38results about How to "Low noise figure" patented technology

A high electron mobility transistor includes a substrate, a buffer layer, a channel layer, a spacer layer, a schottky layer and a cap layer. The buffer layer is formed on the substrate. The channel layer is formed on the buffer layer, in which the channel layer comprises a superlattice structure formed with a plurality of indium gallium arsenide thin films alternately stacked with a plurality of indium arsenide thin films. The spacer layer is formed on the channel layer. The schottky layer is formed on the spacer layer. The cap layer is formed on the schottky layer.

A RF device such as a tower mounted amplifier (TMA), mast-head amplifier (MHA), or Tower Mounted Boosters (TMB) includes a housing having a plurality of cavities and an input and an output, the input being coupled to the antenna and the output being coupled to a base station. The housing includes a transmission path holding multiple coaxial resonators. The housing further includes multiple receive paths including at least one path having a plurality of cavities, each cavity containing a dielectric resonator. The metallic transmit resonator nearest the antenna input is coupled to the first dielectric resonator via a common resonant wire. The last dielectric resonator in the receive path is coupled to a first metallic resonator of a downstream clean-up filter via another common resonant wire.

A low noise amplifier topology includes a dual gate transistor device, such as a HEMT device and employs resistive feedback with a DC block associated with the amplifier output to a desired high voltage gain and a low noise figure over a desired range of frequencies.

A wireless magnetic resonance imaging (MRI) scanner bore tube assembly has a radio frequency (RF) antenna, a microwave antenna array and an electrical screen. The RF antenna is formed of a series of RF antenna elements, each comprising a rung. The rungs are spaced at intervals of substantially half of the wavelength of the frequency of operation of the microwave antenna array. The microwave antenna array is formed by a series of microwave antenna elements interleaved between the rungs and the screen acts as a reflector to reflect signals from the microwave antenna elements towards the center of the bore tube.

Provided is a frequency conversion mixer. The frequency conversion mixer includes a transconductance stage, a switching stage, a load stage, a current bleeding circuit, and a bias stage. The transconductance stage receives an RF signal, and outputs a current corresponding to a voltage of the RF signal. The switching stage switches the current which is outputted from the transconductance stage in response to a local oscillation signal, for frequency conversion the RF signal into an intermediate frequency (IF) signal. The load stage is connected between the switching stage and a supply voltage terminal. The current bleeding circuit is connected parallel with the switching stage, especially, embodying inverter structure with transconductance stage to get not only current bleeding effect but also current reuse effect, and one resonant inductor for reducing noise which is generated in parasitic capacitance at node between transconductance stage and switching stage. The bias stage is connected between the transconductance stage and a ground terminal, and has the switched biasing technique for allowing not only the stable bias current but also lowering the flicker noise.

The present disclosure relates to a front-end system for a radio device, the front-end system comprising a low-noise amplifier (LNA), arranged for receiving a radio frequency input signal (RFIN) and arranged for outputting an amplified radio frequency signal (RFOUT), wherein the low-noise amplifier comprises a first differential amplifier, and a mixer (MIX), arranged for down-converting the amplified radio signal (RFOUT) provided by the low-noise amplifier (LNA) to a baseband signal (BB), by multiplying the amplified radio signal (RFOUT) with a local oscillator (LO) frequency tone, said low-noise amplifier (LNA) and said mixer (MIX) being inductively coupled.

A CMOS differential power amplifier having broadband input matching with Noise and Non-linearity Cancellation. The broadband input match is realized by using two “Diode-Connected” NFETs (i.e., N-type Field Effect Transistors). Resulting noise degradation is reduced by using a noise cancellation structure. By using the same structure the disclosed method and apparatus also achieves non-linearity cancellation.

A negative-feedback type ultra-wideband signal amplification circuit is proposed, which is designed for integration to an ultra-wideband (UWB) signal processing circuit system for providing a low-noise amplification function to UWB signals. The proposed circuit architecture is characterized by the provision of a dual-step filter circuit on the input side, the provision of a resistive-type feedback circuit in the transistor-based amplification circuitry, and the provision of a common-source transistor-based amplification circuit on the output side. These features allow the proposed signal amplification circuit to have flat power gain, lower power consumption, low noise figure, and higher operational stability.

A two port parametric amplifier has a first port that receives an input signal to be amplified and upconverted and a second port that receives a local oscillator signal. The amplified upconverted input signal is emitted as an output at upper and lower sideband frequencies. The amplifier further has a pair of varactor diodes connected between the first port and the second port. The diodes are connected in parallel from the first port and in series from the second port.