Power gate placement techniques in three-dimensional (3D) integrated circuits (ICs) (3DICs) are disclosed. Exemplary aspects of the present disclosure contemplate consolidating
power gating circuits or cells into a single tier within a 3DIC. Still further, the
power gating circuits are consolidated in a tier closest to a
voltage source. This closest tier may include a backside
metal layer that allows a distance between the
voltage source and the
power gating circuits to be minimized. By minimizing the distance between the
voltage source and the power gating circuits,
power loss from routing elements therebetween is minimized. Further, by consolidating the power gating circuits in a single tier, routing distances between the power gating circuits and downstream elements may be minimized and
power loss from those routing elements are minimized. Other advantages are likewise realized by placement of the power gating circuits according to exemplary aspects of the present disclosure.