Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Terahertz source amplification device based on multiple cascaded high-frequency structures

A high-frequency structure and amplifying device technology, which is applied in the field of vacuum electronic devices, can solve the problems of single-stage traveling wave tube output power level to be improved, unfavorable anti-interference and imaging system applications, and inability to output broadband signals. The difficulty of development, the realization of high power output, and the effect of reducing the weight of the magnetic field

Active Publication Date: 2016-01-20
INST OF ELECTRONICS CHINESE ACAD OF SCI
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] (1) For a single-stage traveling wave tube amplifier, power amplification and frequency band broadening can be achieved, but the output signal bandwidth of the current THz band traveling wave tube amplifier is narrow, which limits its radar target detection in electronic countermeasures. On the other hand , the output power level of the single-stage traveling wave tube needs to be improved, which has greatly restricted its application in ultra-wideband radar long-distance detection, high-resolution imaging radar, etc.
[0008] At present, a THz extended interaction oscillator has been developed. Although it can achieve higher repetition frequency and higher output power, it cannot output broadband signals, which is not conducive to the application of anti-jamming and imaging systems.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Terahertz source amplification device based on multiple cascaded high-frequency structures
  • Terahertz source amplification device based on multiple cascaded high-frequency structures
  • Terahertz source amplification device based on multiple cascaded high-frequency structures

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings. It should be noted that, in the drawings or descriptions of the specification, similar or identical parts all use the same figure numbers. Implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. In addition, the directional terms mentioned in the following embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the directions of the drawings. Accordingly, the directional terms are used to illustrate and not to limit the invention.

[0041] The invention discloses an extended interaction terahertz radiation source amplification chain using a cascaded multi-electron beam combined with a return-wave amplifier and a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a terahertz source amplifying device based on a multiple-cascade high-frequency structure. The terahertz source amplifying device is a cascaded multi-electron-beam terahertz radiation source combining a backward wave amplifier and a traveling wave amplifier. A THz excitation signal is input to the backward wave amplifier and is amplified through backward wave electron beam-wave interaction, a backward wave signal is output to a traveling wave high-frequency structure through dual ports, multistage amplification and band broadening are realized through multiple beam-wave interaction at a traveling wave section, and power synthesis is carried out on signals output by the multiple-cascade structure. The terahertz source amplifying device based on multiple-cascade high-frequency structure has the characteristics of high power, high gain and wide band, has absolute advantages in implementing a THz integrated vacuum electronic device and has important application prospects in aspects such as THz radar, communication, danger detection and imaging.

Description

technical field [0001] The invention relates to the technical field of vacuum electronic devices, in particular to a terahertz source amplification device based on a multi-cascaded structure as an excitation source with a return wave amplifier. Background technique [0002] Terahertz (Terahertz, 1THz=10 12 Hz) waves refer to electromagnetic waves with frequencies in the 0.1-10 THz band, located between infrared and microwave, and in the transition zone from macroelectronics to microphotonics. THz waves have the characteristics of transient, broadband, coherence, and low energy. Imaging), non-destructive testing, safety inspection (biochemical inspection) and other fields have brought far-reaching impact. As a frequency band resource that has yet to be further developed, the THz frequency band has a huge military demand space in the military, especially in radar and target recognition, broadband communication, military reconnaissance, dangerous object detection and non-dest...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J25/42H01J23/06
Inventor 刘文鑫张兆传王勇赵超刘濮鲲
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products