Terahertz multiband modulator based on high electron mobility transistor

A high electron mobility, modulator technology, applied in discontinuous tuning of frequency band selection, discontinuous tuning with a separate pre-tuning circuit, etc., can solve the problem that communication devices cannot be directly applied to the terahertz band, and achieve good phase Modulation ability, enhanced regulation ability, effect of high modulation rate

Active Publication Date: 2016-05-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

Since the required size of functional devices in the terahertz band is on the order of microns or even nanometers, communication devices in the microwave band cannot be directly applied to the terahertz band.

Method used

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  • Terahertz multiband modulator based on high electron mobility transistor
  • Terahertz multiband modulator based on high electron mobility transistor
  • Terahertz multiband modulator based on high electron mobility transistor

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Embodiment Construction

[0024] The modulation functional area of ​​the HEMT terahertz wave space external multi-band modulator in the present invention is a triode array structure in which HEMT and Metamaterials are ingeniously and effectively combined. Through the optimized design of the resonance structure and the efficient combination with dual transistors, the modulator has There are four amplitude modulation frequency bands and three phase modulation frequency bands, and the amplitude modulation efficiency in the amplitude modulation frequency band can reach more than 90%, and the phase modulation depth in the phase modulation frequency band can reach more than 90 degrees. The modulator controls the concentration change of the two-dimensional electron gas in the HEMT through an applied voltage, and the high mobility characteristics of the two-dimensional electron gas in the HEMT allow the modulator to quickly switch between different resonance modes, enabling it to obtain a fairly high amplitude m...

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Abstract

The invention discloses a terahertz multiband modulator based on a high electron mobility transistor, belongs to the technical field of an electromagnetic functional device, especially for a rapid dynamic functional device of a terahertz waveband. The HEMT (High Electron Mobility Transistor) and Metamaterials are combined; the Metamaterials are designed optimally and comprise various complex resonant modes; the high speed dynamic feature of the HEMT and the precise control capacity of the Metamaterials to electromagnetic waves are utilized; the distribution change of two-dimensional electron gas in the HEMT is controlled through an impressed voltage; further the resonant mode conversion of the artificial Metamaterials is controlled; the HEMT terahertz modulator has modulation effects of high modulation depth and high modulation efficiency in modulation frequency bands of four amplitudes; and moreover, the phase modulation depth in a phase modulation frequency band reaches more than 90 degrees.

Description

technical field [0001] The invention belongs to the technical field of electromagnetic functional devices, focusing on fast dynamic functional devices in the terahertz band. Background technique [0002] As one of the most important application directions in the field of terahertz, terahertz wireless communication has attracted the attention of countries all over the world. Compared with microwave communication, optical fiber communication and optical wireless communication, terahertz communication system has unique advantages. For example, compared with microwave communication, the application of THz can provide larger bandwidth and higher transmission speed. In addition, the size of the antenna will be significantly reduced, which is suitable for inter-satellite communication; THz can provide multiple data transmission. The range of action is greater than the line-of-sight infrared transmission; compared with optical communication, the loss of optical communication comes ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03J5/24
CPCH03J5/242H03J5/244
Inventor 张雅鑫赵运成梁士雄乔绅杨梓强
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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