Semiconductor structure and forming method thereof

Abstract

The embodiment of the invention provides a semiconductor structure and a forming method thereof. The semiconductor structure comprises the following steps: providing a substrate and a plurality of mutually separated conductive structures located on the substrate; forming an insulating layer on the upper surface of each conductive structure; forming an isolation structure, wherein the isolation structure is located on the side wall of each conductive structure and the side wall of each insulating layer; removing part of the isolation structure on the side wall of the insulating layer, wherein the upper surface of the residual isolation structure is higher than the upper surface of the conductive structure; removing part of the insulating layer away from the conductive structure, and in the direction perpendicular to the side wall of the insulating layer, the width of the top of the remaining insulating layer being smaller than that of the bottom of the remaining insulating layer; the surface of the substrate, the side wall of the isolation structure and the side wall of the insulating layer defining a groove, and the width of an opening of the groove being larger than that of the bottom of the groove in the direction perpendicular to the side wall of the groove. The embodiment of the invention is beneficial to improving the performance of the semiconductor structure.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a semiconductor structure and a method for forming the same. Background technique [0002] Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM) is a semiconductor storage device commonly used in computers, and is composed of many repeated storage units. Each memory cell usually includes a capacitor and a transistor. The gate of the transistor is connected to the word line, the drain is connected to the bit line, and the source is connected to the capacitor. The voltage signal on the word line can control the opening or closing of the transistor, and then through the bit line Read the data information stored in the capacitor, or write the data information into the capacitor through the bit line for storage. [0003] As the size of the DRAM memory cell array becomes smaller and smaller, the size of its conductive contact window is also smaller a...

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Problems solved by technology

[0005] Embodiments of the present invention provide a semiconductor structure and a method for forming the same, which help to solve the problem that the size of the conductive contact window of the semiconductor structure is too small

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