44 results about "Traveling wave amplifier" patented technology

A resistive level-shifting biasing network is used with a capacitor in parallel to couple FET-based amplifier stages from DC to several GHz in a multi-stage amplifier. The output of the first amplifier stage is connected to the input of the second amplifier stage without a blocking capacitor or level-shifting diodes, allowing a portion of the drain current for the first amplifier stage to be supplied from the second amplifier stage. In a particular embodiment, a distributed amplifier achieved over 20 dB gain from DC to about 80 GHz using three traveling wave amplifier chips.

A traveling wave device employs an active Gallium Nitride FET. The Gallium Nitride FET has a plurality of gate feeding fingers connecting to an input gate transmission line. The FET has a drain electrode connected to an output drain transmission line with the source electrode connected to a point of reference potential. The input and output transmission lines are terminated with terminating impedances which are not matched to the gate and drain transmission lines. The use of Gallium Nitride enables the terminating impedance to be at much higher levels than in the prior art. The use of Gallium Nitride permits multiple devices to be employed, thus resulting in higher gain amplifiers with higher voltage operation and higher frequency operation. A cascode traveling wave amplifier employing GaN FETs is also described having high gain and bandwidth.

A traveling wave amplifier (TWA) comprising two or more amplification modules, the inputs of adjacent amplification modules being connected together by a first inductance component of a first characteristic impedance, a second inductance component of a second characteristic impedance and a third inductance component of substantially the first characteristic impedance, the first characteristic impedance being greater than the second characteristic impedance. The outputs of adjacent modules may be similarly connected together by first, second and third inductance components. The characteristic impedance of the second inductance components is preferably substantially equal to that of the circuits to which the TWA is connected, e.g. 50Ω. The first and third inductance components have a characteristic of 100Ω. Such a TWA allows balancing of phase velocities between inputs and outputs of the amplification modules, connection of these around via holes, and extends the frequency capability of the TWA.

A voltage controlled oscillator is provided. The voltage controlled oscillator includes a traveling-wave amplifier having two inputs and two outputs, such as would be formed by a first transmission line having a first input and a first output and a second transmission line having a second input and a second output. The first output of the traveling-wave amplifier is connected to the first input. A delay is connected between the second output and the second input, so as to provide a voltage controlled oscillator that requires minimal power to operate.

The utility model has discloses a coupling output structure for traveling wave tube amplifiers, which comprises an input port and an output port; wherein, the radius of the output port is bigger than that of the input port, a first grade gradually variable circle waveguide and an Nth rank gradually variable circle waveguide are cascaded between the input port and the output port. The utility model adopts the double-segment correcting Duelfer-Chebyshev gradually variable circle waveguide cascade connection or a transition circle waveguide cascaded in the central section of the double-segment correcting duelfer-chebyshev gradually variable circle waveguide. The utility model has the advantages of resolving the problems in prior art , such as large size, high reflection coefficient of the input port and weak capacity of parasitic mode restraint; when the coupling output structure is applied to traveling wave tube amplifiers, positive effects can be obtained, , which are of great practical significance for developing the high power microwave sources applied in long ranged radars and electronic warfare technology.

A traveling wave amplifier circuit to receive an RF wave and an electron sheet beam and to effect synchronized interaction therebetween. The circuit includes a wave guide having at least a first wall and a second wall opposite the first wall. The first wall and the second wall are connected to define an axis of propagation and a rectangular wave guide cross-section that is normal to the axis of propagation. The circuit further includes a plurality of first projections located on an interior surface of the first wall of the wave guide, the first projections being pitched in a direction of the axis of propagation. The circuit further includes a plurality of second projections located on an interior surface of the second wall of the wave guide, the second projections being pitched in a direction of the axis of propagation. A number of the second projections are located on the interior surface of the second wall in a staggered configuration in a direction of the axis of propagation relative to a number of corresponding first projections located on the interior surface of the first wall.

The invention provides a coupled cavity for gyro-traveling wave amplifiers, which consists of a plurality of compound cavities in cascade connection, wherein each compound cavity has an outer coaxial cavity and an inner cylindrical cavity; the working mode of the inner cylindrical cavity is a TE0n circular electric mode; a common wall of a plurality of rectangular coupling holes is arranged between the inner cylindrical cavity and the outer coaxial cavity; two ends of the inner cylindrical cavity and the outer coaxial cavity in the axial direction are provided with vertical walls mutually perpendicular to the common wall; the vertical walls are axially provided with circular holes for providing electron beam channels and the coupling conversion or stop of working modes; and the vertical walls on the right side of the cavities with even serial numbers are provided with a plurality of sector coupling holes for the mode coupling of the adjacent outer coaxial cavities. In order to overcome the disadvantages that traveling wave interaction has relative instability and resonance interaction is narrow in frequency band, the coupled cavity transmits electromagnetic wave between every two adjacent resonant cavities so as to form the intercoupling resonance and alternate transmission-advance-coexistence of the electromagnetic in a plurality of resonant cavities, is used for high-frequency interaction circuits, enhances the interaction of electron beams with microwaves and millimeter waves, and expands working band.

The invention provides a double electron beam THz wave radiation source of a cascade high-frequency structure. The double electron beam THz wave radiation source uses a backward wave oscillator to generate THz signals as drive signals of a travelling wave amplifier. In a same THz wave radiation source, high-power THz waves are generated and at the same time the power amplification and band spread of the THz waves are realized, thereby being beneficial for applying the THz wave radiation source in anti-interference, harmful substance detection, ultra wide band radar long-range detection and high resolution imaging radar aspects, etc.

The invention provides a terahertz source amplifying device based on a multiple-cascade high-frequency structure. The terahertz source amplifying device is a cascaded multi-electron-beam terahertz radiation source combining a backward wave amplifier and a traveling wave amplifier. A THz excitation signal is input to the backward wave amplifier and is amplified through backward wave electron beam-wave interaction, a backward wave signal is output to a traveling wave high-frequency structure through dual ports, multistage amplification and band broadening are realized through multiple beam-wave interaction at a traveling wave section, and power synthesis is carried out on signals output by the multiple-cascade structure. The terahertz source amplifying device based on multiple-cascade high-frequency structure has the characteristics of high power, high gain and wide band, has absolute advantages in implementing a THz integrated vacuum electronic device and has important application prospects in aspects such as THz radar, communication, danger detection and imaging.

A traveling wave amplifier (TWA) primarily for driving a semiconductor optical device is disclosed. The TWA of an embodiment provides a plurality of differential amplifiers of the first type and an additional differential amplifier of the second type, where are they are connected between the input and the output of the TWA. The differential amplifiers of the first type provide a first delay from the input to the output, while, the differential amplifier of the second type provide a second delay longer than the first delay between the input and the output of the TWA.

The invention relates to a high-gain double-stroke traveling-wave amplifier for picosecond laser pulse amplification. A semiconductor diode pumping source is joined with a first lens; the first lens is joined with a second lens; the second lens is joined with a first plane mirror; the first plane mirror is joined with a laser crystal; the laser crystal is joined with a third lens; the third lens is joined with a second plane mirror; a picosecond seed source is joined with a thin film polaroid; the thin film polaroid is joined with a Faraday optical rotator; the Faraday optical rotator is joined with a sixth lens; the sixth lens is joined with a fifth lens; the fifth lens is joined with a fourth lens; and the fourth lens is joined with the first plane mirror. According to the invention, the seed laser is subjected to beam expansion and focusing by utilizing the lens combination, the overlapping of seed optical pumping lights in a crystal is realized; at the same time, the surplus pumping lights are reflected to the inner part of the crystal for reuse by utilizing the combination of the lenses and reflection mirrors; and the high-gain double-stroke traveling-wave amplifier has the advantages of high amplification gain, outstanding output facula quality, good stability and the like.

A traveling wave device employs an active Gallium Nitride FET. The Gallium Nitride FET has a plurality of gate feeding fingers connecting to an input gate transmission line. The FET has a drain electrode connected to an output drain transmission line with the source electrode connected to a point of reference potential. The input and output transmission lines are terminated with terminating impedances which are not matched to the gate and drain transmission lines. The use of Gallium Nitride enables the terminating impedance to be at much higher levels than in the prior art. The use of Gallium Nitride permits multiple devices to be employed, thus resulting in higher gain amplifiers with higher voltage operation and higher frequency operation. A cascode traveling wave amplifier employing GaN FETs is also described having high gain and bandwidth.

A RF amplifier includes a RF input section for receiving a RF input signal. At least one single-sided slow-wave structure is associated with the RF interaction section. An electron ribbon beam that interacts with the RF input supported by the at least one single-sided slow-wave structure so that the kinetic energy of the electron beam is transferred to the RF fields of the RF input signal, thus amplifying the RF input signal. A RF output section outputs the amplified RF input signal.

A traveling wave amplifier (TWA) primarily for driving a semiconductor optical device is disclosed. The TWA of an embodiment provides a plurality of differential amplifiers of the first type and an additional differential amplifier of the second type, where are they are connected between the input and the output of the TWA. The differential amplifiers of the first type provide a first delay from the input to the output, while, the differential amplifier of the second type provide a second delay longer than the first delay between the input and the output of the TWA.

An improved traveling wave amplifier is disclosed. The improvements to the traveling wave amplifier disclosed include designing the drain-to-drain and gate-to-gate transmission lines as coupled pairs thereby coupling energy back to the input from the output. The result is increased bandwidth without an increase in device count or resorting to a cascade configuration.

An improved traveling wave amplifier is disclosed. The improvements to the traveling wave amplifier disclosed include designing the drain-to-drain and gate-to-gate transmission lines as coupled pairs thereby coupling energy back to the input from the output. The result. is increased bandwidth without an increase in device count or resorting to a cascade configuration.

A traveling wave amplifier (TWA) with suppressed jitter is disclosed. The TWA includes a plurality of unit amplifiers with the differential arrangement comprised of a pair of transistors and a cascade transistors connected in series to the switching transistors. The unit amplifiers further includes current sources to provide idle currents to the cascade transistors. Even when the switching transistors fully turn off, the idle currents are provided to the cascade transistors, which set the operating point of the cascade transistor in a region where an increase of the base-emitter resistance is suppressed.

The invention discloses a Josephson traveling wave amplifier and a preparation method thereof. The Josephson traveling wave amplifier comprises two metal layers and an intermediate dielectric layer; the first metal layer is an aluminum film, and a lower panel, an inductor and a ground plane of the capacitor are prepared through ultraviolet lithography; a second metal layer is used for preparing anupper panel of the Josephson junction and the capacitor through double-angle evaporation; the intermediate dielectric layer completely covers the first metal layer by using an aluminum oxide film grown by monoatomic layer deposition; wherein the Josephson structures form a transmission line, and two ends of the transmission line respectively form an input port and an output port of the Josephsontraveling wave amplifier; the Josephson junctions are connected with the ground through plate capacitors, and coplanar waveguide lines are adopted for connection at the bent positions of the transmission lines. By adopting the Josephson traveling wave amplifier provided by the invention, the material loss can be reduced, the preparation process is simplified, and the yield of device preparation isimproved.

The disclosed traveling wave amplifier divides circuit of multistage traveling wave amplifier into multiple segments. Each segment includes 2 - 5 stage traveling wave amplification, and phase inversion amplification circuit (PIAC) connected between adjacent two segments. PIAC is bipolar transistor circuit or field effect transistor circuit in 1 - 2 stages. Capacitance is connected between each segment and PIAC. The invention increases gain of traveling wave amplifier obviously, widens frequency band, and raises stability of circuit.

The invention discloses a double-synchronous pumping Raman laser amplification device and method. The double-synchronous pumping Raman laser amplification device comprises a picosecond multi-pulse laser, a Raman synchronous pumping cavity A, a traveling wave amplifier and a Raman synchronous pumping cavity B. After picosecond pulses output by the picosecond multi-pulse laser are split by a first beam splitter, reflected light enters the traveling wave amplifier to be amplified, and amplified fundamental frequency light is obtained; the transmission light enters the Raman synchronous pumping cavity A to be subjected to stimulated Raman scattering, and Stokes seed light is obtained; and amplified fundamental frequency light and Stokes seed light enter the Raman synchronous pumping cavity B for Raman synchronous amplification after being combined by a second beam splitter, and high-order Stokes light after Raman synchronous amplification is output. The picosecond multi-pulse technology, the Raman synchronous pumping technology and the Raman amplification technology are combined, the picosecond Raman gain can be effectively improved, and high-energy picosecond high-order Stokes light output is obtained.

The invention relates to a laser device based on cascaded stimulated scattering. An existing gas Raman laser device is only subjected to one-time SBS and one-time SRS effects, so that the output lightcompression efficiency is low. The invention provides the laser device based on the cascaded stimulated scattering. A first stimulated scattering part comprises a pulse laser device and an SBS compact two-cell assembly; the SBS compact two-cell assembly comprises a first polarization analyzer; a second stimulated scattering part is arranged below the first polarization analyzer; the second stimulated scattering part comprises a first travelling wave amplifier and an SBS focusing single-cell assembly; the SBS focusing single-cell assembly comprises a second polarization analyzer; a third stimulated scattering part is arranged below the second polarization analyzer; the third stimulated scattering part comprises a second travelling wave amplifier and an SRS focusing single-cell assembly; the SRS focusing single-cell assembly comprises a third polarization analyzer; and a light output part is arranged below the third polarization analyzer. The cascaded SBS effect and the travelling waveamplifiers improve the peak power of seed light and improve the SRS effect.

The invention discloses a two-dimensional traveling wave high-gain broadband CMOS power amplifier, which comprises an input power division network, a first input third-order artificial transmission line, a second input third-order artificial transmission line, a drain bias network, a first high-gain two-pile PMOS amplification network, a second high-gain two-pile PMOS amplification network, a third high-gain two-pile PMOS amplification network, a first high-gain two-pile NMOS amplification network, a second high-gain two-pile NMOS amplification network, a third high-gain two-pile NMOS amplification network and an output two-dimensional three-order artificial transmission line network. The core architecture adopts the characteristics of high power and high gain of the high-gain two-pile PMOS and NMOS amplification networks in the microwave band, and meanwhile, the ultra-wideband frequency response characteristic and the simplified series voltage division structure of the two-dimensionaltraveling wave amplifier structure are utilized, so that the whole power amplifier obtains good wideband, high gain, high efficiency and high power output capability, and a power supply network is simple.

The invention provides a terahertz source amplifying device based on a multiple-cascade high-frequency structure. The terahertz source amplifying device is a cascaded multi-electron-beam terahertz radiation source combining a backward wave amplifier and a traveling wave amplifier. A THz excitation signal is input to the backward wave amplifier and is amplified through backward wave electron beam-wave interaction, a backward wave signal is output to a traveling wave high-frequency structure through dual ports, multistage amplification and band broadening are realized through multiple beam-wave interaction at a traveling wave section, and power synthesis is carried out on signals output by the multiple-cascade structure. The terahertz source amplifying device based on multiple-cascade high-frequency structure has the characteristics of high power, high gain and wide band, has absolute advantages in implementing a THz integrated vacuum electronic device and has important application prospects in aspects such as THz radar, communication, danger detection and imaging.

The invention relates to the field of laser amplification equipment. Specifically, the present invention relates to a cascadable laser traveling wave amplifier capable of being cascaded. The laser traveling wave amplifier comprises a seed light input end, a pump light input end, an amplified laser output end and an amplified light path. The seed light input end and the amplified laser output end are coaxially arranged. The seed light input from the seed light input end and pump light input from the pump light input end are amplified by the amplified light path and then output by the amplifiedlaser output end. According to the invention, the laser traveling wave amplifier forms a standardized module. Therefore, a plurality of laser traveling wave amplifiers can be cascaded. A user can amplify the laser at different multiplying powers by increasing or decreasing the number of the laser traveling wave amplifiers. The problem that an existing laser amplifier cannot quickly adjust laser amplification parameters is solved. The laser amplifier is easy to operate, high in adjustment speed and capable of freely selecting the amplification times.

The invention provides a gain medium multiplexed slice hybrid amplification laser. The laser comprises a seed laser for injecting amplifier seed light. The laser beam sequentially passes through a first lens, a second lens, a first polarizing film, a Faraday rotator and a half-wave plate and then entersa regenerative amplifier. The laser beam is subjected to oscillating and amplifying in the regenerative amplifier and then enters a traveling wave amplifier through the half-wave plate, the Faraday rotator and the first polarizing film. The traveling wave amplifier and the regenerative amplifiershare a slice gain module. The invention further provides a laser output method. The device and the method are compact in structure and high in comprehensive light efficiency.

The invention belongs to the technical field of ultrafast laser, and discloses a high-brightness main oscillation power amplification picosecond laser system. Comprising an all-polarization-maintaining optical fiber picosecond seed laser, an optical fiber collimator, a spatial isolator, a 45-degree total reflective mirror, a polarization splitting prism, a first-stage solid traveling wave amplifier, a second-stage solid traveling wave amplifier and a third-stage solid traveling wave amplifier which are sequentially arranged in the laser transmission direction, the secondary solid traveling wave amplifier is positioned on one side of reflected light of the polarization splitting prism; and the optical fiber collimator is connected with the full polarization maintaining optical fiber picosecond seed laser through a tail fiber. The picosecond laser system is simple in structure, stable in performance and easy to maintain, high-brightness 1064 nm laser output can be achieved, green light output exceeding 50 W can be achieved on the basis of hectowatt fundamental frequency light by arranging the frequency doubling module easy to integrate and disassemble, and the wide industrial application market requirement can be met.

The present invention relates to the traveling-wave amplifier having a pi-type output transmission line structure. In traveling-wave amplifiers having conventional output line structures including T-line and m-derived-line structures, additional capacitance and inductance are attached to the output of the transistors for velocity matching in input / output transmission lines in order to improve gain-bandwidth product. However, it is difficult to achieve velocity matching of output / input transmission lines without stability problem due to the influence of the additional capacitance and inductance through the feedback capacitance of the transistor used. The present invention provides the traveling-wave amplifier having a pi-type output transmission line structure, where the additional capacitance used for velocity matching of input / output transmission lines is connected in the middle of the output line. Since the additional element is isolated from the output of the transistor by the output transmission line, the pi-type output transmission line structure can achieve velocity matching of output / input transmission lines without stability problem associated with the additional capacitance and the feedback capacitance of the transistor. The traveling-wave amplifier having a pi-type output transmission line structure has an improved bandwidth, gain flatness, and stability compared to traveling-wave amplifiers having the conventional output line structures.

A traveling wave amplifier (TWA) with suppressed jitter is disclosed. The TWA includes a plurality of unit amplifiers with the differential arrangement comprised of a pair of transistors and a cascade transistors connected in series to the switching transistors. The unit amplifiers further includes current sources to provide idle currents to the cascade transistors. Even when the switching transistors fully turn off, the idle currents are provided to the cascade transistors, which set the operating point of the cascade transistor in a region where an increase of the base-emitter resistance is suppressed.

The invention provides a double electron beam THz wave radiation source of a cascade high-frequency structure. The double electron beam THz wave radiation source uses a backward wave oscillator to generate THz signals as drive signals of a travelling wave amplifier. In a same THz wave radiation source, high-power THz waves are generated and at the same time the power amplification and band spread of the THz waves are realized, thereby being beneficial for applying the THz wave radiation source in anti-interference, harmful substance detection, ultra wide band radar long-range detection and high resolution imaging radar aspects, etc.