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37 results about "Group 6 element" patented technology

Group 6, numbered by IUPAC style, is a group of elements in the periodic table. Its members are chromium (Cr), molybdenum (Mo), tungsten (W), and seaborgium (Sg). These are all transition metals and chromium, molybdenum and tungsten are refractory metals. The period 8 elements of group 6 are likely to be either unpenthexium (Uph) or unpentoctium (Upo). This may not be possible; drip instability may imply that the periodic table ends around unbihexium. Neither unpenthexium nor unpentoctium have been synthesized, and it is unlikely that this will happen in the near future.

Sintered compact, cutting tool formed using sintered compact, and method for manufacturing sintered compact

A sintered compact contains cubic sialon, β-sialon, and at least one of a first component and a second component. The first component is at least one element selected from the group consisting of iron, cobalt, nickel, and group 4 elements, group 5 elements, and group 6 elements of the periodic table. The second component is at least one compound containing at least one element selected from the group consisting of group 4 elements, group 5 elements, and group 6 elements and at least one element selected from the group consisting of carbon, nitrogen, and boron.
Owner:SUMITOMO ELECTRIC IND LTD

Positive electrode active material

The present invention provides a positive electrode active material. The positive electrode active material is represented by the following formula (I) and has a BET specific surface area of larger than 5 m2 / g and not larger than 15 m2 / g:LixM1yM31-yO2  (I)wherein M1 is at least one transition metal element selected from Group 5 elements and Group 6 elements of the Periodic Table, M3 is at least one transition metal element other than M1 and selected from among transition metal elements excluding Fe, x is not less than 0.9 and not more than 1.3, and y is more than 0 and less than 1.
Owner:SUMITOMO CHEM CO LTD

Positive electrode current collector for lithium ion secondary battery, positive electrode for lithium ion secondary battery, and process for production of positive electrode current collector for lithium ion secondary battery

Disclosed is a positive electrode current collector for a lithium ion secondary battery, which is characterized by comprising an aluminum foil comprising pure aluminum or an aluminum alloy and a surface layer formed on one surface or both surfaces of the aluminum foil, wherein the surface layer contains C in an amount of 10 to 95 at.% and additionally contains at least one element selected from Group 4 to Group 6 elements in an amount of 5 to 90 at.%. Also disclosed is a positive electrode for a lithium ion secondary battery, which is characterized by having a positive electrode active material layer that covers the surface layer of the positive electrode current collector for a lithium ion secondary battery. It becomes possible to prevent the elution of the current collector into an electrolytic solution to improve the adhesion between the current collector and the active material in the interface therebetween and increase the service life of a battery.
Owner:KOBE STEEL LTD

Storage device and storage unit

There are provided a storage device and a storage unit capable of improving retention performance of an intermediate resistance value in writing at a low current, and a storage device and a storage unit capable of reducing random telegraph noise. A storage device of one embodiment of the present technology includes a first electrode, a storage layer, and a second electrode in this order, and the storage layer includes: an ion source layer including one or more kinds of chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se), and one or more kinds of transition metal elements selected from Group 4 elements, Group 5 elements, and Group 6 elements of the periodic table; and a resistance change layer including boron (B) and oxygen (O). A storage device of another embodiment of the present technology includes the above-described ion source layer and a resistance change layer including one or more kinds of transaction metal elements selected from Group 4 elements, Group 5 elements, and Group 6 elements of the periodic table, and oxygen (O).
Owner:SONY SEMICON SOLUTIONS CORP

Coating liquid for forming n-type oxide semiconductor film, method for producing n-type oxide semiconductor film, and method for producing field-effect transistor

A coating liquid for forming an n-type oxide semiconductor film, the coating liquid including: a Group A element, which is at least one selected from the group consisting of Sc, Y, Ln, B, Al, and Ga; a Group B element, which is at least one of In and Tl; a Group C element, which is at least one selected from the group consisting of Group 4 elements, Group 5 elements, Group 6 elements, Group 7 elements, Group 8 elements, Group 9 elements, Group 10 elements, Group 14 elements, Group 15 elements, and Group 16 elements; and a solvent.
Owner:RICOH KK
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