38results about How to "Low noise figure" patented technology

A CMOS differential power amplifier having broadband input matching with Noise and Non-linearity Cancellation. The broadband input match is realized by using two “Diode-Connected” NFETs (i.e., N-type Field Effect Transistors). Resulting noise degradation is reduced by using a noise cancellation structure. By using the same structure the disclosed method and apparatus also achieves non-linearity cancellation.

A two port parametric amplifier has a first port that receives an input signal to be amplified and upconverted and a second port that receives a local oscillator signal. The amplified upconverted input signal is emitted as an output at upper and lower sideband frequencies. The amplifier further has a pair of varactor diodes connected between the first port and the second port. The diodes are connected in parallel from the first port and in series from the second port.

A vanadium oxide thermo-sensitive film material with a high temperature coefficient of resistance (TCR) contains a rare earth element of Yttrium serving as a dopant in a preparation process. The vanadium oxide thermo-sensitive film material includes a substrate and a yttrium-doped vanadium oxide film layer. The yttrium-doped vanadium oxide film layer includes three elements of vanadium, oxygen and yttrium, wherein the atomic concentration of yttrium is at a range of 1%-8%, the atomic concentration of vanadium is at a range of 20-40% and the residue is oxygen. The method for preparing the vanadium oxide thermo-sensitive film material with high TCR includes a reactive magnetron sputtering method using a low-concentration yttrium-vanadium alloy target as a sputtering source or a reactive magnetron co-sputtering method using dual targets including a high-concentration yttrium-vanadium alloy target and a pure vanadium target as a co-sputtering source.

The invention discloses an ultra wide band low noise amplifier with an active negative feedback structure, solves the problem that an existing low noise amplifier is relatively narrow in bandwidth andrelatively high in noise coefficient and has relatively high gain and good linearity. The low noise amplifier comprises an input amplifier module (1), an active negative feedback module (2) and an output amplifier module (3). According to the ultra wide band low noise amplifier, active negative feedback is introduced; an active inductor is formed through utilization of a source level follower; the bandwidth of a circuit is expanded by compensating high frequency band gain; the structure also has a noise cancellation effect; and a noise coefficient of the circuit is optimized. The linearity ofthe circuit is optimized by distributing a static current through the input amplifier module and the output amplifier module. The source level negative feedback is also introduced into an output endof the designed low noise amplifier, and the bandwidth of the circuit is further expanded. The ultra wide band low noise amplifier is simple in structure, easy to integrate and small in occupied area.

A receiver front end having low noise amplifiers (LNAs) with enhanced input third order intercept point is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured load FET have a degeneration circuit comprising a tank circuit tuned to a harmonic of the operating frequency.

A high electron mobility transistor includes a substrate, a buffer layer, a channel layer, a spacer layer, a schottky layer and a cap layer. The buffer layer is formed on the substrate. The channel layer is formed on the buffer layer, in which the channel layer comprises a superlattice structure formed with a plurality of indium gallium arsenide thin films alternately stacked with a plurality of indium arsenide thin films. The spacer layer is formed on the channel layer. The schottky layer is formed on the spacer layer. The cap layer is formed on the schottky layer.