The invention discloses a novel crystal-bonding film, which is characterized in that it includes nano-metal powder, antioxidant, flux, stabilizer, and active agent; the content of the nano-metal powder is 40-95.0wt.%, and the content of the antioxidant is 1 –50wt.%, the flux content is 1-50.0wt.%, and the total amount of flux, stabilizer and active agent is ≤10.0wt.%. Nano-metal powder, antioxidant, flux and other materials are mixed and pressed to form a film, which can achieve high heat dissipation, uniform thickness, and good control of the flatness of the die-bonding layer, without affecting the electrical performance of the semiconductor packaging interconnection module. Die bonding and interconnection under low temperature conditions, and can be used under conditions such as small spacing, high power, high temperature and high pressure. The die-bonding film can be used in power electronics applications, IGBT packaging, optoelectronic packaging, MEMS packaging, microelectronics, high-power LED packaging and other fields.