The invention provides a gate drive circuit capable of enhancing circuit drive ability. The gate drive circuit capable of enhancing the circuit drive ability comprises nine transistors from a first one to a ninth one, wherein a control end of the first
transistor is connected with an n-1th level gate drive
signal, a second end of the first
transistor is electrically connected with first control
voltage, a control end of the second
transistor is connected with an n+1th level gate drive
signal, a first end of the second transistor is connected with second control
voltage, a control end of the third transistor is connected with a first
clock pulse
signal, a second end of the third transistor is connected with a first
direct current source, a control end of the forth transistor is connected with a second
clock pulse signal, and a first end of the forth transistor is coupled with a second
direct current source. Compared with the prior art, the forth transistor is arranged on the gate drive circuit capable of enhancing the circuit drive ability so as to avoid
voltage reduction caused by stray
capacitance, and furthermore the second
direct current source can restrain leakage currents in the transistors, and duration of
high potential of nodes is prolonged. Accordingly, large
capacitance in the gate drive circuit capable of enhancing the circuit drive ability can be omitted, and the size of a board arrangement space occupied by the gate drive circuit capable of enhancing the circuit drive ability is reduced.