179 results about "Microstrip filter" patented technology

The invention discloses a source end coupling microstrip filter which comprises a T-shaped resonator, an input coupling feed line, an output coupling feed line and an interfinger coupling line, wherein the T-shaped resonator is provided with two open-circuit branch sections and a short-circuit branch section, the two open-circuit branch sections form both sides of a U-shaped microstrip line, the short-circuit branch section is arranged at the bottom end of the U-shaped microstrip line, the short-circuit end of the short-circuit branch section is provided with a grounding through hole, and thesum of the lengths of the two open-circuit branch sections and the short-circuit branch section is a one half wavelength; the input coupling feed line and the output coupling feed line are coupled with the open-circuit branch sections at the inner sides of the open-circuit branch sections of the T-shaped resonator; and the interfinger coupling line is positioned in the T-shaped resonator and is arranged between the input coupling feed line and the output coupling feed line. The invention is provided with a plurality of controllable transmission zero points and has the advantages of flexible design, small volume, small insertion loss and the like.

This invention relates to a super broad band plane micro-strip filter including: a front part, a rear part and an input/output port, in which, the front part includes: interdigital capacitor units, a uniform transmission line and a medium plate, the two interdigital units are set at both ends of the medium plate, the unform transmission line is set at the middle of the medium plate, the input/output port has two ports connected with the capacitors, the rear part includes: a non-uniform DGS unit, a slot structure unit and an earth unit, the non-uniform DGS unit includes 7 arrayed non-uniformly in an approximate equidifferent sequence, the slot structure has three sets loaded at both sides of the even DGS unit, which applies front and rear circuit structure to realize high pass and low pass filters and reduce areas of circuits.

The invention discloses a radio frequency front-end frequency selection circuit and a signal receiving method thereof. The circuit comprises: an antenna used for coupling and receiving a radio frequency signal; a first multipath switch used for selecting the radio frequency signal to a microstrip filter of a corresponding frequency band; the microstrip filter used for filtering an out-of-band interference signal; a low noise amplifier used for amplifying the useful radio frequency signal; and a filter group used for filtering the amplified signal; a second multipath switch used for switching the radio frequency signal obtained by the filter group to a subsequent link of a receiver to be processed. The method comprises the steps that: the radio frequency signal is coupled to a radio frequency link by the antenna, the first multipath switch switches the radio frequency signal to the microstrip filter of the corresponding frequency band, the microstrip filter filters the out-of-band interference signal and amplifies and filters the useful signal for the second time, and finally the signal is switched to the subsequent link of the receiver to be processed. The radio frequency front-end frequency selection circuit disclosed by the invention has the advantages of miniaturization, integration and strong expansibility.

The invention relates to a microwave device ceramic substrate material and a preparation method thereof, and belongs to the technical field of electronic materials. The microwave device ceramic substrate material comprises a main crystal phase and a modified additive, wherein the chemical general formula of the main crystal phase is Mg(1+x)CoyTiO(3+x+y), x is more than 0.01 and less than 0.05, y is more than 0.001 and less than 0.01, the modified additive is one or a plurality of materials selected from CeO2, Nb2O5, Nd2O3, ZnO, MnCO3 and SiO2, and the mass of the modified additive is 0.0-4.0%of the total mass of the whole microwave device ceramic substrate material. The preparation method comprises processes of material preparing, ball milling, pelletizing, forming and sintering. The microwave device ceramic substrate material has characteristics of high Q*f value (80000-100000), medium dielectric constant (17-20) and serialization dielectric constant temperature coefficient (0-110),is applicable for preparations of the microwave device substrate materials, and can meet the preparation requirements of the microwave devices (especially the microstrip filter). The method of the present invention has characteristics of simpleness, easy control, environmental protection and low cost.

The invention provides a branch knot loading compact type microstrip filter. Metal circuits with left-right symmetrical patterns are arranged on a metal surface layer. The metal circuits comprise bent input-output ports which are left-right symmetrical and arranged in a Z shape, source end and load loading transmission lines and input-output couplers which are inwardsafter bending. The source end and the loading transmission lines are connected in a bending mode. The branch knot loading compact type microstrip filter further comprises a T-shaped opening circuit loading upper transmission line, a T-shaped opening circuit loading lower transmission line and left-right-parallel even transmission line resonance units of a downward bent structure. The T-shaped opening circuit loading upper transmission line and the T-shaped opening circuit loading lower transmission line are located at a middle position and of a cross-shaped crossing structure and arranged vertically. The branch knot loading compact type microstrip filter solves the problem that a traditional microstrip filter is large in size, low in stop band restrain level and high in loss.

The invention relates to a coupling method of a microstrip filter and a microstrip resonator thereof. The resonator comprises a group of finger-inserting capacitors comprising microstrips, a group of double-helix curved inductors and a group of blocky capacitors formed with ground, wherein the microstrip comprises an upper-layer superconducting film, a lower-layer superconducting film and an artificial monocrystal medium positioned between the upper-layer and the lower-layer superconducting films; the finger-inserting capacitors are connected in parallel with the double-helix curved inductors, and the finger-inserting capacitors and the double-helix curved inductors connected in parallel are serially connected with the blocky capacitors; a line in the finger-inserting capacitors of the first resonator, which has the same charge polarity with an outermost line of the finger-inserting capacitor of the second resonator is shortened or cut off completely; and the outermost line of the finger-inserting capacitors of the second resonator is elongated and bent, extends into a line shortened or cut off completely in the finger-inserting capacitors of the first resonator and is coupled with two adjacent lines in the finger-inserting capacitors of the first resonator. The filter has less insertion loss, large out-band rejection, high band-edge gradient and good group delay performance.

The invention relates to a differential microstrip filter antenna fed by a balun filter. The structure uses a balun filter to generate the differential signal with filtering characteristics, which excites the differential fed microstrip antenna, and realizes the miniaturized differential fed microstrip antenna with filtering and radiation characteristics at the same time. The filter antenna has stable gain in the pass band, fast gain drop out of the pass band and good edge selectivity. In addition, the radiation pattern of the structure is symmetrical and the cross polarization can achieve -35dB. on both the E plane and the H plane.

The present invention is one kind of symmetric double-spiral resonator and the band-pass filter therewith. The present invention features that the resonator consists of two linearly symmetric microstrip lines in spiral structure and connected into one integral, and the band-pass filter consists of input microstrip, output microstrip and resonator array comprising several double-spiral resonators. The filter of the present invention has the advantages of excellent frequency selectivity, high stop band suppression; and the resonator in symmetric double-spiral structure has reduced size, reduced coupling effect of non-adjacent resonators, and simplified circuit design and regulation. The present invention makes it possible to make traditional planar microstrip filter with common metal material and is suitable for making high temperature superconductive filter with high quality factor.

This invention refers to analog signal process and communication technology, especially refers to the group delay equalization of high temperature superconductive filter used in high temperature superconductive film technology field, which contains high temperature superconductive microstrip filter, 3db mixing coupler and two single end reflection filter, is a plane microstrip structure and adapts for making phase equalization and reducing phase distortion to the high temperature superconductive filter of RF front end in satellite receiving system and receiving front end in base station of mobile communication system. Said invention is integrated in one medium substrate and has more stable performance.

The invention discloses a harmonic inhibition power amplifier and belongs to the field of wireless emission. Input signals in the harmonic inhibition power amplifier, after passing through a first microstrip low-pass filter, enter a first-grade power amplifier, then, after passing a second microstrip low-pass filter, enter a second-grade power amplifier, and after being subjected to cluster filtering through a third microstrip low-pass filter, are output. Filter casuists and capacitors are added to a drain electrode feed end of the first-grade power amplifier, a control electrode feed end of the first-grade power amplifier, a drain electrode feed end of the second-grade power amplifier and a grid electrode feed end of the second-grade power amplifier. According to the invention, through microstrip low-pass filters connected in series between the power amplifiers of corresponding grades of the power amplifier provided by the invention, the share of harmonic components transmitted to a circuit of a next grade is reduced, and at the same time, the feed ends of two-stage power amplifiers, besides employing routine filter capacitor combinations, are also additionally provided with sector microstrip filtering branches of fundamental frequency, secondary harmonics and triple harmonics of dot frequency signals so as to reduce power of leakage of the fundamental frequency and the harmonics to a receiver end from a feed circuit.

The invention relates to a miniaturized double-stopband microstrip filter, belonging to the technical field of microwave communication. The miniaturized double-stopband microstrip filter comprises a front surface part, a back surface part and an input/output port, wherein the front surface part consists of a microstrip conduction band and a T-shaped defect microstrip structure, and the back surface part consists of a ground plate unit and a U-shaped defect ground structure. The miniaturized double-stopband microstrip filter can be applied to suppression of double-frequency interference in a wireless communication system, and has the advantages of fully utilizing spaces of the microstrip conduction band and a ground unit, effectively reducing the areas of devices, thereby being beneficial to integration with other planar microwave circuits; simultaneously, the miniaturized double-stopband microstrip filter further has the characteristics of simple structure, free adjustability of double-stopband center frequency, easiness for implementation and the like.

The invention relates to an ultra-wideband microstrip filter which comprises a first metal layer. The metal pattern of the first metal layer comprises symmetrical left and right metal patterns, wherein the left and right metal patterns respectively comprise an input/output port, a first order stepped impedance circuit cut line, a second order stepped impedance circuit cut line and an interdigital coupling line section, and the input/output port, the first order stepped impedance circuit cut line, the second order stepped impedance circuit cut line and the interdigital coupling line section are connected in sequence. The first order stepped impedance circuit cut line, the second order stepped impedance circuit cut line and the interdigital coupling line section form a circular structure as a resonance unit of the filter. The interdigital coupling line section comprises a first sub-line section and a second sub-line section, wherein the first sub-line section and the second sub-line section are parallel to each other and are coupled with each other, the first sub-line section is connected with the tail end of the second order stepped impedance circuit cut line, and the second sub-line section is connected with the initial end of the first order stepped impedance circuit cut line. The intersection of the first and second order stepped impedance circuit cut lines is provided with a metalized through hole which penetrates through the first metal layer and a dielectric layer and forms a path together with a second metal layer.

The invention relates to a TD-LTE (time division-long term evolution) radio-frequency signal reception front-end filtering device. The TD-LTE radio-frequency signal reception front-end filtering device comprises a fan-shaped microstrip filter and a strip line interdigital band-pass filter, which are connected in series through a plated hole and adopt ceramic medium materials as substrate materials, wherein the fan-shaped microstrip filter and a PCB (printed circuit board) are adopted as mounting plates, so that lower cost is guaranteed while performance indexes of a radio-frequency signal reception front-end filter are met; and the fan-shaped microstrip filter and the strip line interdigital band-pass filter are independently mounted on the PCB, are small in volume and can be flexibly assembled in different radio-frequency processing modules. In addition, the two filters are made of high-performance ceramic medium materials, so that the process uniformity of the filter and the reliability of the performance indexes of the filter are guaranteed.

The microstrip filter is composed of input and output microstrips, first and last resonators of receiving direct excitation as well as multiple groups of hair clip type resonators with effective length in half wave length. In each group, number and direction of resonator are same, and directions are different between groups. Input and output microstrips in filter are connected to first and last resonators in filter directly. Couple between resonators is weak in same group since their directions are identical, and Couple between resonators in different groups is stronger. Thus, number of resonators is same group can be adjusted smartly in order to suite filter in different filters designed I different bandwidths. The invention is applicable to traditional plane type metal microstrip filer, also filter in high-temperature superconductor having high quality.

The invention provides a Ca-Ti-based high-dielectric microwave ceramic substrate material, and a preparation method and an application thereof. The material is composed of two crystal phases, namely rutile type TiO2 and CaTiO3. A B-position substituted CaTiO3 phase is compounded with TiO2 to form a ceramic material with adjustable and controllable performances, other doping agents play roles in inhibiting Ti reduction and increasing the Q * f value of the ceramic material, and the general chemical formula of the material is Ca(BbTi1-b)O3 + aTiO2 + cZnO + dD. The preparation method comprises the following steps: burdening, ball-milling, granulating, forming and sintering. Results of laboratory research and test show that the Ca-Ti-based microwave ceramic substrate material prepared by the method has a high Q * f value (8000-12000), a high dielectric constant (145-165) and a serialized dielectric constant temperature coefficient (-1500 +/- 500). The composite ceramic is suitable for manufacturing substrate materials of microwave capacitors, and can also be used for manufacturing materials of adjustable microwave devices such as a microstrip filters.