33results about How to "Ease bending" patented technology

The invention discloses a light-emitting diode epitaxial wafer and belongs to the technical field of semiconductors. The epitaxial wafer comprises a substrate, and a buffer layer, a non-impurity-doped GaN layer, an N-type layer, a multi-quantum well layer and a P-type layer which successively cover the substrate. The multi-quantum well layer is of a multi-period structure, and each period structure comprises a quantum well layer and a quantum barrier layer covering the quantum well layer. The quantum barrier layer closest to the P-type layer is of a superlattice structure. The superlattice structure comprises a plurality of AlxGal-xN sub-layers and GaN sub-layers which grow in an alternating manner, wherein x is larger than zero and less than 1, and the components of Al in the AlxGal-xN sub-layers gradually changes with the growth sequence. According to the invention, the quantum barrier layer, closest to the P-type layer, in the multi-quantum well layer of the epitaxial wafer is set as the superlattice structure, electronic overflow is effectively prevented on one hand, and on the other hand, the cavity injection rate is increased, so that the internal quantum efficiency of the epitaxial wafer is further increased, and the light-emitting efficiency of the light-emitting diode is improved.

The invention belongs to the technical field of nuclear fuel assemblies of nuclear power stations, and particularly relates to a graded buffering high-shock-resistance bending-resistance pipe-in-pipe type guide pipe and a fuel assembly. The guide pipe is composed of an outer pipe, an inner pipe and an end plug, the inner pipe is sleeved with the outer pipe, the bottom end of the inner pipe and the bottom end of the outer pipe are fixedly connected with the end plug, overflow holes are formed in the outer pipe and located at the upward position of the upper end of the inner pipe, and a plurality of bypass flow holes are formed in the position, close to the bottom, of the outer pipe in the radial direction. A plurality of buffer holes are formed in the inner pipe in the radial direction; the inner pipe is connected with the outer pipe through a plurality of connecting parts in the length direction. The overflow hole is formed in the outer pipe and located at the upward position of the upper end of the inner pipe, so that water in the guide pipe rapidly overflows when rod falling begins, and rapid rod falling is achieved; a plurality of drain holes formed in the inner pipe in the radial direction are matched with drain holes in the bottom of the end plug to achieve hydraulic buffering; crevice corrosion is relieved through an outer pipe bypass flow hole; the equivalent stiffness and the bearing capacity are improved through the multiple connecting parts, and the shock resistance and the bending resistance under high fuel consumption of the fuel assembly are improved.

The invention discloses a flexible mineral insulating fireproof cable. The flexible mineral insulating fireproof cable comprises a cable core and a sheath layer which wraps the outer side of the cable core. The sheath layer comprises the following raw materials in parts by weight: a base material 80-90 parts, a vulcanization system 2.2-2.9 parts, vinyl-terminated polydimethylsiloxane 1-2 parts, a composite filling material 40-70 parts, dibutyl tin dilaurate 0.5-1.5 parts, epoxy cotton seed butyl oleate 1-3 parts, phenyl petroleum sulfonate 1-2 parts, bis(pentaerythritolester) 1-2 parts, magnesium stearate 0.4-0.9 part, zinc stearate 0.15-0.78 part, an antioxidant 1076 0.4-1 part, 2,2'-thio bis[3-(3,5-di-t-butyl-4-hydroxy phenyl) propionate] 0.15-0.75 part, and diester thiodipropionate 1-2 parts. The flexible mineral insulating fireproof cable is good in thermal stability and excellent in tearing resistance, abrasion resistance and compression resistance, and is quite good in ageing resistance in an extreme environment, high in safety performance and long in shelf life.

This anisotropic conductive film (100) has a structure wherein conductive particles (2) are dispersed or arranged in a regular pattern in an insulating binder layer (1). One surface of this anisotropic conductive film (100) is partially provided with a low-adhesion region (3) that has a lower adhesion strength than the insulating binder layer (1). The low-adhesion region (3) is a region where a recess (10), which is formed in the insulating binder layer (1), is filled with a low-adhesion resin.

The invention relates to a high-safety fuel rod. The high-safety fuel rod comprises a rod body which comprises a rod-like metal substrate, fuel particles dispersed in the metal substrate and a fuel-free layer, wherein the periphery of the metal substrate is coated with the fuel-free layer, and the hardness of the fuel-free layer is higher than that of the metal substrate. The preparation method of the rod body comprises the following steps that A, the fuel particles are mixed with metal substrate powder, and a substrate green blank is prepared; B, the periphery of the substrate green blank is coated with a certain thickness of hard powder which forms a rod body green blank with the substrate green blank; C, the rod body green blank is sintered, and the rod body is formed. According to the high-safety fuel rod, a fuel-free area with high hardness is arranged on the periphery, the strength of the fuel rod is improved, machining is convenient, the size is convenient to control, the corrosion reaction is alleviated, release of hydrogen is reduced, and the safety is improved.

The invention relates to a high-voltage rapid-soft-recovery diode. The high-voltage rapid-soft-recovery diode comprises an active area and a terminal area. A p buffering layer, a p+ anode layer and an anode aluminum electrode are upwards arranged on the upper surface of an n-substrate layer of the active area in sequence. An active n buffering layer and a cathode aluminum electrode layer are downwards arranged in sequence with the lower surface of the n-substrate layer as the base. The high-voltage rapid-soft-recovery diode further comprises an active p+ adjusting area and two n+ cathode areas, wherein the active p+ adjusting area and the two n+ cathode areas are arranged between the active n buffering layer and the cathode aluminum electrode layer, two n+ cathode areas are equal in width, and the active p+ adjusting area is arranged between the two n+ cathode areas. According to the high-voltage rapid-soft-recovery diode, trenches are adopted by the upper surface of the terminal portion, a high-concentration area on the surface of a p-type field limiting ring is eliminated selectively, bending of a pn junction can be relieved, the surface electrical field can be reduced, the terminal breakdown voltage can be increased easily, and the terminal size is small; current concentration at the junction position of the active area and the terminal area in a breakover period can be easily relieved through the p+ adjusting area located on the lower surface of the terminal portion, and reverse recovery softness factors can be increased easily.

Tooling used in a punching process which uses a die and projecting punch to form a worked material of steel sheet into a predetermined outer shape, in which tooling for punching, a radius of curvature Rd of a die cutting edge is from 0.03 mm to 0.2 mm and an angle (α) formed by a tangent drawn from a punch cutting edge to a projection shoulder and a direction perpendicular to a direction of movement of the punch is from 12° to 72°, and a punching method and shaping method using the same, are provided. Further, when making the die cutting edge (shoulder R part) a two-stage R of radii of curvature R1 and R2 and making a slant of a line passing through the centers of R1 and R2β, by making 0.03 mm≤R1≤0.2 mm, 1≤R2 / R1≤5, 0≤R2(1−sin β1)≤0.3t, and 30°≤β≤90°, punching hole expandability can be improved.

A quantum well combination LED epitaxial structure with high luminous efficiency and a preparation method thereof, the epitaxial structure is a substrate, a buffer layer, a non-doped GaN layer, an n-type AlGaN layer, an n-type GaN layer, an active Layer, P-type AlGaN layer, P-type GaN layer and P-type InGaN contact layer, the active layer includes the lower multi-quantum well structure, constant temperature multi-quantum well structure and upper multi-quantum well structure, the lower multi-quantum well structure is InGaN potential well layer The constant temperature multi-quantum well structure is composed of the periodic superposition of the constant temperature InGaN potential well layer and the constant temperature GaN potential well layer, and the upper multi-quantum well structure is the periodic superposition of the InGaN potential well layer and the GaN barrier layer Composition; the preparation method is to prepare each layer sequentially from bottom to top in the reaction chamber of metal organic chemical vapor deposition equipment. The invention can effectively reduce the stress between the well-barrier interface, ease the bending of the energy band, and improve the injection efficiency of holes and electrons into the active region and the radiation recombination efficiency.

The invention relates to an InGaN / AlGaN-GaN based multiple-quantum well structure and a preparation method thereof. In the preparation method, InGaN for fixing the In component is taken as a well layer, different AlGaN-GaN are used as barrier layers including an AlGaN barrier layer for fixing the Al component, an AlGaN barrier layer with the Al component continuously reduced along a growth direction, and a GaN barrier layer. The InGaN / AlGaN-GaN based multiple-quantum well structure is capable of effectively relieving stress at the barrier and well interface, reducing bending of energy bands, controlling electron and hole radiative recombination regions and improving electron and hole injection efficiency and radiative recombination efficiency, thereby facilitating achievement of GaN based LED structures with good crystal quality, high internal quantum efficiency and high luminous efficiency.

The invention discloses a compression system capable of effectively reducing the axial load of a fuel assembly and the fuel assembly. The compression system is arranged at the lower part of the fuel assembly and provides axial support and positioning for the fuel assembly. According to the fuel assembly compression system, the axial compression load borne by the fuel assembly in a reactor can be remarkably reduced, bending of the fuel assembly can be relieved, the stress level borne by all parts is reduced, and the safety margin of the fuel assembly is improved.

The anisotropic conductive film (100) of the present invention has a structure in which conductive particles (2) are dispersed or arranged in a regular pattern in an insulating adhesive layer (1). A low-adhesive region (3) having an adhesive strength lower than that of the insulating adhesive layer (1) is formed on a part of one surface of the anisotropic conductive film (100). The low-adhesive region (3) is a region where the recess (10) formed on the insulating adhesive layer (1) is filled with a low-adhesive resin.

The invention discloses a cable used for wind turbine generators. The cable comprises a cable core and a sheath layer used for coating the external side of the cable core; the sheath layer comprises, by weight, 2 to 4 parts of an anti-oxidant, 3 to 5 parts of isobutyltriethoxysilane, 8 to 12 parts of a plasticizer, 0.8 to 1.4 parts of hexakis(methoxymethyl)melamine, 0.4 to 1 part of ethoxylated trimethylolpropane triacrylate, 2 to 3.6 parts of di(tert-butylperoxy)phthalate, 55 to 65 parts of ethylene-propylene-diene monomer rubber, 40 to 60 parts of polyvinyl chloride, 20 to 30 parts of polyurethane, 60 to 80 parts of a composite filler, 1 to 2 parts of calcium stearate, 1.2 to 1.6 parts of barium stearate, and 1 to 3 parts of zinc naphthenate. The thermal stability of the cable is excellent; mechanical properties are excellent; aging resistance at extreme environment is extremely excellent; safety performance is high; and self life is long.

The invention provides a laser pipe cutting machine which comprises a laser cutting device, a bottom frame, a first clamping device and two second clamping devices. The first clamping device and the second clamping devices are used for clamping a pipe fitting and driving the pipe fitting to rotate. The first clamping device and the two second clamping devices are sequentially arranged on the bottom frame and can slide along the bottom frame. The laser cutting device is connected to the bottom frame in a sliding manner and located above the pipe fitting. According to the laser pipe cutting machine, the first clamping device and the two second clamping devices clamp the pipe fitting together, the problem that the pipe fitting is bent due to self gravity is relieved, the size error between the pipe fitting and the laser cutting device is reduced, and therefore the cutting precision of laser cutting work is improved.

The invention discloses an InGaN / AlInN quantum well laser, comprising a substrate, a buffer layer, a lower covering layer, a lower V-shaped waveguide layer, an active region, an electronic blocking layer, an upper V-shaped waveguide layer, an upper covering layer, an ohmic contact layer and electrodes; both the upper V-shaped waveguide layer and the lower V-shaped waveguide layer are of AlGaN material, and the active region is an InGaN / AlInN quantum well layer. The InGaN / AlInN quantum well laser uses the AlGaN material as the waveguide layer and the active region, the AlInN material as a barrier layer and InGaN as a well layer, lattice mismatch of the materials is decreased, weak polarization occurs to the active region, polarization field and cavity face loss is low, threshold current islow, and the InGaN / AlInN quantum well laser has excellent optical properties.

The invention discloses a light-emitting diode epitaxial wafer and belongs to the technical field of semiconductors. The epitaxial wafer comprises a substrate, and a buffer layer, a non-impurity-doped GaN layer, an N-type layer, a multi-quantum well layer and a P-type layer which successively cover the substrate. The multi-quantum well layer is of a multi-period structure, and each period structure comprises a quantum well layer and a quantum barrier layer covering the quantum well layer. The quantum barrier layer closest to the P-type layer is of a superlattice structure. The superlattice structure comprises a plurality of AlxGal-xN sub-layers and GaN sub-layers which grow in an alternating manner, wherein x is larger than zero and less than 1, and the components of Al in the AlxGal-xN sub-layers gradually changes with the growth sequence. According to the invention, the quantum barrier layer, closest to the P-type layer, in the multi-quantum well layer of the epitaxial wafer is set as the superlattice structure, electronic overflow is effectively prevented on one hand, and on the other hand, the cavity injection rate is increased, so that the internal quantum efficiency of the epitaxial wafer is further increased, and the light-emitting efficiency of the light-emitting diode is improved.

The invention discloses a hot-press sealing paper bag producing machine, and belongs to the field of paper bag making machines. In order to solve the problem of slippage between a cutting knife and fed paper bags, the machine comprises a frame, the frame is provided with a cutting device, the cutting device comprises an upper cutter bar, the upper cutter bar is provided with a circular cutter, andfurther comprises a main shaft, the main shaft is located below the upper cutter bar, a lower cutter groove is formed in the main shaft, the lower cutter groove is disposed corresponding to the circular cutter, and the blade of the circular cutter is in contact with one side wall or both side walls of the notch of the lower cutter groove. The machine is used for producing paper bag products suchas envelope bags, test paper bags, medicine bags and the like.

The invention relates to an InGaN-based multi-quantum well structure. Multilayer structures in which In constituent gradual increase quantum well layers and Si-doped GaN barrier layers are arranged alternately are successively grown on a GaN barrier layer. Then, along a growth direction, multiplayer structures in which fixed-In-constituent quantum well layers, In constituent gradual decrease quantum well layers, and GaN barrier layers are arranged periodically are further grown. Therefore, the InGaN-based multi-quantum well structure may effectively alleviate stress at the interface between a barrier and a well and curving of an energy band, control a radiation recombination area of electrons and electron holes, increase the injection efficiency and the radiation recombination efficiency so as to be beneficial to further acquisition of a GaN-based LED structure with good crystal quality, high internal quantum efficiency, and high light-emitting efficiency. In addition, the light-emitting peak of the GaN-based LED structure has a low full width at half maximum and uniform wavelengths of emitted light.

The invention discloses a bionic air spring system which comprises a passive vibration reduction component, a variable-rigidity variable-damping component, an anti-torsion vibration component, an aperture regulating mechanism and a bearing platform. The passive vibration reduction component is mounted on an environmental foundation; the variable-rigidity variable-damping component is arranged on the upper portion of the passive vibration reduction component; the anti-torsion vibration component is disposed on the periphery of the variable-rigidity variable-damping component; the lower end of the anti-torsion vibration component is fixed into the passive vibration reduction component, the bearing platform is sleeved at the upper end of the anti-torsion vibration component, and the upper end of the variable-rigidity variable-damping component is in contact with the lower surface of the bearing platform. By regulating a lead-screw transmission mechanism, aperture openness of damping holes is regulated, flow rate and velocity of fluid between a main air chamber and an auxiliary chamber are changed, and the rigidity value and the damping value of the air spring system are quantitative and adjustable. Meanwhile, three aerostatic bearings are uniformly distributed along the axis of the bionic air spring system to form the anti-torsion vibration component to simulate the three-point support attitude of both claws and the tail of a woodpecker, so that engineering adaptability and vibration reduction efficiency of bionic air springs are improved.