55results about How to "Good component properties" patented technology

The invention discloses a pixel structure, comprising a substrate, a grid, an insulating layer, a metal oxide semiconductor layer, a source, a drain, at least a film layer and a first electrode layer, wherein the grid is positioned on the substrate; the insulating layer covers the grid; the metal oxide semiconductor layer is positioned on the insulating layer above the grid; the source and the drain are positioned on the metal oxide semiconductor layer; the film layer covers the metal oxide semiconductor layer and comprises a transparent photocatalyst material which blocks the light in the ultraviolet light band from penetrating through the metal oxide semiconductor layer; and the first electrode layer is electrically connected with the source or the drain. The invention simultaneously discloses a manufacturing method of the pixel structure and a manufacturing method of an electronic device.

The present invention discloses an array substrate and a method for manufacturing a polycrystalline silicon layer, wherein the method comprises the steps of forming a first buffer layer on a flexible layer, forming a first barrier layer on the first buffer layer, forming a second buffer layer on the first barrier layer, forming a second barrier layer on the second buffer layer, forming an amorphous silicon layer on the second barrier layer, and converting the amorphous silicon layer into the polycrystalline silicon layer through laser.

A semiconductor device manufacturing method and a cleaning apparatus for stripping a resist provide a semiconductor device having excellent element characteristics with a sufficient yield in the following manner, after dry etching of a photolithography process, the resist is removed by wet cleaning agent, and sufficiently removes particles or metal impurities without damaging fine patterns. A method for manufacturing a semiconductor device includes forming a resist pattern on a film provided for a semiconductor substrate, forming a fine pattern of a conductive film using the resist pattern as a mask while performing dry etching, supplying a resist stripping solution to The fine pattern formation surface of the semiconductor substrate is processed by a single wafer system to remove the resist pattern, and to perform the rinsing process of the semiconductor substrate.

The invention provides a substrate for a thin film transistor (TFT) array and a method for manufacturing the same. The substrate for the TFT array comprises the substrate, a plurality of multicrystal silicon islands and a plurality of grid electrodes, wherein the substrate has a display zone, a grid electrode drive zone and a source electrode drive zone; the multicrystal silicon islands are arranged on the substrate, and each multicrystal silicon island has a source electrode zone, a drain electrode zone and a channel zone positioned between the source electrode zone and the drain electrode zone; moreover, the multicrystal silicon islands comprise a plurality of first multicrystal silicon islands and second multicrystal silicon islands, wherein the first multicrystal silicon islands are arranged inside the display zone and the grid electrode drive zone, and have major grain boundaries and minor grain boundaries, and the major grain boundaries is only positioned inside the source electrode zone and / or the drain electrode zone; the second multicrystal silicon islands are arranged inside the source electrode drive zone; the size of grain inside the first multicrystal silicon islands is different from that inside the second multicrystal silicon islands; and the grid electrodes are arranged on the substrate and are corresponding to the channel zone.

The invention discloses a thin film transistor and a manufacturing method thereof. The thin film transistor comprises a substrate, a semiconductor layer, a patterning doped semiconductor layer, a source electrode, a drain electrode, a grid isolating layer and a grid electrode, wherein the semiconductor layer is arranged on the substrate; the patterning doped semiconductor layer is arranged above two opposite sides of the semiconductor layer; the source electrode and the drain electrode are arranged on the patterning doped semiconductor layer and above two opposite sides of the semiconductor layer; a part of the semiconductor layer covered by the source electrode and the drain electrode has a first thickness, a part of the semiconductor layer, which is positioned between the source electrode and the drain electrode and not covered by the source electrode and the drain electrode, has a second thickness, and the second thickness is between 200 angstroms and 800 angstroms; the grid isolating layer is arranged on the source electrode, the drain electrode and a part of semiconductor layer; and the grid is arranged on the grid isolating layer. The thin film transistor provided by the invention has better element characteristics.

The invention provides a polycrystalline silicon film making method, using the phenomenon that as an ordinary polycrystalline silicon layer is formed, its surface saliences have different heights, and using partiall higher saliences to generate crystal seeds used in the following crystallizing step, therefore able to make the new formed polycrystalline silicon film have uniform and bigger crystal particles and have fewer lower-density saliences, and further have better surface flatness.

In the method, a shallow ditch is formed on surface of a silicon base material and to implant simultaneously buried ion and anti-punch through dopand in the silicon base material and array region of internal memory storage unit. The buried ion doping region is defined and multiditch is formed at array region of the storage unit. Then, a gate-oxide and a patternized polysilicon grid are formed at the silicon base material and furthermore multitransistor can be formed at peripheral circuit region of the silicon base material.

The invention discloses a method for manufacturing a solar battery, including following steps of: firstly providing a substrate and forming a substrate electrode on the substrate; forming a CIGS crystallizing layer on the substrate electrode; processing a chemo mechanical grinding technology on the surface of the CIGS crystallizing layer so as to flatten the CIGS crystallizing layer; forming a buffer layer on the flattened CIGS crystallizing layer surface; and forming a transparent conductive layer on the buffer layer. Therefore, the method for manufacturing the solar battery facilitates volume production and the manufactured solar battery has the good element performance.

The invention relates to a manufacture method of a storage device. The manufacture method comprises the steps of providing a substrate, wherein the substrate comprises a storage unit area and a peripheral area; forming a plurality of first grid electrodes in the storage unit area and forming at least one second grid electrode in the peripheral area; forming a sacrifice layer on the substrate; forming a first stop layer on the sacrifice layer in the storage unit area; carrying out the etching process by adopting the first stop layer as a mask; sequentially forming a second stop layer on the substrate; depositing a dielectric material on the second stop layer; carrying out the flattening process for the dielectric material by adopting the first stop layer and the second stop layer in the storage unit area as a grinding stop layer; removing the first stop layer and the second stop layer in the storage unit area; removing the sacrifice layer in the storage unit area so as to forming a plurality of first contact openings among the first grid electrodes after the first stop layer and the second stop layer are removed. The stop layers in different thicknesses are formed in the storage unit area and the peripheral area, so that a landing area contacting a plug is not compressed while the size of the storage device is further reduced.

The invention discloses an integrated transformer which comprises a first coiling, a second coiling and a plurality of bridging lines, wherein the first coiling is formed by a first metallic layer and has a plurality of disconnected sections, the second coiling is formed by a second metallic layer and has a plurality of disconnected sections, the bridging lines are formed by a third metallic layer. Some of the bridging lines connect the sections of the first coiling, so that the sections of the first coiling form a first inductor. Other bridging lines connect the sections of the second coiling, so that the sections of the second coiling form a second inductor.

An integrated transformer comprises a first inductor and a second inductor, the first inductor comprises B circles of spiral wirings formed by a first metal layer and A circles of wirings formed by a second metal layer, and the A circles of the wirings formed by the second metal layer is overlapped with the innermost A circles of the wirings of the B circles of the spiral wirings formed by the first metal layer; and the second inductor comprises C circles of wirings formed by at least the second metal layer, the C circles of the wirings, formed by the second metal layer, of the second inductor are substantially overlapped with the partial wirings formed by the first metal layer, A is less than B, and A is less than C.

A display device includes a driving substrate, a plurality of light emitting elements, and a plurality of metal common electrodes. The light emitting elements are dispersively arranged on the drivingsubstrate, and each light emitting element includes an epitaxial structure layer and a first type electrode and a second type electrode arranged on the epitaxial structure layer. A metal common electrode is dispose dispersedly on that drive substrate and contacts a portion of the second type electrode of each light emit element to form an ohmic contact.

A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.

The invention provides an optical profile type touch panel, a manufacturing method therefor, and an optical profile type touch display panel. The optical profile type touch panel comprises an infrared light filter layer disposed on an internal surface of a substrate, a first patterning conducting layer comprises grid electrodes and scanning lines which are disposed on the internal surface of the substrate, a first dielectric layer which covers the grid electrodes and the scanning lines, a path layer disposed on the first dielectric layer and located above the grid electrodes, a second patterning conducting layer comprising source electrodes and drain electrodes which are arranged at two sides of the path layer, a transparency electrode disposed on the infrared light filter layer and electrically connected with one of the source electrode and the drain electrode, a second dielectric layer which covers the second patterning conducting layer and part of the transparency electrode, an infrared light sensing layer disposed on the transparency electrode, and a patterning shading conducting layer comprising a sensing electrode disposed on the infrared light sensing layer and a shading electrode disposed on the second dielectric layer and aligned to the path layer. The optical profile type touch panel has an excellent penetration rate and response rate,

Disclosed are an image display device and an organic EL element, each of which involves at least a polyimide film substrate and an ITO electrode formed on the substrate, wherein the ITO electrode is a polycrystalline ITO electrode and the polyimide film contains a repeating unit represented by formula [1] in an amount of at least 10 mol%. Each of the image display device and the organic EL element involves a flexible polyimide film and has excellent element properties including light emission luminance. (In the formula, R1 and R2 independently represent a hydrogen atom, a halogen atom, or an alkyl group having 1 to 5 carbon atoms; R3, R4 and R5 independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 5 carbon atoms, an alkoxyl group having 1 to 5 carbon atoms, a cycloalkyl group having 3 to 7 carbon atoms, a nitril group, or a carboxyl group; and n represents a integer.)

The present invention discloses a semiconductor element and a manufacturing method thereof. The manufacturing method comprises the steps of: forming a grid electrode on a substrate; forming a source electrode and a drain electrode above or below the grid electrode; forming a first insulating layer for covering the source electrode and the drain electrode; forming a semiconductor layer between the source electrode and the drain electrode; patterning the first insulating layer for at least covering the drain electrode; forming a second insulating layer on the patterned first insulating layer; etching the second insulating layer to form a second opening which exposes the patterned first insulating layer and is arranged above the drain electrode, wherein, an etching selection ratio, i.e., the second insulating layer / the patterned first insulating layer, is greater than 1; performing wet etching for the patterned first insulating layer via the second opening, so as to form a first opening which is communicated with the second opening and exposes the drain electrode; and forming a pixel electrode which is electrically connected with the drain electrode via the first opening and the second opening.

It is an object of the present invention to provide a cylindrical sintered body, a cylindrical sputtering target, and a method for producing the same in a cylindrical axis direction of 470 mm or more. A method of manufacturing a cylindrical sputtering target according to an embodiment of the present invention is a method of manufacturing a cylindrical sputtering target having a cylindrical sintered body in which a cylinder having a cylinder length of 600 mm or more The shaped body is disposed on a pedestal provided with an oxygen supply port connected to a pipe for oxygen supply and is provided on a pedestal having a length slightly smaller than an inner circumference of the cylinder provided inside the cylinder of the cylindrical molded body Cylinder axis direction of oxygen at the same time sintering. In another embodiment, it is also possible to arrange the pedestal in the chamber, and the piping for oxygen supply is connected from the outside of the chamber to the oxygen supply port.

The invention discloses a production method of a thin film transistor, which comprises the following steps of: providing a base plate firstly; forming a sacrificial layer on the base plate; forming a multicrystal silicon pattern layer on the base plate to surround the sacrificial layer; and then forming a gate insulation layer large enough to cover the multicrystal silicon pattern layer at least. Additionally, a gate pattern is formed on the gate insulation layer above the multicrystal silicon pattern layer and a source electrode region, a drain electrode region and an active region are formed on the multicrystal silicon pattern layer and the active region is positioned between the source electrode region and the drain electrode region. Furthermore, a protection layer is formed to cover the gate pattern and partial gate insulation layer. And then a source electrode conducting layer and a drain electrode conducting layer are formed on the protection layer and electrically connected with the source electrode region and the drain electrode region of the multicrystal silicon pattern layer respectively.

The invention discloses an integrated transformer which comprises a first coiling, a second coiling and a plurality of bridging lines, wherein the first coiling is formed by a first metallic layer and has a plurality of disconnected sections, the second coiling is formed by a second metallic layer and has a plurality of disconnected sections, the bridging lines are formed by a third metallic layer. Some of the bridging lines connect the sections of the first coiling, so that the sections of the first coiling form a first inductor. Other bridging lines connect the sections of the second coiling, so that the sections of the second coiling form a second inductor.

An integrated transformer comprises a first inductor and a second inductor, the first inductor comprises B circles of spiral wirings formed by a first metal layer and A circles of wirings formed by a second metal layer, and the A circles of the wirings formed by the second metal layer is overlapped with the innermost A circles of the wirings of the B circles of the spiral wirings formed by the first metal layer; and the second inductor comprises C circles of wirings formed by at least the second metal layer, the C circles of the wirings, formed by the second metal layer, of the second inductor are substantially overlapped with the partial wirings formed by the first metal layer, A is less than B, and A is less than C.

An organic light-emitting compound according to the present invention has superb hole and electron transport characteristics, excellent ability to maintain blue light emission, superb light-emitting efficiency, high color purity and efficiency and long lifespan characteristics, and thus can impart superb characteristics to an element when used in an organic light-emitting element.

The organic light-emitting compound of the present invention can exhibit excellent device characteristics when applied to organic light-emitting devices due to its excellent hole and electron transport properties, blue luminescence maintenance and luminous efficiency, high color purity, high efficiency and long life.