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69 results about "Source–measurement unit" patented technology

The Source–measurement unit is a type of test equipment which, as the name indicates, is capable of both sourcing and measuring at the same time.

An anti-SEE system and method based on synchronizing redundant threads and coding technique

Through the research and improvement of error-correcting codes and error-detecting codes, the anti-SEE system and method based on synchronizing redundant threads and coding technique enables this coding technique to quickly detect the SEU (single event upset) occurring in register file and meanwhile design the both-threaded mechanism of the processor into a redundant both-threaded mechanism. When the register file of a thread is found with SEU, the register data with upset error will be corrected through replacing this register file with the register file of the other redundant thread; through the comparison mechanism of synchronous execution results in the layer of redundant both-threaded instructions, the pipelined circuit is judged whether there is SET (single-event transient) error. If such error occurs, it will be quickly eliminated from the pipeline through the designed redundant thread pipeline restart mechanism. This method satisfactorily solves the two frequent and difficult problems: SMU of register file in processor and pipeline SET.
Owner:BEIJING MXTRONICS CORP +1

Building-out circuit and testing method for testing negative bias temperature instability

The invention provides a building-out circuit and a testing method for testing the negative bias temperature instability (NBTI). The building-out circuit is respectively connected with a source-measurement unit and a PMOS (P-channel Metal Oxide Semiconductor) to be measured; the building-out circuit comprises an NMOS (N-channel metal oxide semiconductor); a base electrode of the NMOS is electrically connected with a source electrode of the NMOS by a resistor R0; a drain electrode fo the NMOS is electrically connected with a grid electrode of the PMOS to be measured by a resistor R1; a grid electrode fo the NMOS is electrically connected with the grid electrode of the PMOS to be measured by a resistor R2; the potential of the base electrode of the NMOS is set into a value of less than 0V; and the voltage input end of the source-measurement unit is connected with the grid electrode of the NMOS. When an input voltage of the source-measurement unit is changed into 0V, due to the voltage division of the resistor R2, the voltage of the grid electrode of the PMOS to be measured is less than 0V, i.e. when the NBTI recovery effect occurs after the stress voltage is switched off, a partial pressure of the R2 is still applied to the grid electrode of the PMOS to be measured to inhibit the NBTI recovery effect in the PMOS, so that the measurement result is more accurate.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Energy storage system, battery management method and system of energy storage system

InactiveCN110588434AImprove the satisfaction of real-time interaction requirementsCells structural combinationElectric vehicle charging technologySource–measurement unitEthernet communication
The invention provides an energy storage system, a battery management method and system of the energy storage system. The core parameters collected by each BMU of the energy storage system are uploaded to the corresponding CMU, and then the corresponding CMU judges whether the corresponding battery cluster is in a failure according to the received core parameters and the collected battery clusterparameters; and if the corresponding battery cluster runs normally, the corresponding CMU uploads the corresponding battery cluster characteristic data to SMU via CAN communication, and if the batterycluster fails, the corresponding CMU uploads the corresponding record edict data to the SMU via Ethernet communication. Compared with the prior art, the real-time interaction requirement satisfactiondegree of large-capacity data in the energy storage system is improved.
Owner:SUNGROW POWER SUPPLY CO LTD

Digitally Compensating for the Impact of Input Bias Current on Current Measurements

A source-measure unit (SMU) may be implemented with digital control loops and circuitry to digitally compensate for the impact of input bias current on current measurements. One or more buffers having well-defined characteristics with respect to certain parameters which may affect the current measurements may be used in the output signal path of the SMU where a shunt voltage developed across a current sense element is measured. For example, the buffers may conduct / develop respective input bias currents that change perceptibly and predictably with temperature. By measuring the temperature and adjusting a control voltage—which is used to develop the shunt voltage—according to the temperature measurements, the impact of the input bias current[s] on the current measurement[s] may be reduced to negligible levels and / or may be eliminated. The control voltage may be adjusted by adjusting a voltage feedback value representative of the measured shunt voltage, and / or by adjusting a current setpoint used for generating the control voltage.
Owner:NATIONAL INSTRUMENTS

Test system and test method for electrical properties of memristor component unit

ActiveCN103063950AComprehensive Characterization TestSpecification characteristic testElectrical testingVoltage pulseAlternating current
The invention discloses a test system for electrical properties of a memristor component unit. The test system for the electrical properties of the memristor component unit comprises a probe station, a pulse generator, a pulse generation module, a source-measurement unit, an oscilloscope and a central control unit. A probe of the probe station is used for electrically contacting electrodes of a test sample so as to carry out relevant tests; the pulse generator is used for generating voltage pulse signals, and measuring corresponding resistance value states of the test sample through the source-measurement unit; the pulse generation module is used for generating alternating current signals, and processing response conditions of the test sample through the oscilloscope; and the source-measurement unit is also used for executing test instructions of direct current I-V characteristic tests and retention tests except being used for measuring alternating current characteristics. The invention further discloses a corresponding test method for the electrical properties of the memristor component unit. By means of the test system and the test method for the electrical properties of the memristor component unit, comprehensive electrical properties of a memristor can be acquired through the method which is efficient and convenient to operate, measurement accuracy and automation degree can be improved, and meanwhile, strong test expansion capability can be achieved.
Owner:HUAZHONG UNIV OF SCI & TECH

Fully new LED (Light Emitting Diode) crystal grain detection technology

The invention discloses a detection method, and aims to provide a crystal grain detection technology which is low in production cost and can greatly shorten the measurement time of a chip. According to a fully new LED (Light Emitting Diode) crystal grain detection technology, a performance test probe is additionally arranged on a table; firstly the electrostatic discharge capacity of the chip is measured by using an ESD (Electronic Static Discharge) unit probe; the chip after the antistatic property measurement moves; in a movement process of the chip, the movement of the chip is controlled through a servo driver; the chip is placed just below an SMU (Source Measure Unit) unit probe to guarantee that the detection position of the SMU unit probe is the same as the detection position of the ESD unit probe and measure and record the electric property of the chip; when the electric property of the chip is measured by the SMU unit probe, all data of the same chip is comprehensively recorded at the same time, so the measurement time of the chip is shortened, the production cost can be greatly reduced, the positions in two measurement processes are positioned at the same position of the chip, and extra damage is not caused to the appearance of the chip.
Owner:山西高科华兴电子科技有限公司
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