The invention discloses a
silicon-based
graphene photoelectric
detector. The
silicon-based
graphene photoelectric
detector comprises a
silicon waveguide, an
oxide substrate layer, an
oxide cladding layer and
graphene, and further comprises sub-
wavelength metal electrodes composed of a first
metal electrode and a second
metal electrode, which are symmetrically arranged, wherein the sub-
wavelength metal electrodes are crossly arrayed above the silicon
waveguide by adopting two different types of metal. According to the silicon-based graphene photoelectric
detector disclosed by the invention, twodifferent types of the metal are in contact with graphene to generate
doping of different concentrations or types, so that
electric potential difference is introduced between the sub-
wavelength metalelectrodes and is used for driving a
photon-generated carrier to flow toward the two electrodes. According to the silicon-based graphene photoelectric detector disclosed by the invention, the contactarea between the electrodes and the graphene is enlarged through a crossed arrangement structure of the electrodes, and the
absorption efficiency of the carrier is improved; the graphene is laminatedon upper surfaces of the sub-wavelength
metal electrodes and the sub-wavelength
metal electrodes are used for carrying out
optical field regulation and control on a
transverse magnetic (TM) model transmitted in the silicon
waveguide to increase an
electric field component in a direction parallel to the graphene, so that the interaction effect between an
optical field and the graphene is enhancedand the responsiveness of the detector is improved.