62results about How to "Increase the conductive contact area" patented technology

The invention seeks to provide a new semiconductor device mounting method, a semiconductor device mounting structure, an electro-optical device and an electronic device that can improve the reliability of conductively joined portions, even if the numbers of wiring terminals and electrodes increases and intervals therebetween are narrowed. A wiring terminal is formed on a wiring substrate, and an electrode is formed on a semiconductor device. Here, the width of the wiring terminal is formed so that it becomes smaller than the width of the electrode. When the semiconductor device is mounted on the wiring substrate, the wiring terminal becomes embedded in the electrode due to applied pressure. It is preferable for the embedding amount of the wiring terminal to be within the range of about 1 µm to 5 µm.

The invention discloses a split wire clamp hardware. The terminal interface of the wire clamp hardware is provided with two terminal splints for relatively clamping the terminal board. The conductive contact surfaces on both sides of the board, and the two terminal splints are correspondingly provided with fastening holes extending in opposite directions. In this way, when conducting conductive connection with the terminal board, the terminal board is clamped between the two terminal splints, and the conductive contact surfaces on the opposite side plates of the two terminal splints are in contact with the wires on both sides of the terminal board to realize current conduction In this way, when the bolt connection between the hardware and the terminal board is loose, one of the two terminal splints is always in close contact with the terminal board. The conductive contact between the terminal splint and the terminal board can increase the conductive contact area and further improve the flow performance.

The invention provides a method for connecting an electrolytic aluminum anode without pouring. In the method, a steel talon is manufactured into a wedge shape with a big end down cross section; the cross section of an anode carbon block is made into a boss shape, and a dovetail through slot is formed in the middle of the upper plane of the anode carbon block along the vertical direction; after the steel talon is put in the dovetail through slot, steel plates with the same number and same thickness are filled in gaps on two sides of the steel talon correspondingly, so that the two sides of thesteel talon and the copper plates are closely jointed, and the two steel plates and the anode carbon blocks on two sides are closely jointed. The pouring connecting method of melting ferro-phosphorusis changed into a wedge plate compacting connecting method, an intermediate frequency furnace for melting ferro-phosphorus and pressure-disengaging equipment for disengaging a phosphorus iron hoop bypressure are canceled, so that the equipment investment is reduced, the labor intensity is reduced, and the working environment is improved; the profile steel talon is put in the dovetail through slot of the carbon block and compacted by a wedge-shaped stainless steel plate without pouring, so the operation is easy and convenient; and the conventional mode of combining the anode steel talon and the anode carbon block is changed, a transitional connecting mode of combining copper and carbon is adopted, so that the conductive contact area is enlarged, and the anode conductive drop can be effectively reduced.

The present invention provides an electric conduction contact component and an electric connector using the same. The electric conduction contact component comprises a base body which extends flatly and straightly; the front end of the base body is connected with a first connecting section which is arranged in an upwards tilting manner through a first bent section; the front end of the first connecting section is connected with a contact section through a second bent section; the contact section is provided with a front contact portion which is in electric conduction contact with a matched electric conduction contact component; the lower side surface of the first connecting section is provided with a rear contact point which is in electric conduction contact with the front contact portion of the matched electric conduction contact component; and the front contact portion and space at the upper side and lower side of the base body form an insertion space into which the matched electric conduction contact component can be inserted. The electric conduction contact component provided by the invention is simple in structure. With the electric conduction contact component adopted, multi-point contact can be realized, the radiation effect of a short pile can be eliminated, and insertion loss can be decreased.

The invention relates to an encapsulated conducting structure for a semiconductor substrate and the forming method thereof. The encapsulated conducting structure consists of a under bump metal layer covering the liner of the semiconductor substrate, at least one auxiliary part is arranged on the under bump metal layer, and then a bump metal layer is covered, and finally a bump is arranged on a bump conducting layer. Thereby, the bump can electrically connect with the lining of the semiconductor substrate by the under bump metal layer and the bump conducting layer, and provide better connecting buffer capacity and conduction property.