficiency under the condition of full loads.

An interdigital electrode structure is disclosed. The interdigital electrode structure is disposed on a substrate, wherein the ends of the interdigital electrodes in the interdigital electrode structure are implanted with ions to form a doped part. Also disclosed is a surface acoustic wave device, which includes the above interdigitated electrode structure, and the surface acoustic wave device is a filter or a resonator. In addition, a method for manufacturing an interdigital electrode structure is also disclosed, including preparing a substrate with a piezoelectric layer; fabricating an interdigital electrode on the substrate; and performing ion implantation on the interdigital electrode to form a The end forms a doped portion. The doped part is formed by ion implantation at the end of the interdigitated electrode, which improves the electric field gradient at the end of the electrode without changing the weight of the agent and does not adjust the thickness of the interdigitated electrode, suppresses parasitic oscillations, and ultimately improves the performance of the surface acoustic wave device. .

A thin film bulk acoustic resonator is disclosed, comprising a bottom electrode layer, a piezoelectric layer and a top electrode layer arranged on the upper part of the substrate where the acoustic wave reflection structure is located, wherein the part of the piezoelectric layer corresponding to the boundary of the acoustic wave reflection structure passes through the retrograde Polarization treatment to form a depolarized portion. Also disclosed is a manufacturing process of a thin film bulk acoustic resonator, comprising making a bottom electrode layer on a substrate on which an acoustic wave reflection structure is formed or to be formed to cover the acoustic wave reflection structure; making a piezoelectric layer on the bottom electrode layer; The part of the layer corresponding to the boundary of the acoustic wave reflection structure is depolarized to form a depolarized part; and the top electrode layer is made on the piezoelectric layer. The thin-film bulk acoustic resonator and its manufacturing process can inhibit the shear wave from taking energy away from the resonant area above the cavity of the resonator, thereby ensuring the mechanical vibration strength of the resonant area, suppressing parasitic oscillation, and improving the Q value of the resonator.

Provided is a semiconductor device in which parasitic oscillation between a plurality of semiconductor elements connected in parallel with each other can be suppressed by a simple configuration. The plurality of semiconductor elements (EL) connected in parallel include a plurality of first semiconductor elements (EL1) and a plurality of second semiconductor elements (EL2). A drive circuit (200) for supplying a gate signal to each of a plurality of semiconductor elements (EL) includes a main circuit (201) and a plurality of insertion circuits (210) including a first insertion circuit (211) and a second insertion circuit (212). The first insertion circuit (211) is inserted between the main circuit (201) and the plurality of first semiconductor elements (EL1). A second insertion circuit (212) is inserted between the main circuit (201) and the plurality of second semiconductor elements (EL2). Each of the first insertion circuit (211) and the second insertion circuit (212) includes a first diode (D1) forward facing the main circuit (201) and a second diode (D2) reversely connected in parallel with the first diode (D1).