The invention relates to a method for implementing aluminum
diffusion on a
silicon wafer. The method includes making a texture surface on the front surface of the
silicon wafer, and
coating a
silicon oxide isolating membrane on the back surface of the silicon
wafer; implanting ions, in other words, selecting
solid AlCl<3> as an aluminum
diffusion source, heating the
solid aluminum source under a high-vacuum condition so that the
solid aluminum source sublimates at the temperature of 120-170 DEG C, loading the solid aluminum source into a source region of a filament of an
ion implanter by using
argon as a carrier, enabling the solid aluminum source to be collided with electrons generated by the filament to form the charged aluminum ions, accelerating the charged aluminum ions by
high voltage, screening the ions by a magnetic analyzer, and further
doping aluminum impurities into the silicon wafer; cleaning the silicon wafer; dehydrating the cleaned silicon wafer by
anhydrous ethanol and placing the silicon wafer in a
drying oven at the temperature of 100-110 DEG C to dry the silicon wafer; and placing the dried silicon wafer in a
diffusion furnace, heating the diffusion furnace so that the temperature of the diffusion furnace is 1250-1260 DEG C, and keeping the temperature constant for 10-12 hours. The method has the advantages that the total
doping contents for
ion implantation are accurately controlled, the precision and the
repeatability of a diffusion process are improved, and a large-area uniform
doping effect is realized.