38results about How to "High electric field" patented technology

A method of manufacturing a metal gate / high K dielectric gate stack includes the steps of: forming an interfacial layer of SiON or SiO2 on a silicon substrate; depositing a high K dielectric film on the interfacial layer; performing a rapid thermal anneal of the high K dielectric film; depositing a TaN metal gate electrode film on the high K dielectric film; depositing a polysilicon gate layer on the TaN metal gate electrode film, and then depositing a hard mask layer; patterning a photoresist mask, and performing an anisotropic etching of the hard mask layer; removing the photoresist mask, and etching the polysilicon by reactive ion etching with the hard mask as masking layer using a mixed gas of Cl2 / HBr; and etching the TaN metal gate electrode / high K dielectric gate stack by reactive ion etching with the hard mask as masking layer using BCl3-based etchant gas.

A semiconductor device includes a semiconductor layer formed on a substrate, an electrode contact window that includes a recess formed on a surface of the semiconductor layer, an inner wall having a slope, and a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layer, in which the drain electrode is in contact with the slope of the inner wall.

A method of manufacturing an X-ray tube component, includes diffusion bonding or brazing an anode of rhodium, molybdenum or tungsten to a heat spreader of molybdenum, tungsten, or a composite of molybdenum and / or tungsten. Suitable joint materials for diffusion bonding include gold; suitable joint materials for brazing include an alloy of silver and copper, an alloy of silver, copper and palladium, an alloy of gold and copper or an alloy of gold, copper and nickel. The resulting tube component delivers reliable behaviors and the joint can withstand high temperatures, high temperature gradients, fast temperature changes, extremely high radiation and extremely high electric field, while maintaining good high vacuum properties.

The present invention relates to a cable termination system comprising: —a power cable sequentially comprising a first length of exposed outer semiconductive layer, a length of exposed insulating layer and a length of exposed electric conductor, —an electric field control element adapted to be arranged around a portion of said power cable, said electric field control element comprising: —first and second longitudinally spaced semiconducting electrodes; —a field grading layer longitudinally extending between the first and second semiconducting electrodes and in electric contact therewith; —an insulating layer surrounding the semiconducting electrodes and the field grading layer, —wherein the first semiconducting electrode is positioned across a first boundary between the first length of exposed outer semiconductive layer and the length of exposed insulating layer, —wherein said second semiconducting electrode (160) is electrically connected with said length of exposed electric conductor (20), —a tubular insulating body adapted to house said power cable and said electric field control element.