Limitation-enhanced GaN-based deep ultraviolet laser
A deep ultraviolet and laser technology, applied in the direction of lasers, semiconductor lasers, phonon exciters, etc., can solve the problems of increased activation energy, increased difficulty of P-type doping, and affecting the transmission of hole active regions
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[0023] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but the protection scope of the present invention is not limited thereto.
[0024] Such as figure 1 A confinement-enhanced GaN-based deep ultraviolet laser is shown, from bottom to top are N-type electrode 1, substrate 2, N-type lower confinement layer 3, N-type Al x Ga 1-x N lower waveguide layer 4, active region 5, P-type Al x Ga 1-x N upper waveguide layer 6 , P type electron blocking layer 7 , P type upper confinement layer 8 , P type ohmic contact layer 9 and P type electrode 10 . More specifically:
[0025] The N-type electrode 1 is made of Ti / Al / Ti / Au material with a thickness of 70 / 150 / 70 / 200nm.
[0026] Substrate 2 is an AlN substrate with a thickness of 100 μm.
[0027] N-type lower confinement layer 3 is grown on AlN substrate 2, and the material is Al 0.55 Ga 0.45 N, with a thickness of 2 μm.
[0028] N-type Al is grown on th...
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