33results about How to "Ease bending" patented technology

This anisotropic conductive film (100) has a structure wherein conductive particles (2) are dispersed or arranged in a regular pattern in an insulating binder layer (1). One surface of this anisotropic conductive film (100) is partially provided with a low-adhesion region (3) that has a lower adhesion strength than the insulating binder layer (1). The low-adhesion region (3) is a region where a recess (10), which is formed in the insulating binder layer (1), is filled with a low-adhesion resin.

The invention relates to a high-safety fuel rod. The high-safety fuel rod comprises a rod body which comprises a rod-like metal substrate, fuel particles dispersed in the metal substrate and a fuel-free layer, wherein the periphery of the metal substrate is coated with the fuel-free layer, and the hardness of the fuel-free layer is higher than that of the metal substrate. The preparation method of the rod body comprises the following steps that A, the fuel particles are mixed with metal substrate powder, and a substrate green blank is prepared; B, the periphery of the substrate green blank is coated with a certain thickness of hard powder which forms a rod body green blank with the substrate green blank; C, the rod body green blank is sintered, and the rod body is formed. According to the high-safety fuel rod, a fuel-free area with high hardness is arranged on the periphery, the strength of the fuel rod is improved, machining is convenient, the size is convenient to control, the corrosion reaction is alleviated, release of hydrogen is reduced, and the safety is improved.

The invention relates to a high-voltage rapid-soft-recovery diode. The high-voltage rapid-soft-recovery diode comprises an active area and a terminal area. A p buffering layer, a p+ anode layer and an anode aluminum electrode are upwards arranged on the upper surface of an n-substrate layer of the active area in sequence. An active n buffering layer and a cathode aluminum electrode layer are downwards arranged in sequence with the lower surface of the n-substrate layer as the base. The high-voltage rapid-soft-recovery diode further comprises an active p+ adjusting area and two n+ cathode areas, wherein the active p+ adjusting area and the two n+ cathode areas are arranged between the active n buffering layer and the cathode aluminum electrode layer, two n+ cathode areas are equal in width, and the active p+ adjusting area is arranged between the two n+ cathode areas. According to the high-voltage rapid-soft-recovery diode, trenches are adopted by the upper surface of the terminal portion, a high-concentration area on the surface of a p-type field limiting ring is eliminated selectively, bending of a pn junction can be relieved, the surface electrical field can be reduced, the terminal breakdown voltage can be increased easily, and the terminal size is small; current concentration at the junction position of the active area and the terminal area in a breakover period can be easily relieved through the p+ adjusting area located on the lower surface of the terminal portion, and reverse recovery softness factors can be increased easily.

Tooling used in a punching process which uses a die and projecting punch to form a worked material of steel sheet into a predetermined outer shape, in which tooling for punching, a radius of curvature Rd of a die cutting edge is from 0.03 mm to 0.2 mm and an angle (α) formed by a tangent drawn from a punch cutting edge to a projection shoulder and a direction perpendicular to a direction of movement of the punch is from 12° to 72°, and a punching method and shaping method using the same, are provided. Further, when making the die cutting edge (shoulder R part) a two-stage R of radii of curvature R1 and R2 and making a slant of a line passing through the centers of R1 and R2β, by making 0.03 mm≤R1≤0.2 mm, 1≤R2 / R1≤5, 0≤R2(1−sin β1)≤0.3t, and 30°≤β≤90°, punching hole expandability can be improved.

A quantum well combination LED epitaxial structure with high luminous efficiency and a preparation method thereof, the epitaxial structure is a substrate, a buffer layer, a non-doped GaN layer, an n-type AlGaN layer, an n-type GaN layer, an active Layer, P-type AlGaN layer, P-type GaN layer and P-type InGaN contact layer, the active layer includes the lower multi-quantum well structure, constant temperature multi-quantum well structure and upper multi-quantum well structure, the lower multi-quantum well structure is InGaN potential well layer The constant temperature multi-quantum well structure is composed of the periodic superposition of the constant temperature InGaN potential well layer and the constant temperature GaN potential well layer, and the upper multi-quantum well structure is the periodic superposition of the InGaN potential well layer and the GaN barrier layer Composition; the preparation method is to prepare each layer sequentially from bottom to top in the reaction chamber of metal organic chemical vapor deposition equipment. The invention can effectively reduce the stress between the well-barrier interface, ease the bending of the energy band, and improve the injection efficiency of holes and electrons into the active region and the radiation recombination efficiency.

The invention relates to an InGaN / AlGaN-GaN based multiple-quantum well structure and a preparation method thereof. In the preparation method, InGaN for fixing the In component is taken as a well layer, different AlGaN-GaN are used as barrier layers including an AlGaN barrier layer for fixing the Al component, an AlGaN barrier layer with the Al component continuously reduced along a growth direction, and a GaN barrier layer. The InGaN / AlGaN-GaN based multiple-quantum well structure is capable of effectively relieving stress at the barrier and well interface, reducing bending of energy bands, controlling electron and hole radiative recombination regions and improving electron and hole injection efficiency and radiative recombination efficiency, thereby facilitating achievement of GaN based LED structures with good crystal quality, high internal quantum efficiency and high luminous efficiency.

The anisotropic conductive film (100) of the present invention has a structure in which conductive particles (2) are dispersed or arranged in a regular pattern in an insulating adhesive layer (1). A low-adhesive region (3) having an adhesive strength lower than that of the insulating adhesive layer (1) is formed on a part of one surface of the anisotropic conductive film (100). The low-adhesive region (3) is a region where the recess (10) formed on the insulating adhesive layer (1) is filled with a low-adhesive resin.

The invention discloses an InGaN / AlInN quantum well laser, comprising a substrate, a buffer layer, a lower covering layer, a lower V-shaped waveguide layer, an active region, an electronic blocking layer, an upper V-shaped waveguide layer, an upper covering layer, an ohmic contact layer and electrodes; both the upper V-shaped waveguide layer and the lower V-shaped waveguide layer are of AlGaN material, and the active region is an InGaN / AlInN quantum well layer. The InGaN / AlInN quantum well laser uses the AlGaN material as the waveguide layer and the active region, the AlInN material as a barrier layer and InGaN as a well layer, lattice mismatch of the materials is decreased, weak polarization occurs to the active region, polarization field and cavity face loss is low, threshold current islow, and the InGaN / AlInN quantum well laser has excellent optical properties.

The invention relates to an InGaN-based multi-quantum well structure. Multilayer structures in which In constituent gradual increase quantum well layers and Si-doped GaN barrier layers are arranged alternately are successively grown on a GaN barrier layer. Then, along a growth direction, multiplayer structures in which fixed-In-constituent quantum well layers, In constituent gradual decrease quantum well layers, and GaN barrier layers are arranged periodically are further grown. Therefore, the InGaN-based multi-quantum well structure may effectively alleviate stress at the interface between a barrier and a well and curving of an energy band, control a radiation recombination area of electrons and electron holes, increase the injection efficiency and the radiation recombination efficiency so as to be beneficial to further acquisition of a GaN-based LED structure with good crystal quality, high internal quantum efficiency, and high light-emitting efficiency. In addition, the light-emitting peak of the GaN-based LED structure has a low full width at half maximum and uniform wavelengths of emitted light.