31results about How to "Effective masking" patented technology

The invention relates to a peroxyacetic acid stabilizing synergistic agent for bleaching flax fibers. The prior stabilizers can not meet the requirements of industrial production for stabilizing peroxyacetic acid and have higher cost, so the peroxyacetic acid can not get wide application in the bleaching industry. The stabilizing synergistic agent comprises the following components: 3-10 percent of sodium silicate, 0-2 percent of sodium stannate, 2-5 percent of sodium pyrophosphate, 0.1-0.5 percent of ammonium vanadate which is used as a peroxyacetic acid oxidation catalyst, and the balance ofcorn starch oxydrolysis products. In the peroxyacetic acid stabilizing synergistic agent, the corn starch oxydrolysis products are served as the main component of the stabilizer, the peroxyacetic acid is stabilized through the action of complexing metal ions, dispersing solid pollutants and stabilizing the pH value of a bleaching system; the sodium silicate, the sodium stannate, the sodium pyrophosphate, and the like are complemented to form a compound stabilizer; and the ammonium vanadate is used as the peroxyacetic acid oxidation catalyst to form the peroxyacetic acid stabilizing synergistic agent. The product can be used as the peroxyacetic acid stabilizing synergistic agent during bleaching flax fibers.

The invention discloses a radio frequency silicon on insulator(SOI) laterally diffused metal oxide semiconductor (LDMOS) device provided with a low potential barrier body lead-out, which comprises a bottom layer silicon, a concealed oxide layer, a top layer silicon, a P-region, a N-region, a gate oxide layer, a polysilicon gate layer, a gate polycrystalline silicon carbide layer, a gate electrode, a side wall, a N-drift region, a drain region, a drain region silicate layer, a leakage electrode, a source region, a low potential barrier body lead-out region, a body region, a source region silicide layer, and a source electrode. In the invention, the radio frequency LDMOS device is manufactured on an SOI substrate, and a low potential barrier body lead-out is in a short circuit with the source region is formed by utilizing a heavily doped region homotypic with the P- region; the source / body, leakage / body as well as a gate is interconnected with each electrode by utilizing a silicide; a plurality of grate bars are in interdigital type parallel connection so as to enlarge the driving power of the device; and the invention provides a method for rectifying, back gate injection, N-regioninjection as well as N-drift region injection compatible with a complementary metal-oxide-semiconductor (CMOS) technology, as well as a N-drift region silicide conceal method compatible with the CMOStechnology.

The invention provides a pepsinogen I (PGI) assay kit, the kit contains reagent R1 and reagent R2; reagent R1 contains the following components: piperazine-1,4-diethanesulfonic acid (PIPES) buffer, NaCl , sodium hydroxide, surfactants, preservatives. Reagent R2: piperazine-1,4-diethanesulfonic acid (PIPES) buffer, mouse anti-human PGI antibody coated latex particles, suspending agent, stabilizer, preservative. The invention also provides the preparation method and application of the kit. The kit can effectively avoid the interference of chylomicrons, and adopts different kinds of protective agents and suspending agents at the same time. It has strong stability, high sensitivity and good repeatability. Low cost liquid kit.

The invention discloses a method for measuring potassium by the sodium tetraphenylborate turbidimetry and a masking agent which is used by the method. The masking agent is a water solution containing 0.01 to 0.04mol / l of Cu<2+>, 0.04 to 0.10mol / l of tartaric acid and 5 to 10mol / l of H<+>; the method for measuring the potassium by the sodium tetraphenylborate turbidimetry is that: the masking agent is used for masking ammonium ion and other interfering ions in liquid under test, basic EDTA disodium salt solution is further added to carry out the auxiliary masking, basic sodium tetraphenylborate water solution is finally added, and the turbidity measurement is immediately carried out after shaking the reaction solution well. The measurement method has the advantages of simple operation, rapid and accurate measurement and low cost; the linear range thereof meets the requirements of the rapid measurement, which is suitable for the application of grass roots and agriculture popularization departments; and the masking agent used does extremely small harm to the human body and the environment.

The present invention is preparation process of theasaponis sterilant for preventing and controlling rat plague. The theasaponis sterilant is prepared with tea seed cake as main material, and through extracting with water solution of hydrophilic solvent at 50-80 deg.c for 1-3 times, merging the extracted liquid and filtering; membrane separating the filtrate to eliminate impurity and concentrating to 10-15 Baume degree (60 deg.c); adding 4 wt% concentration water solution of sodium alginate in the same weight as the concentrate; dropping the mixture into 4 wt% concentration water solution of calcium chloride in the same weight; stilling at 4-10 deg.c for 8-12 hr to cure and shape; sieving grains of diameter 4-6 mm and drying to obtain the theasaponis sterilant. The preparation process is novel, simple, efficient and low in production cost, and the theasaponis sterilant has high efficiency in preventing and controlling rat plague, low toxicity and other advantages.

The invention relates to the field of a radio frequency power device, and discloses a radio frequency SOI LDMOS device with close body contact. The device comprises bottom layer silicon, an embedding oxidation layer, top layer silicon, a P<-> region an N<-> region, a gate oxidation layer, a polysilicon gate layer, a gate poly-silicide layer, a gate electrode, a silicon nitride side wall, an N<-> drift region, a drain region, a drain region silicide layer, a drain electrode, a source region, a body contact region, a body region, a source region silicide layer and a source electrode. The radio frequency LDMOS device is manufactured on an SOI substrate, and forms the close body contact which is in short circuit with the source region by utilizing a heavily doped region in the same form as the P<-> region; the source / body, a drain / body and the gate and the electrodes are interconnected by the silicide; a plurality of gate bars are connected in parallel in the forked mode so as to improve the driving capability of the device; a method for adjustment, back-gate injection, N<-> region injection and N<-> drift region injection, which is compatible with the CMOS process, is designed; and amethod for hiding the silicide in the N<-> drift region, which is compatible with the CMOS process, is designed.

The invention relates to the field of radio frequency power devices, and discloses a radio frequency SOI LDMOS device with H-shaped gate. The device comprises bottom layer silicon, an embedding oxide layer, top layer silicon, a P<-> region, an N<-> region, an H-shaped gate oxide layer, an H-shaped polysilicon gate layer, an H-shaped gate poly-silicide layer, a gate electrode, a silicon nitride side wall, an N<-> drift region, a drain region, a drain region silicide layer, a drain electrode, a source region, a body lead-out region, a source region silicide layer and a source electrode. The radio frequency LDMOS device is manufactured on an SOI substrate, and forms the body lead-out which is in short circuit with the source region by utilizing a heavily doped region in the same form as the P<-> region; the source / body, a drain / body and the gate and the corresponding electrodes are interconnected by the silicide; and a plurality of gate bars are connected in parallel in the forked mode so as to improve the driving capability of the device. Simultaneously, the invention discloses a method for adjustment, back-gate injection, N<-> region injection and N<-> drift region injection, whichis compatible with the CMOS process and a method for hiding the silicide in the N<-> drift region, which is compatible with the CMOS process.

The invention discloses an equipment and facility safety inspection intelligent patrolling operation system and an application method thereof. The system consists of a handheld wireless interconnection security patrolling device, a radio frequency identification (RFID) label card reader module and a central server, wherein a passive RFID label is distributed on a security facility in a closed space; the label number and three-dimensional (3D) virtual digital modeling data of the closed space are input into a computer system and / or a server by utilizing a global information system (GIS); when an inspector enters the closed space to inspect by carrying the handheld wireless interconnection security patrolling device; and identification codes stored in the passive RFID label, use information of related security facility and equipment and location information thereof, and to-be-collected data which are collected by the security equipment through manual and automatic wireless sensing and collected by manual artificial detection are uploaded to the central server or transmitted to the computer system by the handheld wireless interconnection security patrolling device automatically, and are determined by the central server or the computer system. The system prompts and monitors the inspectors to maintain the security facility and equipment in time, so that the safety, effectiveness and reliability of the security facility and equipment can be improved.