35results about How to "Avoid difficult processing" patented technology

A spatial terahertz wave phase modulator based on the high electron mobility transistor is provided. The phase modulator combines the quick-response high electron mobility transistor with a novel metamaterial resonant structure, so as to rapidly modulate terahertz wave phases in a free space. The phase modulator includes a semiconductor substrate, an HEMT epitaxial layer, a periodical metamaterial resonant structure and a muff-coupling circuit. A concentration of 2-dimensional electron gas in the HEMT epitaxial layer is controlled through loading voltage signals, so as to change an electromagnetic resonation mode of the metamaterial resonant structure, thereby achieving phase modulation of terahertz waves. The phase modulator has a phase modulation depth of over 90 degrees within a large bandwidth, and a maximum phase modulation depth is about 140 degrees. Furthermore, the phase modulator is simple in structure, easy to machine, high in modulation speed, convenient to use, and easy to package.

The invention discloses a storage rack assembly for a refrigerator and the refrigerator with the storage rack assembly. The storage rack assembly for the refrigerator comprises shelves and a storage rack. The shelves are suitable for being horizontally arranged in a refrigerating chamber of the refrigerator. The storage rack is arranged on the bottoms of the shelves in the mode of being capable of moving back and forth. The storage rack can be wholly drawn out forwards from the bottoms of the shelves and separated from the shelves. According to the storage rack assembly for the refrigerator, the bottoms of the shelves are provided with the storage rack capable of being drawn, and therefore the internal space utilization rate of the refrigerator is increased; meanwhile, objects on the storage rack are picked and placed conveniently; moreover, the phenomenon that due to the fact that the number of protruding ribs on a refrigerator body is large, machining is not easy can be avoided; in addition, the practicality and the structure novelty of the storage rack assembly are improved.

The invention discloses a terahertz space external phase modulator based on a high electron mobility transistor. The phase modulator combines the quick response type high electron mobility transistor with a novel artificial electromagnetic medium resonant structure, so as to be able to conduct quick phase modulation on terahertz waves transmitted in free space. The phase modulator is composed of a semiconductor material substrate, an HEMT epitaxial layer, a periodical artificial metal electromagnetic resonant structure and a muff-coupling circuit. The concentration of two-dimensional electron gas in the HEMT epitaxial layer is controlled through loaded voltage signals, so that the electromagnetic resonance mode of the artificial electromagnetic medium resonant structure is changed, and then phase modulation of terahertz waves is achieved. Over-90-degree phase modulation depth can be realized within a large bandwidth, and the maximum phase modulation depth can be about 140 degrees. Furthermore, the phase modulator is simple in structure, easy to machine, high in modulation speed, convenient to use and easy to package.

The invention discloses a manufacturing method and device of a light-focusing Fresnel lens. The method provided by the invention comprises the following steps: (1) providing a clean and ultrawhite glass substrate and spraying a selected material on the upper surface of the ultrawhite glass substrate so as to form a coating layer with a preset width; (2) adopting a cylindrical die-pressing roller of which one outer side surface is in the shape of the surface of the light-focusing Fresnel lens to carry out rolling and die-pressing on the coating layer; and (3) curing the coating layer after being rolled and die-pressed. In the manufacturing method of the light-focusing Fresnel lens provided by the invention, the production speed is high, the demoulding is simple, the produced Fresnel lens does not have air holes almost and the practicability is strong.

The invention provides an optical-control external phase modulator of terahertz space and belongs to the technical field of electromagnetic function devices. The external phase modulator provided by the invention is composed of a semiconductor substrate, an artificial micro structure and a controllable dynamic switch. Through application of external optical induction, an electric conduction rate and a dielectric constant of a switch material are changed. Hence, an electromagnetic resonance mode of the artificial micro structure can be changed and thus phase modulation of terahertz waves can be achieved. The phase modulator provided by the invention has the advantages that a phase modulation depth of over 100 DEG within a large bandwidth and maximum phase modulation capacity of over 150 DEG can be achieved; micro-fabrication techniques can be used for implementation, and the preparation technology is mature and reliable; and a dynamic phase control device which combines a semiconductor material and an artificial microstructure array is achieved, the switch material can be selected from multiple types of high-performance semiconductor materials, multiple control modes can be selected, and the phase modulator has very high practical application values in fields such as terahertz wireless communication, terahertz spectrum technology and terahertz security check imaging.

The invention discloses a terahertz multiband modulator based on a high electron mobility transistor, belongs to the technical field of an electromagnetic functional device, especially for a rapid dynamic functional device of a terahertz waveband. The HEMT (High Electron Mobility Transistor) and Metamaterials are combined; the Metamaterials are designed optimally and comprise various complex resonant modes; the high speed dynamic feature of the HEMT and the precise control capacity of the Metamaterials to electromagnetic waves are utilized; the distribution change of two-dimensional electron gas in the HEMT is controlled through an impressed voltage; further the resonant mode conversion of the artificial Metamaterials is controlled; the HEMT terahertz modulator has modulation effects of high modulation depth and high modulation efficiency in modulation frequency bands of four amplitudes; and moreover, the phase modulation depth in a phase modulation frequency band reaches more than 90 degrees.

The invention relates to the technical field of liquid crystal display, and provides a backlight unit, a backlight source, a backlight source control method and a display device. The backlight unit consists of an LED (Light-Emitting Diode) and a light guide plate, wherein the light guide plate comprises a light introducing surface and a light emitting surface which is opposite to the light introducing surface; and light rays emitted by the LED enter the light introducing surface of the light guide plate, and are emitted from the light emitting surface of the light guide plate. The light guide plates and the LED construct a plurality of independent backlight units, and light rays emitted by the LED are scattered possibly through a plurality of light guide plates, so that the light mixing distance is reduced remarkably, the thickness of a device is reduced, and the problem of processing difficulty of a large-sized light guide plate is solved. Moreover, a plurality of backlight units are controlled separately, so that an entire backlight light source is controlled dynamically in real time, and the aims of lowering power consumption and increasing contrast are fulfilled.

The invention discloses a light emitting diode module which comprises a ceramic substrate, a circuit layer, at least one light emitting element and a driving circuit element. The ceramic substrate is provided with a groove formed in the upper surface of the ceramic substrate, the circuit layer is arranged on the upper surface of the ceramic substrate, the light emitting element is arranged in the groove and electrically connected with the circuit layer, and the driving circuit element is arranged on the upper surface of the ceramic substrate and electrically connected with the circuit layer. Due to the fact that the ceramic substrate provided with the groove when formed is provided, the difficulty that the high-hardness ceramic substrate is hard to machine can be effectively avoided. Due to the fact that sealing glue is contained in the groove, the sealing glue is easily positioned and forms a lens shape.

The invention provides a battery pack structure and an electric vehicle, and relates to the technical field of a battery structure of the electric vehicle. The battery pack structure comprises a negative electrode aluminum row, a lower supporting frame, a cell, an upper supporting frame and a positive electrode aluminum row, wherein the negative electrode aluminum row is fixedly connected with the lower supporting frame; the lower supporting frame is fixedly connected with the upper supporting frame; the upper supporting frame is fixedly connected with the positive electrode aluminum row; and the cell is fixedly mounted between the lower supporting frame and the upper supporting frame. According to the scheme, the cell and the positive electrode aluminum row and the negative electrode aluminum row are in tight contact, so that small deformation and low cost are realized; and meanwhile, the assembling difficulty and detaching difficulty of the battery pack are lowered, and relatively low vibration resistance and relatively low contact resistance are realized.

A spatial terahertz wave phase modulator based on the high electron mobility transistor is provided. The phase modulator combines the quick-response high electron mobility transistor with a novel metamaterial resonant structure, so as to rapidly modulate terahertz wave phases in a free space. The phase modulator includes a semiconductor substrate, an HEMT epitaxial layer, a periodical metamaterial resonant structure and a muff-coupling circuit. A concentration of 2-dimensional electron gas in the HEMT epitaxial layer is controlled through loading voltage signals, so as to change an electromagnetic resonation mode of the metamaterial resonant structure, thereby achieving phase modulation of terahertz waves. The phase modulator has a phase modulation depth of over 90 degrees within a large bandwidth, and a maximum phase modulation depth is about 140 degrees. Furthermore, the phase modulator is simple in structure, easy to machine, high in modulation speed, convenient to use, and easy to package.

The invention relates to the technical field of photoelectric display devices, and particularly discloses a blanking frame display which comprises a display screen with a frame on the periphery and an optical component covering the display surface of the display screen, wherein the optical component comprises a middle part and an edge part which surrounds the middle part and is adjacent to the middle part; the edge part comprises a lower surface matched with the display surface, an upper surface opposite to the display surface, and an end surface which is connected with the lower surface and the upper surface and is far away from the middle part, and the upper surface comprises a first tooth-shaped microprism array of which the tooth depth is gradually reduced from the edge part to the middle part; and the lower surface is a concave surface with the distance between the lower surface and the upper surface gradually changing in the direction from the edge part to the middle part, or the lower surface comprises a second tooth-shaped microprism array of which the tooth depth is gradually changed from the edge part to the middle part. The blanking frame display is simple in structure, the watching sight completely falls into the display surface area of the display screen through two times of offset of the upper surface and the lower surface, a complete frameless image can be conveniently watched, and visual blanking of the display screen frame is achieved.

The invention relates to device and method for buffering a main oil cylinder of a paste filling pump in a coal mine, and belongs to a device and a method for buffering a paste filling pump. The device comprises a cylinder barrel, a piston, a limiting cover, an oil cylinder bottom, a floating restrictor ring and a piston rod, wherein the oil cylinder bottom is connected to one end of the cylinder barrel; the piston is positioned in the cylinder barrel; the limiting cover is connected with the oil cylinder bottom; the floating restrictor ring is arranged between the limiting cover and the oil cylinder bottom; the stern post of the piston rod is inserted into the floating restrictor ring; and the piston rod is connected with the piston by adopting screw threads. In the method, the stern post of the piston rod is in a stepped structural form, and buffer action is completed with the gradual reduction of a gap positioned between the stern post of the piston rod and the floating restrictor ring and the gradual increase of buffer degree in the process of the stern post of the piston rod gradually inserted into the floating restrictor ring. According to the invention, the problem of large processing difficulty caused by high required match accuracy is solved, and the requirement for regulation of buffer effect under different work conditions is realized; and the device disclosed by the invention has the advantages of simple structure, stable and reliable work and long service life.

The invention discloses a machining die for a shaft tube hollow tube. The machining die comprises an upper pre-upsetting die, a lower pre-upsetting die and an extrusion head. The lower pre-upsetting die can support a blank; when the upper pre-upsetting die and the lower pre-upsetting die are in a closed state and the extrusion head is located in a hollow portion between the upper pre-upsetting die and the lower pre-upsetting die under the effect of equipment, a cavity formed among the extrusion head, the upper pre-upsetting die and the lower pre-upsetting die is identical to the shaft tube hollow tube in structure. By applying the machining die for the shaft tube hollow tube, the forged shaft tube hollow tube blank is provided with a basically formed inner hole structure, so that the drilling time of subsequent machining can be shortened, the subsequent machining allowance is small, and then the machining time is shortened, and the cost is reduced. In addition, by applying the machining die, the problem that the machining difficulty of a traditional inner hole is high is avoided, and the production efficiency is improved remarkably. The invention further discloses a machining process of the shaft tube hollow tube, and according to the machining process, the machining die for the shaft tube hollow tube is adopted.

The invention discloses an eccentric shaft. The eccentric shaft comprises a first shaft piece and a second shaft piece, and a first eccentric wheel and a second eccentric wheel arranged between the first shaft piece and the second shaft piece and connected with each other; the first eccentric wheel is fixedly connected with the first shaft piece; the second eccentric wheel is fixedly connected with the second shaft piece; a shaft groove is formed in the first shaft piece; a gear groove is formed in the second shaft piece; the axes of the first shaft piece and the second shaft piece are a coaxial line; a first axis of the first eccentric wheel and a second axis of the second eccentric wheel are not the same axis; the first axis and the second axis have the same distance from the coaxial line; and the first axis, the second axis and the coaxial line are positioned on the same plane. The eccentric shaft is reasonable in structural design and compact in total layout, is provided with two eccentric shaft bodies, can own more stable and precise eccentric angles, can keep equipment stable, and has such characteristics as low vibration and low pressure fluctuation.

The invention discloses a hot carrier solar cell and a photovoltaic module, relates to the technical field of photovoltaics, and aims to improve sunlight absorption of a light absorption layer. The cell comprises a substrate, and a first electrode, a first hot carrier transmission layer, a light absorption layer, a second hot carrier transmission layer and a second electrode which are formed on the substrate. The light absorbing layer has a three-dimensional structure. The first electrode comprises a conductive layer and at least one conductive bulge formed on the conductive layer, the conductive bulge extends into the first hot carrier transmission layer, and / or the second electrode comprises a conductive layer and at least one conductive bulge formed on the conductive layer, and the conductive bulge extends into the second hot carrier transmission layer; the three-dimensional structure of the light absorption layer has a first height in the direction perpendicular to the substrate, and the conductive protrusions are at least partially located within the range of the first height. The hot carrier solar cell and the photovoltaic module provided by the invention are used for manufacturing the hot carrier photovoltaic module.

The invention discloses a foil type strain gauge and a manufacturing method thereof. A macromolecular engineering plastic film is served as a substrate; a sensitive grid is firmly glued to a film substrate layer through a gluing layer; and a sealing layer is arranged on the surface of the sensitive grid. The manufacturing method comprises the following steps: performing plasma or corona treatment on one surface of the film substrate and then treating the surface by using a coupling reagent; coating epoxy resin or phenolic aldehyde-epoxy resin on the surface of the film substrate or one surface of a sensitive grid blank; gluing and curing the film substrate and the sensitive grid blank; processing the sensitive grid blank into the sensitive grid; and lastly, gluing the sealing layer on the surface of the sensitive grid. According to the manufacturing method provided by the invention, the problems of the substrate of high difficulty in processing, unequal and uneven thickness, and the like, are solved, and the working efficiency is increased; the peel strength between the sensitive grid and the substrate is increased; the sealing layer has an excellent function for protecting the sensitive grid; and various aspects of the strain gauge, such as moisture and thermal resistance, creep deformation, resetting consistency, and the like, are obviously improved.

The invention belongs to the technical field of electromagnetic functional devices, and focuses on dynamic functional devices in the terahertz band. The invention adopts the phase modulation unit structure of vanadium dioxide C-shaped split ring, metal C-shaped split ring, and vanadium dioxide and metal composite split ring, and realizes the discontinuous change of phase according to the size of the structure, the orientation of the opening and the change of the split ring material; Utilize the phase change characteristics of vanadium dioxide to change the resonant mode of the structure, thereby changing the transmission phase of the structure, and realize the control of the dynamic focus of the metalens; the three phase modulation unit structures arranged in an array on the substrate have the ability of multiple phase selection function to realize terahertz beam convergence. Under laser irradiation, the x-line polarized terahertz wave is vertically incident, and the long-distance y-polarized beam is focused; under non-laser irradiation, the x-line polarized terahertz wave is vertically incident, and the long-distance y-polarized beam is focused . Finally, the dynamic switching between the far and near focal points is realized, and the dynamic modulation of the metalens is completed.

A dynamic control terahertz metasurface device based on vanadium dioxide belongs to the technical field of electromagnetic functional devices. The metasurface device includes a substrate, a surface magnetic field enhancement structure formed on the substrate, and a metal layer formed on the lower surface of the substrate; wherein, the magnetic field enhancement structure includes a plurality of unit structures arranged in an array, and the unit structure includes Al Kimedesian spirals and vanadium dioxide strips. In the metasurface device of the present invention, vanadium dioxide is combined with metal to form a surface magnetic field enhancement structure. Under laser irradiation, the surface magnetic field of the metasurface device is enhanced by 124.48 times compared with the incident magnetic field, realizing the enhancement of the surface magnetic field; and Under no laser irradiation, the surface magnetic field of the metasurface device is only 1.57 times stronger than the incident magnetic field, and the difference between the two is 79 times. The dynamic regulation of the surface magnetic field is realized, which can be regarded as a switch.

The invention discloses an extruding machine, and belongs to the technical field of extruding. The technical problem that in the prior art, a movable beam center line cannot be adjusted is solved. Theextruding machine comprises a rear beam, a movable beam and a front beam, four expanding stand columns are arranged between the rear beam and the front beam, the movable beam is arranged on the fourexpanding stand columns in a sliding manner, the rear beam is provided with a main oil cylinder used for driving the movable beam to axially move in a reciprocating manner on the expanding stand columns, sliding plates which are arranged axially are arranged on the expanding stand columns, sliding grooves are formed in the sliding plates, the movable beam is provided with four mounting bosses which are distributed in a diagonal line manner, two adjusting mechanisms which are distributed in a front and back manner are arranged on the mounting bosses, each adjusting mechanism comprises a slidingblock, an adjusting screw and a locking nut, the sliding blocks are arranged in the sliding grooves in a sliding manner, the adjusting screws are screwed to the mounting bosses in a threaded manner and are locked and fixed through the locking nuts, and one ends of the adjusting screws are in rotation fit with the ball faces of the sliding blocks.

The invention discloses a VO2-based switchable terahertz wave beam regulation and control device and a preparation method thereof, and belongs to the technical field of terahertz devices. Comprising a bottom-layer adjustable grating structure, a substrate and a phase modulation array structure arranged on the substrate, the phase modulation array structure is composed of a plurality of phase modulation unit structures arranged in an array mode, and each phase modulation unit structure is an SRR structure with the opening direction being + / -45 degrees relative to the X axis. Unit structures with different phases are arranged in an array form according to a phase calculation formula, VO2 is embedded in the back surfaces of the units, control over abnormal refraction of dual-frequency-band and dual-space terahertz waves is achieved, when VO2 is in a metal state, abnormal refraction is achieved at a low frequency band and on the front surface of a metasurface, and the performance of the metasurface is improved. And when VO2 is in a transmission state, abnormal refraction is realized at a high frequency band and on the back surface of the metasurface, so that abnormal refraction control of dual-frequency dual-space terahertz waves is realized.

The invention provides a battery pack structure and an electric vehicle, relating to the battery structure technical field of an electric vehicle, including: a negative aluminum row, a lower support frame, a battery cell, an upper support frame and a positive aluminum row; wherein, the negative aluminum row and the positive aluminum row The lower support frame is fixedly connected, the lower support frame is fixedly connected with the upper support frame, and the upper support frame is fixedly connected with the positive aluminum row; the battery cell is fixedly installed on the lower support frame and the between the above supports. According to the solution of the present invention, the battery cells are in close contact with the positive aluminum row and the negative aluminum row, the deformation is small, and the cost is low. resistance.

The invention provides a fingerprint identification display device, a preparation method thereof and a fingerprint identification display device. The fingerprint identification display device comprises a photoelectric sensor array layer, a collimator and a display device which are stacked in sequence, wherein the collimator comprises at least two transparent polyimide layers and at least one shading metal layer; The fingerprint identification display device is simple in structure, small in number of film layers, simple in preparation process and capable of reducing the thickness of a product and solving the problem that in the prior art, a collimator is directly prepared above a photoelectric sensor array layer through an organic photoelectric material, and process difficulty is large.

The invention discloses a multi-pixel wavefront scanning modulator based on a high electron mobility transistor (HEMT), belongs to the technical field of electromagnetic functional devices. Accordingto the invention, the HEMT and the artificial electromagnetic medium resonance structure are combined, and a multi-pixel structure system is formed through multi-unit combination. Rapid multi-pixel modulation of the wavefront can be realized. External voltage is used for independently controlling the pixel units of the wave-front modulator, and the concentration of the two-dimensional electron gasin an HEMT epitaxial layer is controlled through the loaded voltage signals, and therefore the electromagnetic resonance mode of the artificial electromagnetic medium resonance structure is changed.Rapid modulation of the wavefront can be realized. The multi-pixel wavefront scanning modulator can be used for a wavefront rapid scanning imaging system, and has a high amplitude modulation depth ata working frequency point. The simulation result can reach 90%. The multi-pixel wavefront scanning modulator is simple in structure, easy to machine, high in modulation speed, convenient to use and easy to pack.

The invention provides a HEMT array electronically controlled terahertz wave modulator with mesh dislocation distribution, belonging to the technical field of electromagnetic functional devices. The modulator provided by the present invention is composed of a semiconductor material substrate, a heterostructure material epitaxial layer, an artificial microstructure, and a socket circuit. By applying an external voltage signal, the concentration of 2-DEG in the epitaxial layer is changed, thereby changing the artificial microstructure The electromagnetic resonance mode of the terahertz wave can be modulated. The modulator provided by the present invention works in the state of electromagnetic wave transmission, and has a modulation depth as high as 92.8% and a modulation rate above 600MHz; it can be realized by micro-fabrication technology, and the preparation process is mature and reliable; it belongs to an external terahertz amplitude modulation device with independent The advanced device packaging and feeding network are very easy to integrate with various terahertz communication, imaging or detection systems, and have good practical application value in terahertz wireless communication, terahertz spectrum technology, terahertz security imaging and other fields.

The invention relates to a cone ring of a synchronizer and a manufacture method thereof. The cone ring of a synchronizer includes the basal body (1) of the cone ring and a friction material layer (3); wherein, the cone ring of a synchronizer also includes a metal plate layer (2); the metal plate layer (2) is jointed on the inner cone surface and / or the outer cone surface of the basal body (1) of the cone ring; the friction material layer (3) is a metal alloy. The cone ring of a synchronizer provided by the invention greatly reduces the manufacture cost; simultaneously the friction material layer can be jointed on the basal body of the cone ring through the metal plate layer by utilizing a simple manufacture technique, thereby manufacturing the cone ring of a synchronizer with low cost andgood synchronous effect. Besides, the cone ring of a synchronizer has the advantages of good wear resistance and long service life.

The invention discloses an adjustable metal wire terahertz wave direct modulator loaded outside a cavity, and belongs to the technical field of electromagnetic functional devices. It includes a rectangular waveguide, a dielectric substrate, a resonant structure, a Schottky diode, a grounding stub and a filter feed structure; the dielectric substrate runs through the wall of the rectangular waveguide cavity and is placed on the long side of the rectangular waveguide; the upper surface of the dielectric substrate is from the inside of the rectangular waveguide to the The outside of the rectangular waveguide is a resonant structure, a Schottky diode and a filter feed structure in sequence. The invention is a two-dimensional planar structure, which can be realized by means of micro-processing, has mature technology, is easy to manufacture, and avoids difficult processing brought about by the design scheme of the complex three-dimensional structure. The invention has large modulation bandwidth, modulation depth and extremely low insertion loss, and can work under normal temperature, normal pressure and non-vacuum conditions, so the modulator of the invention has good practical application prospects.

The invention discloses a terahertz space external phase modulator based on a high electron mobility transistor. The device combines a fast-response high-electron-mobility transistor with a novel artificial electromagnetic medium resonant structure, enabling it to rapidly phase-modulate free-space-propagating terahertz waves. The modulator is composed of a semiconductor material substrate, a HEMT epitaxial layer, a periodic artificial metal electromagnetic resonance structure, and a socket circuit. The concentration of the two-dimensional electron gas in the HEMT epitaxial layer is controlled by a loaded voltage signal, thereby changing the resonance of the artificial electromagnetic medium. The electromagnetic resonant mode of the structure, thereby realizing the phase modulation of the terahertz wave. The phase modulator can realize a phase modulation depth of more than 90 degrees within a large bandwidth, and the maximum phase modulation depth can reach about 140 degrees. Moreover, the device has a simple structure, is easy to process, has a fast modulation speed, is convenient to use, and is easy to package.